AU534002B2 – Amorphous semiconductor solar cell
– Google Patents
AU534002B2 – Amorphous semiconductor solar cell
– Google Patents
Amorphous semiconductor solar cell
Info
Publication number
AU534002B2
AU534002B2
AU88507/82A
AU8850782A
AU534002B2
AU 534002 B2
AU534002 B2
AU 534002B2
AU 88507/82 A
AU88507/82 A
AU 88507/82A
AU 8850782 A
AU8850782 A
AU 8850782A
AU 534002 B2
AU534002 B2
AU 534002B2
Authority
AU
Australia
Prior art keywords
solar cell
amorphous semiconductor
semiconductor solar
amorphous
cell
Prior art date
1981-10-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU88507/82A
Other versions
AU8850782A
(en
Inventor
Yutaka Hayashi
Mitsuyuki Yamanaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kogyo Gijutsuin And Taiyo Yuden KK
Original Assignee
Agency of Industrial Science and Technology
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1981-10-01
Filing date
1982-09-17
Publication date
1983-12-22
1982-09-17
Application filed by Agency of Industrial Science and Technology, Taiyo Yuden Co Ltd
filed
Critical
Agency of Industrial Science and Technology
1983-05-05
Publication of AU8850782A
publication
Critical
patent/AU8850782A/en
1983-12-22
Application granted
granted
Critical
1983-12-22
Publication of AU534002B2
publication
Critical
patent/AU534002B2/en
2002-09-17
Anticipated expiration
legal-status
Critical
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/02—Details
H01L31/0224—Electrodes
H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/02—Details
H01L31/0224—Electrodes
H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/02—Details
H01L31/0224—Electrodes
H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/00—Energy generation through renewable energy sources
Y02E10/50—Photovoltaic [PV] energy
AU88507/82A
1981-10-01
1982-09-17
Amorphous semiconductor solar cell
Expired
AU534002B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
JP56154749A
JPS5857756A
(en)
1981-10-01
1981-10-01
Amorphous silicon solar battery
JP15474981
1981-10-01
Publications (2)
Publication Number
Publication Date
AU8850782A
AU8850782A
(en)
1983-05-05
AU534002B2
true
AU534002B2
(en)
1983-12-22
Family
ID=15591066
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU88507/82A
Expired
AU534002B2
(en)
1981-10-01
1982-09-17
Amorphous semiconductor solar cell
Country Status (5)
Country
Link
US
(1)
US4500743A
(en)
JP
(1)
JPS5857756A
(en)
AU
(1)
AU534002B2
(en)
FR
(1)
FR2514201A1
(en)
GB
(1)
GB2113002B
(en)
Families Citing this family (43)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4532537A
(en)
*
1982-09-27
1985-07-30
Rca Corporation
Photodetector with enhanced light absorption
US4663188A
(en)
*
1982-09-27
1987-05-05
Rca Corporation
Method for making a photodetector with enhanced light absorption
JPS59201471A
(en)
*
1983-04-29
1984-11-15
Semiconductor Energy Lab Co Ltd
Photoelectric conversion semiconductor device
JPS59103384A
(en)
*
1982-12-04
1984-06-14
Hoya Corp
Transparent conductive film for solar battery
JPS59159574A
(en)
*
1983-03-02
1984-09-10
Komatsu Denshi Kinzoku Kk
Amorphous solar battery
JPH06105794B2
(en)
*
1983-10-18
1994-12-21
株式会社半導体エネルギー研究所
Method for manufacturing silicon carbide semiconductor
US4599482A
(en)
*
1983-03-07
1986-07-08
Semiconductor Energy Lab. Co., Ltd.
Semiconductor photoelectric conversion device and method of making the same
JPS59161881A
(en)
*
1983-03-07
1984-09-12
Semiconductor Energy Lab Co Ltd
Manufacture of photoelectric conversion device
JPS59201470A
(en)
*
1983-04-08
1984-11-15
Taiyo Yuden Co Ltd
Amorphous silicon solar battery
JPH06101571B2
(en)
*
1983-06-03
1994-12-12
株式会社半導体エネルギー研究所
Semiconductor device
JPS6010788A
(en)
*
1983-06-30
1985-01-19
Kanegafuchi Chem Ind Co Ltd
Substrate for solar cell
JPS6034076A
(en)
*
1983-08-05
1985-02-21
Taiyo Yuden Co Ltd
Amorphous silicon solar cell
JPS6068663A
(en)
*
1983-09-26
1985-04-19
Komatsu Denshi Kinzoku Kk
Amorphous silicon solar battery
JPS60170269A
(en)
*
1984-02-14
1985-09-03
Fuji Electric Corp Res & Dev Ltd
Manufacture of thin-film solar cell
JPH0731500B2
(en)
*
1984-02-25
1995-04-10
カシオ計算機株式会社
Musical sound waveform generator
JPS60240166A
(en)
*
1984-05-14
1985-11-29
Taiyo Yuden Co Ltd
Amorphous silicon solar battery and manufacture thereof
JPS6193672A
(en)
*
1984-10-12
1986-05-12
Sanyo Electric Co Ltd
Photovoltaic device
JPS61116534A
(en)
*
1984-10-19
1986-06-04
工業技術院長
Beam low-reflection transparent conductive film and manufacture thereof
JPS61222282A
(en)
*
1985-03-28
1986-10-02
Nippon Sheet Glass Co Ltd
Amorphous silicon solar battery
JPS6268253U
(en)
*
1985-10-19
1987-04-28
JPH0784651B2
(en)
*
1986-06-20
1995-09-13
ティーディーケイ株式会社
Transparent conductive film and method for manufacturing the same
US4728581A
(en)
*
1986-10-14
1988-03-01
Rca Corporation
Electroluminescent device and a method of making same
US4808462A
(en)
*
1987-05-22
1989-02-28
Glasstech Solar, Inc.
Solar cell substrate
US5102721A
(en)
*
1987-08-31
1992-04-07
Solarex Corporation
Textured tin oxide
JPH01225373A
(en)
*
1988-03-04
1989-09-08
Nippon Sheet Glass Co Ltd
Solar cell substrate
FR2631330A1
(en)
*
1988-05-10
1989-11-17
Saint Gobain Vitrage
Glass with a transparent conductive layer for photopile in the form of a thin layer and process for obtaining it
DE68927845T2
(en)
*
1988-09-30
1997-08-07
Kanegafuchi Chemical Ind
Solar cell with a transparent electrode
US5078803A
(en)
*
1989-09-22
1992-01-07
Siemens Solar Industries L.P.
Solar cells incorporating transparent electrodes comprising hazy zinc oxide
JP2726323B2
(en)
*
1990-02-01
1998-03-11
キヤノン株式会社
Thin-film solar cell fabrication method
JPH06140650A
(en)
*
1992-09-14
1994-05-20
Sanyo Electric Co Ltd
Method of reforming light-transmitting conductive oxide film and manufacture of photosensor using the film
JP3431776B2
(en)
*
1995-11-13
2003-07-28
シャープ株式会社
Manufacturing method of solar cell substrate and solar cell substrate processing apparatus
JPH10117006A
(en)
*
1996-08-23
1998-05-06
Kanegafuchi Chem Ind Co Ltd
Thin-film photoelectric conversion device
KR100446591B1
(en)
*
1997-02-17
2005-05-16
삼성전자주식회사
Silicon thin layer for solar cell and manufacturing method thereof
JP2001060702A
(en)
*
1999-06-18
2001-03-06
Nippon Sheet Glass Co Ltd
Substrate for photoelectric transfer device and photoelectric transfer device using substrate
JP2002260448A
(en)
*
2000-11-21
2002-09-13
Nippon Sheet Glass Co Ltd
Conductive film, method of making the same, substrate and photoelectric conversion device equipped with the same
JP4229606B2
(en)
*
2000-11-21
2009-02-25
日本板硝子株式会社
Base for photoelectric conversion device and photoelectric conversion device including the same
JP2003347572A
(en)
*
2002-01-28
2003-12-05
Kanegafuchi Chem Ind Co Ltd
Tandem type thin film photoelectric converter and method of manufacturing the same
DE10326957B4
(en)
*
2003-06-11
2006-08-10
Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V.
Doped semiconductor oxide fine powders and process for their preparation
WO2010084758A1
(en)
2009-01-23
2010-07-29
株式会社アルバック
Method for manufacturing solar cell, and solar cell
US20110126890A1
(en)
*
2009-11-30
2011-06-02
Nicholas Francis Borrelli
Textured superstrates for photovoltaics
US20110209752A1
(en)
*
2010-02-26
2011-09-01
Glenn Eric Kohnke
Microstructured glass substrates
US8663732B2
(en)
*
2010-02-26
2014-03-04
Corsam Technologies Llc
Light scattering inorganic substrates using monolayers
JP5541980B2
(en)
*
2010-06-24
2014-07-09
株式会社カネカ
Crystalline silicon solar cell and manufacturing method thereof
Family Cites Families (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
BE788191A
(en)
*
1971-08-31
1973-02-28
Cassella Farbwerke Mainkur Ag
POLYACRYLAMIDE GRANULE
JPS5323287A
(en)
*
1976-08-16
1978-03-03
Hiroyuki Sakaki
Photoelectric converting element
JPS5473587A
(en)
*
1977-11-24
1979-06-12
Sharp Corp
Thin film solar battery device
US4217148A
(en)
*
1979-06-18
1980-08-12
Rca Corporation
Compensated amorphous silicon solar cell
JPS57107080A
(en)
*
1980-12-25
1982-07-03
Sumitomo Electric Ind Ltd
Amorphous thin film solar cell
JPS57166083A
(en)
*
1981-04-07
1982-10-13
Ricoh Co Ltd
Thin film type photoelectric conversion element
1981
1981-10-01
JP
JP56154749A
patent/JPS5857756A/en
active
Granted
1982
1982-09-17
AU
AU88507/82A
patent/AU534002B2/en
not_active
Expired
1982-09-23
FR
FR8216039A
patent/FR2514201A1/en
active
Granted
1982-09-30
US
US06/428,712
patent/US4500743A/en
not_active
Expired – Lifetime
1982-09-30
GB
GB08228022A
patent/GB2113002B/en
not_active
Expired
Also Published As
Publication number
Publication date
JPS627716B2
(en)
1987-02-18
US4500743A
(en)
1985-02-19
AU8850782A
(en)
1983-05-05
FR2514201B1
(en)
1984-03-30
GB2113002B
(en)
1985-03-13
GB2113002A
(en)
1983-07-27
FR2514201A1
(en)
1983-04-08
JPS5857756A
(en)
1983-04-06
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Legal Events
Date
Code
Title
Description
2003-04-17
MK14
Patent ceased section 143(a) (annual fees not paid) or expired
