AU534922B2 – Pulling monocrystalline silicon rods from a melt
– Google Patents
AU534922B2 – Pulling monocrystalline silicon rods from a melt
– Google Patents
Pulling monocrystalline silicon rods from a melt
Info
Publication number
AU534922B2
AU534922B2
AU59589/80A
AU5958980A
AU534922B2
AU 534922 B2
AU534922 B2
AU 534922B2
AU 59589/80 A
AU59589/80 A
AU 59589/80A
AU 5958980 A
AU5958980 A
AU 5958980A
AU 534922 B2
AU534922 B2
AU 534922B2
Authority
AU
Australia
Prior art keywords
melt
monocrystalline silicon
silicon rods
pulling monocrystalline
pulling
Prior art date
1979-06-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU59589/80A
Other versions
AU5958980A
(en
Inventor
Dieter Helmreich
Erhard Sirtl
Theo Zollner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heliotronic Forschungs-Und Entwicklungs-Gesellschaft fur Solarzellen-Grundstoffe Mbh
Original Assignee
Heliotronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1979-06-26
Filing date
1980-06-25
Publication date
1984-02-23
1980-06-25
Application filed by Heliotronic GmbH
filed
Critical
Heliotronic GmbH
1981-01-08
Publication of AU5958980A
publication
Critical
patent/AU5958980A/en
1984-02-23
Application granted
granted
Critical
1984-02-23
Publication of AU534922B2
publication
Critical
patent/AU534922B2/en
2000-06-25
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/02—Elements
C30B29/06—Silicon
C—CHEMISTRY; METALLURGY
C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
C30B11/10—Solid or liquid components, e.g. Verneuil method
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
AU59589/80A
1979-06-26
1980-06-25
Pulling monocrystalline silicon rods from a melt
Ceased
AU534922B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
DE19792925679
DE2925679A1
(en)
1979-06-26
1979-06-26
METHOD FOR PRODUCING SILICON RODS
DE29256799
1979-06-26
Publications (2)
Publication Number
Publication Date
AU5958980A
AU5958980A
(en)
1981-01-08
AU534922B2
true
AU534922B2
(en)
1984-02-23
Family
ID=6074159
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU59589/80A
Ceased
AU534922B2
(en)
1979-06-26
1980-06-25
Pulling monocrystalline silicon rods from a melt
Country Status (6)
Country
Link
US
(1)
US4312700A
(en)
EP
(1)
EP0021385B1
(en)
JP
(1)
JPS5819639B2
(en)
AU
(1)
AU534922B2
(en)
CA
(1)
CA1155735A
(en)
DE
(2)
DE2925679A1
(en)
Families Citing this family (32)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL8005312A
(en)
*
1980-09-24
1982-04-16
Philips Nv
METHOD FOR MANUFACTURING FERRITE SINGLE CRYSTALS
US4400232A
(en)
*
1981-11-09
1983-08-23
Eagle-Picher Industries, Inc.
Control of oxygen- and carbon-related crystal defects in silicon processing
CA1222436A
(en)
*
1982-08-23
1987-06-02
Franz T. Geyling
Process for growing crystalline material
US4597948A
(en)
*
1982-12-27
1986-07-01
Sri International
Apparatus for obtaining silicon from fluosilicic acid
US4442082A
(en)
*
1982-12-27
1984-04-10
Sri International
Process for obtaining silicon from fluosilicic acid
DE3427465A1
(en)
*
1984-07-25
1986-01-30
Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen
METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF SILICONE MOLDED BODIES
IT1178785B
(en)
*
1984-12-21
1987-09-16
Pragma Spa
PROCEDURE FOR THE PREPARATION OF POLYCRYSTALLINE MATERIALS AND EQUIPMENT SUITABLE FOR ITS REALIZATION
US4593910A
(en)
*
1985-03-07
1986-06-10
Commonwealth Of Puerto Rico
Board game
DE3531610A1
(en)
*
1985-09-04
1987-03-05
Wacker Chemitronic
METHOD AND DEVICE FOR PRODUCING SILICON RODS
JPH0753569B2
(en)
*
1986-08-07
1995-06-07
昭和アルミニウム株式会社
Silicon purification method
US4921026A
(en)
*
1988-06-01
1990-05-01
Union Carbide Chemicals And Plastics Company Inc.
Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
DE3907916A1
(en)
*
1989-03-11
1990-09-13
Bayer Ag
DEVICE FOR DOSING SILICONE MELT
US5135047A
(en)
*
1989-10-05
1992-08-04
Flavio Dobran
Furnace for high quality and superconducting bulk crystal growths
JP2516823B2
(en)
*
1990-02-28
1996-07-24
信越半導体株式会社
Rod-shaped polycrystalline silicon for producing single crystal silicon by floating zone melting method and method for producing the same
US5016683A
(en)
*
1990-03-27
1991-05-21
General Signal Corporation
Apparatus for controllably feeding a particulate material
DE4018967A1
(en)
*
1990-06-13
1991-12-19
Wacker Chemitronic
Polycrystalline silicon blocks with column crystallised structure
DE4323793A1
(en)
*
1993-07-15
1995-01-19
Wacker Chemitronic
Process for the production of rods or blocks from semiconductor material which expands on solidification by crystallizing a melt produced from granules, and device for carrying it out
DE19607098C2
(en)
*
1996-02-24
1999-06-17
Ald Vacuum Techn Gmbh
Method and device for the directional solidification of a silicon melt into a block in a bottomless metallic cold wall crucible
US6313398B1
(en)
*
1999-06-24
2001-11-06
Shin-Etsu Chemical Co., Ltd.
Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
DE10021585C1
(en)
*
2000-05-04
2002-02-28
Ald Vacuum Techn Ag
Method and device for melting and solidifying metals and semi-metals in a mold
KR100370610B1
(en)
*
2000-09-22
2003-01-30
성실전자 주식회사
High voltage discharge resistor and manufacturing method thereof
US8021483B2
(en)
*
2002-02-20
2011-09-20
Hemlock Semiconductor Corporation
Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
NO318092B1
(en)
*
2002-05-22
2005-01-31
Elkem Materials
Calcium-silicate-based slag, process for the preparation of calcium-silicate-based slag, and application for slag treatment of molten silicon
WO2004030044A2
(en)
*
2002-09-27
2004-04-08
Astropower, Inc.
Methods and systems for purifying elements
JP3855082B2
(en)
*
2002-10-07
2006-12-06
国立大学法人東京農工大学
Method for producing polycrystalline silicon, polycrystalline silicon, and solar cell
NO322246B1
(en)
*
2004-12-27
2006-09-04
Elkem Solar As
Process for preparing directed solidified silicon ingots
US8968467B2
(en)
*
2007-06-27
2015-03-03
Silicor Materials Inc.
Method and system for controlling resistivity in ingots made of compensated feedstock silicon
DE102009021003A1
(en)
*
2009-05-12
2010-11-18
Centrotherm Sitec Gmbh
Process and apparatus for providing liquid silicon
US9580327B2
(en)
*
2014-02-11
2017-02-28
Rec Silicon Inc
Method and apparatus for consolidation of granular silicon and measuring non-metals content
US20160230307A1
(en)
*
2015-02-05
2016-08-11
Solarworld Industries America Inc.
Apparatus and methods for producing silicon-ingots
EP3156389A1
(en)
2015-10-12
2017-04-19
GFBiochemicals Ltd
Process for the purification of levulinic acid
JP6535928B2
(en)
*
2016-05-16
2019-07-03
三菱造船株式会社
Liquefied gas quenchability determination device, liquefied gas storage tank, liquefied gas carrier, and quenchability determination method by liquefied gas
Family Cites Families (9)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2475810A
(en)
*
1944-01-05
1949-07-12
Bell Telephone Labor Inc
Preparation of silicon material
GB954849A
(en)
*
1961-08-04
1964-04-08
Ici Ltd
Production of silicon
US3267529A
(en)
*
1961-10-04
1966-08-23
Heraeus Gmbh W C
Apparatus for melting metals under high vacuum
BE759122A
(en)
*
1969-11-19
1971-05-18
Union Carbide Corp
PROCESS AND CHARGE FOR THE PRODUCTION OF SILICON IN AN ELECTRIC ARC OVEN BY CARBOTHERMAL REDUCTION OF SILICA
US3745043A
(en)
*
1971-05-13
1973-07-10
Union Carbide Corp
Manufacture of silicon metal from dichlorosilane
US3759310A
(en)
*
1971-08-30
1973-09-18
United Aircraft Corp
Nsumable electrode method and apparatus for providing single crystal castings using a co
DE2722784A1
(en)
*
1977-05-20
1978-11-30
Wacker Chemitronic
PROCEDURE FOR CLEANING UP SOLIDS
DE2745247C3
(en)
*
1977-10-07
1980-03-13
Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen
Process and device for the semi-continuous production of silicon moldings
DE2845459A1
(en)
*
1978-10-19
1980-04-30
Consortium Elektrochem Ind
METHOD FOR PROTECTING CARBON BODIES
1979
1979-06-26
DE
DE19792925679
patent/DE2925679A1/en
not_active
Withdrawn
1980
1980-06-03
JP
JP55073826A
patent/JPS5819639B2/en
not_active
Expired
1980-06-09
US
US06/157,707
patent/US4312700A/en
not_active
Expired – Lifetime
1980-06-11
CA
CA000353782A
patent/CA1155735A/en
not_active
Expired
1980-06-23
DE
DE8080103506T
patent/DE3063462D1/en
not_active
Expired
1980-06-23
EP
EP80103506A
patent/EP0021385B1/en
not_active
Expired
1980-06-25
AU
AU59589/80A
patent/AU534922B2/en
not_active
Ceased
Also Published As
Publication number
Publication date
JPS565399A
(en)
1981-01-20
EP0021385B1
(en)
1983-05-25
DE3063462D1
(en)
1983-07-07
US4312700A
(en)
1982-01-26
AU5958980A
(en)
1981-01-08
DE2925679A1
(en)
1981-01-22
CA1155735A
(en)
1983-10-25
JPS5819639B2
(en)
1983-04-19
EP0021385A1
(en)
1981-01-07
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