AU5474286A - Creación de Inventos y Patentes con Inteligencia Artificial

AU5474286A – Compound semiconductor device
– Google Patents

AU5474286A – Compound semiconductor device
– Google Patents
Compound semiconductor device

Info

Publication number
AU5474286A

AU5474286A
AU54742/86A
AU5474286A
AU5474286A
AU 5474286 A
AU5474286 A
AU 5474286A
AU 54742/86 A
AU54742/86 A
AU 54742/86A
AU 5474286 A
AU5474286 A
AU 5474286A
AU 5474286 A
AU5474286 A
AU 5474286A
Authority
AU
Australia
Prior art keywords
semiconductor device
compound semiconductor
compound
semiconductor
Prior art date
1985-03-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
AU54742/86A
Other versions

AU577934B2
(en

Inventor
Yuichi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1985-03-15
Filing date
1986-03-14
Publication date
1986-09-18

1985-03-15
Priority claimed from JP5202185A
external-priority
patent/JPS61210675A/en

1985-03-15
Priority claimed from JP5202385A
external-priority
patent/JPS61210677A/en

1985-03-15
Priority claimed from JP5202485A
external-priority
patent/JPS61210678A/en

1985-03-15
Priority claimed from JP5202285A
external-priority
patent/JPS61210676A/en

1985-05-31
Priority claimed from JP11932885A
external-priority
patent/JPS61278168A/en

1986-03-14
Application filed by Sumitomo Electric Industries Ltd
filed
Critical
Sumitomo Electric Industries Ltd

1986-09-18
Publication of AU5474286A
publication
Critical
patent/AU5474286A/en

1988-10-06
Application granted
granted
Critical

1988-10-06
Publication of AU577934B2
publication
Critical
patent/AU577934B2/en

2006-03-14
Anticipated expiration
legal-status
Critical

Status
Ceased
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L29/1025—Channel region of field-effect devices

H01L29/1029—Channel region of field-effect devices of field-effect transistors

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices

H01L29/151—Compositional structures

H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation

H01L29/155—Comprising only semiconductor materials

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys

H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

AU54742/86A
1985-03-15
1986-03-14
Compound semiconductor device

Ceased

AU577934B2
(en)

Applications Claiming Priority (10)

Application Number
Priority Date
Filing Date
Title

JP60-52023

1985-03-15

JP5202185A

JPS61210675A
(en)

1985-03-15
1985-03-15
Compound semiconductor device

JP60-52022

1985-03-15

JP5202385A

JPS61210677A
(en)

1985-03-15
1985-03-15
Compound semiconductor device

JP60-52021

1985-03-15

JP5202485A

JPS61210678A
(en)

1985-03-15
1985-03-15
Compound semiconductor device

JP60-52024

1985-03-15

JP5202285A

JPS61210676A
(en)

1985-03-15
1985-03-15
Compound semiconductor device

JP60-119328

1985-05-31

JP11932885A

JPS61278168A
(en)

1985-05-31
1985-05-31
Compound semiconductor device

Publications (2)

Publication Number
Publication Date

AU5474286A
true

AU5474286A
(en)

1986-09-18

AU577934B2

AU577934B2
(en)

1988-10-06

Family
ID=27522983
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU54742/86A
Ceased

AU577934B2
(en)

1985-03-15
1986-03-14
Compound semiconductor device

Country Status (5)

Country
Link

EP
(1)

EP0196517B1
(en)

KR
(1)

KR860007745A
(en)

AU
(1)

AU577934B2
(en)

CA
(1)

CA1256590A
(en)

DE
(1)

DE3672360D1
(en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

JPH0783108B2
(en)

1986-07-25
1995-09-06
株式会社日立製作所

Semiconductor device

US4812886A
(en)

1987-02-09
1989-03-14
International Business Machines Corporation
Multilayer contact apparatus and method

DE69223706T2
(en)

1991-03-28
1998-08-20
Asahi Chemical Ind

FIELD EFFECT TRANSISTOR

US6150680A
(en)

1998-03-05
2000-11-21
Welch Allyn, Inc.
Field effect semiconductor device having dipole barrier

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE1614574A1
(en)

1967-08-04
1970-10-29
Siemens Ag

Semiconductor component, in particular a semiconductor component with a pn junction

BE793800A
(en)

1972-01-10
1973-05-02
Rca Corp

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS

US4032951A
(en)

1976-04-13
1977-06-28
Bell Telephone Laboratories, Incorporated
Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

US4136350A
(en)

1977-07-14
1979-01-23
Bell Telephone Laboratories, Incorporated
Epitaxial growth of dissimilar materials

1986

1986-03-13
CA
CA000504069A
patent/CA1256590A/en
not_active
Expired

1986-03-14
DE
DE8686103425T
patent/DE3672360D1/en
not_active
Expired – Fee Related

1986-03-14
AU
AU54742/86A
patent/AU577934B2/en
not_active
Ceased

1986-03-14
EP
EP86103425A
patent/EP0196517B1/en
not_active
Expired – Lifetime

1986-03-15
KR
KR1019860001897A
patent/KR860007745A/en
not_active
IP Right Cessation

Also Published As

Publication number
Publication date

EP0196517B1
(en)

1990-07-04

EP0196517A1
(en)

1986-10-08

CA1256590A
(en)

1989-06-27

DE3672360D1
(en)

1990-08-09

KR860007745A
(en)

1986-10-17

AU577934B2
(en)

1988-10-06

Información de contacto