AU5884686A – Submicron mask openings using sidewall and lift-off techniques
– Google Patents
AU5884686A – Submicron mask openings using sidewall and lift-off techniques
– Google Patents
Submicron mask openings using sidewall and lift-off techniques
Info
Publication number
AU5884686A
AU5884686A
AU58846/86A
AU5884686A
AU5884686A
AU 5884686 A
AU5884686 A
AU 5884686A
AU 58846/86 A
AU58846/86 A
AU 58846/86A
AU 5884686 A
AU5884686 A
AU 5884686A
AU 5884686 A
AU5884686 A
AU 5884686A
Authority
AU
Australia
Prior art keywords
sidewall
lift
techniques
mask openings
submicron
Prior art date
1985-11-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU58846/86A
Other versions
AU576086B2
(en
Inventor
Robert Kimbal Cook
Joseph Francis Shepard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1985-11-18
Filing date
1986-06-13
Publication date
1987-05-21
1986-06-13
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1987-05-21
Publication of AU5884686A
publication
Critical
patent/AU5884686A/en
1988-08-11
Application granted
granted
Critical
1988-08-11
Publication of AU576086B2
publication
Critical
patent/AU576086B2/en
2006-06-13
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/942—Masking
Y10S438/945—Special, e.g. metal
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/942—Masking
Y10S438/947—Subphotolithographic processing
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/942—Masking
Y10S438/948—Radiation resist
Y10S438/951—Lift-off
AU58846/86A
1985-11-18
1986-06-13
Submicron mask openings using sidewall and lift-off techniques
Ceased
AU576086B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US06/799,053
US4654119A
(en)
1985-11-18
1985-11-18
Method for making submicron mask openings using sidewall and lift-off techniques
US799053
2004-03-12
Publications (2)
Publication Number
Publication Date
AU5884686A
true
AU5884686A
(en)
1987-05-21
AU576086B2
AU576086B2
(en)
1988-08-11
Family
ID=25174932
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU58846/86A
Ceased
AU576086B2
(en)
1985-11-18
1986-06-13
Submicron mask openings using sidewall and lift-off techniques
Country Status (8)
Country
Link
US
(1)
US4654119A
(en)
EP
(1)
EP0223032A3
(en)
JP
(1)
JPS62126637A
(en)
CN
(1)
CN86107855B
(en)
AU
(1)
AU576086B2
(en)
BR
(1)
BR8605249A
(en)
CA
(1)
CA1227456A
(en)
IN
(1)
IN168426B
(en)
Families Citing this family (12)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4842633A
(en)
*
1987-08-25
1989-06-27
Matsushita Electric Industrial Co., Ltd.
Method of manufacturing molds for molding optical glass elements and diffraction gratings
DE3888184D1
(en)
*
1988-11-17
1994-04-07
Ibm
Process for the production of masks with structures in the submicrometer range.
US5858256A
(en)
*
1996-07-11
1999-01-12
The Board Of Trustees Of The Leland Stanford, Jr. University
Method of forming small aperture
US5956583A
(en)
*
1997-06-30
1999-09-21
Fuller; Robert T.
Method for forming complementary wells and self-aligned trench with a single mask
US20060191863A1
(en)
*
2005-02-25
2006-08-31
Benjamin Szu-Min Lin
Method for fabricating etch mask and patterning process using the same
KR101291766B1
(en)
2007-06-07
2013-08-01
도쿄엘렉트론가부시키가이샤
Patterning method
JP2009094125A
(en)
*
2007-10-04
2009-04-30
Elpida Memory Inc
Method of manufacturing semiconductor device
JP2013004669A
(en)
*
2011-06-15
2013-01-07
Toshiba Corp
Pattern formation method, electronic device manufacturing method and electronic device
CN105226002B
(en)
*
2014-07-04
2019-05-21
北大方正集团有限公司
Autoregistration slot type power device and its manufacturing method
US10720670B2
(en)
2018-02-08
2020-07-21
International Business Machines Corporation
Self-aligned 3D solid state thin film battery
US10679853B2
(en)
2018-02-08
2020-06-09
International Business Machines Corporation
Self-aligned, over etched hard mask fabrication method and structure
US11056722B2
(en)
2018-02-08
2021-07-06
International Business Machines Corporation
Tool and method of fabricating a self-aligned solid state thin film battery
Family Cites Families (11)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3982943A
(en)
*
1974-03-05
1976-09-28
Ibm Corporation
Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
US4209349A
(en)
*
1978-11-03
1980-06-24
International Business Machines Corporation
Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4274909A
(en)
*
1980-03-17
1981-06-23
International Business Machines Corporation
Method for forming ultra fine deep dielectric isolation
JPS57130431A
(en)
*
1981-02-06
1982-08-12
Fujitsu Ltd
Manufacture of semiconductor device
US4387145A
(en)
*
1981-09-28
1983-06-07
Fairchild Camera & Instrument Corp.
Lift-off shadow mask
US4430791A
(en)
*
1981-12-30
1984-02-14
International Business Machines Corporation
Sub-micrometer channel length field effect transistor process
JPS5870534A
(en)
*
1982-09-27
1983-04-27
フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン
Method of forming lift-off shadow mask
DE3242113A1
(en)
*
1982-11-13
1984-05-24
Ibm Deutschland Gmbh, 7000 Stuttgart
METHOD FOR PRODUCING A THIN DIELECTRIC INSULATION IN A SILICON SEMICONDUCTOR BODY
US4572765A
(en)
*
1983-05-02
1986-02-25
Fairchild Camera & Instrument Corporation
Method of fabricating integrated circuit structures using replica patterning
KR890003903B1
(en)
*
1983-06-29
1989-10-10
가부시끼가이샤 히다찌세이사꾸쇼
Pattern forming method
US4575924A
(en)
*
1984-07-02
1986-03-18
Texas Instruments Incorporated
Process for fabricating quantum-well devices utilizing etch and refill techniques
1985
1985-11-18
US
US06/799,053
patent/US4654119A/en
not_active
Expired – Fee Related
1986
1986-05-22
CA
CA000509770A
patent/CA1227456A/en
not_active
Expired
1986-06-13
AU
AU58846/86A
patent/AU576086B2/en
not_active
Ceased
1986-10-03
EP
EP86113666A
patent/EP0223032A3/en
not_active
Ceased
1986-10-15
JP
JP61243327A
patent/JPS62126637A/en
active
Granted
1986-10-28
BR
BR8605249A
patent/BR8605249A/en
not_active
IP Right Cessation
1986-11-14
CN
CN86107855A
patent/CN86107855B/en
not_active
Expired
1986-12-03
IN
IN937/MAS/86A
patent/IN168426B/en
unknown
Also Published As
Publication number
Publication date
CN86107855B
(en)
1988-06-29
JPH0543287B2
(en)
1993-07-01
BR8605249A
(en)
1987-07-28
EP0223032A3
(en)
1990-06-27
AU576086B2
(en)
1988-08-11
CA1227456A
(en)
1987-09-29
US4654119A
(en)
1987-03-31
JPS62126637A
(en)
1987-06-08
EP0223032A2
(en)
1987-05-27
CN86107855A
(en)
1987-08-19
IN168426B
(en)
1991-03-30
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