AU6307186A – A dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
– Google Patents
AU6307186A – A dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
– Google Patents
A dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
Info
Publication number
AU6307186A
AU6307186A
AU63071/86A
AU6307186A
AU6307186A
AU 6307186 A
AU6307186 A
AU 6307186A
AU 63071/86 A
AU63071/86 A
AU 63071/86A
AU 6307186 A
AU6307186 A
AU 6307186A
AU 6307186 A
AU6307186 A
AU 6307186A
Authority
AU
Australia
Prior art keywords
memory device
method therefor
fabrication method
dynamic memory
capacitor structure
Prior art date
1985-10-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU63071/86A
Other versions
AU575499B2
(en
Inventor
Nicky Chau-Chun Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1985-10-21
Filing date
1986-09-23
Publication date
1987-04-30
1986-09-23
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1987-04-30
Publication of AU6307186A
publication
Critical
patent/AU6307186A/en
1988-07-28
Application granted
granted
Critical
1988-07-28
Publication of AU575499B2
publication
Critical
patent/AU575499B2/en
2006-09-23
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B12/00—Dynamic random access memory [DRAM] devices
H10B12/01—Manufacture or treatment
H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
H10B12/03—Making the capacitor or connections thereto
H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
H01L21/743—Making of internal connections, substrate contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
H01L21/8221—Three dimensional integrated circuits stacked in different levels
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B12/00—Dynamic random access memory [DRAM] devices
H10B12/30—DRAM devices comprising one-transistor – one-capacitor [1T-1C] memory cells
H10B12/37—DRAM devices comprising one-transistor – one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
H10B12/373—DRAM devices comprising one-transistor – one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
AU63071/86A
1985-10-21
1986-09-23
A dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
Ceased
AU575499B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US789675
1985-10-21
US06/789,675
US4649625A
(en)
1985-10-21
1985-10-21
Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
Publications (2)
Publication Number
Publication Date
AU6307186A
true
AU6307186A
(en)
1987-04-30
AU575499B2
AU575499B2
(en)
1988-07-28
Family
ID=25148357
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU63071/86A
Ceased
AU575499B2
(en)
1985-10-21
1986-09-23
A dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
Country Status (13)
Country
Link
US
(1)
US4649625A
(en)
EP
(1)
EP0220410B1
(en)
JP
(1)
JPH06101546B2
(en)
KR
(1)
KR900002885B1
(en)
CN
(1)
CN1005883B
(en)
AU
(1)
AU575499B2
(en)
BR
(1)
BR8604546A
(en)
CA
(1)
CA1232362A
(en)
DE
(1)
DE3688231T2
(en)
ES
(1)
ES2003376A6
(en)
HK
(1)
HK90993A
(en)
IN
(1)
IN167820B
(en)
ZA
(1)
ZA866625B
(en)
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patent/ZA866625B/en
unknown
1986-09-09
CN
CN86105868.2A
patent/CN1005883B/en
not_active
Expired
1986-09-11
CA
CA000518033A
patent/CA1232362A/en
not_active
Expired
1986-09-23
BR
BR8604546A
patent/BR8604546A/en
not_active
IP Right Cessation
1986-09-23
AU
AU63071/86A
patent/AU575499B2/en
not_active
Ceased
1986-10-15
ES
ES8602599A
patent/ES2003376A6/en
not_active
Expired
1993
1993-09-02
HK
HK909/93A
patent/HK90993A/en
not_active
IP Right Cessation
Also Published As
Publication number
Publication date
HK90993A
(en)
1993-09-10
JPS6298766A
(en)
1987-05-08
IN167820B
(en)
1990-12-22
EP0220410B1
(en)
1993-04-07
EP0220410A2
(en)
1987-05-06
DE3688231T2
(en)
1993-11-04
US4649625A
(en)
1987-03-17
BR8604546A
(en)
1987-05-26
KR870004513A
(en)
1987-05-11
CA1232362A
(en)
1988-02-02
ES2003376A6
(en)
1988-11-01
AU575499B2
(en)
1988-07-28
DE3688231D1
(en)
1993-05-13
CN86105868A
(en)
1987-06-10
JPH06101546B2
(en)
1994-12-12
ZA866625B
(en)
1987-06-24
CN1005883B
(en)
1989-11-22
EP0220410A3
(en)
1989-05-10
KR900002885B1
(en)
1990-05-01
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