AU714520B2 - Creación de Inventos y Patentes con Inteligencia Artificial

AU714520B2 – Thin film fabrication technique for implantable electrodes
– Google Patents

AU714520B2 – Thin film fabrication technique for implantable electrodes
– Google Patents
Thin film fabrication technique for implantable electrodes

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Publication number
AU714520B2

AU714520B2
AU44762/96A
AU4476296A
AU714520B2
AU 714520 B2
AU714520 B2
AU 714520B2
AU 44762/96 A
AU44762/96 A
AU 44762/96A
AU 4476296 A
AU4476296 A
AU 4476296A
AU 714520 B2
AU714520 B2
AU 714520B2
Authority
AU
Australia
Prior art keywords
pads
wires
forming
sacrificial layer
electrodes
Prior art date
1996-01-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Ceased

Application number
AU44762/96A
Other versions

AU4476296A
(en

Inventor
John Parker
Claudiu Treaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Cochlear Ltd

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Cochlear Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1996-01-31
Filing date
1996-01-31
Publication date
2000-01-06

1996-01-31
Application filed by Cochlear Ltd
filed
Critical
Cochlear Ltd

1997-08-22
Publication of AU4476296A
publication
Critical
patent/AU4476296A/en

2000-01-06
Application granted
granted
Critical

2000-01-06
Publication of AU714520B2
publication
Critical
patent/AU714520B2/en

2016-01-31
Anticipated expiration
legal-status
Critical

Status
Ceased
legal-status
Critical
Current

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Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

A—HUMAN NECESSITIES

A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE

A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY

A61N1/00—Electrotherapy; Circuits therefor

A61N1/02—Details

A61N1/04—Electrodes

A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode

A—HUMAN NECESSITIES

A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE

A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY

A61N1/00—Electrotherapy; Circuits therefor

A61N1/02—Details

A61N1/04—Electrodes

A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode

A61N1/0526—Head electrodes

A61N1/0541—Cochlear electrodes

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 – H01L21/326, e.g. sealing of a cap to a base of a container

H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

H01L21/568—Temporary substrate used as encapsulation process aid

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/0001—Technical content checked by a classifier

H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

H—ELECTRICITY

H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

H05K3/00—Apparatus or processes for manufacturing printed circuits

H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern

H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T29/00—Metal working

Y10T29/42—Piezoelectric device making

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T29/00—Metal working

Y10T29/49—Method of mechanical manufacture

Y10T29/49002—Electrical device making

Y10T29/49117—Conductor or circuit manufacturing

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T29/00—Metal working

Y10T29/49—Method of mechanical manufacture

Y10T29/49002—Electrical device making

Y10T29/49117—Conductor or circuit manufacturing

Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

Y10T29/49126—Assembling bases

Abstract

An elongated implantable electrode assembly includes a set of electrode pads arranged in a pre-selected pattern, and a plurality of longitudinal wires, each wire being connected to at least one pad. The electrode assembly is formed by first depositing the pads on a sacrificial layer, adding wires to the pad, embedding the pads and wires in a carrier and then removing the sacrificial layer. These steps can be performed using photolithographic techniques.

Description

WO 97/28668 PCT/AU96/00043 1 THIN FILM FABRICATION TECHNIQUE FOR IMPLANTABLE ELECTRODES TECHNICAL FIELD This invention relates to a method of making electrodes particularly suited for implantation into an organism, using thin film technology normally used for the manufacture of integrated circuits.
BACKGROUND ART A microelectrode system for neural stimulation or recording consists of a series of conducting pads which are placed close to the target neurones. The pads are connected to recording or stimulating electronics via conductors which are insulated from each other and from the surrounding medium. One such electrode arrangement which is in common use today is made by the Cochlear Limited of Lane Cove, New South Wales, Australia, under the name Cochlear Implant CI22M. This device consists of a number of platinum rings or balls positioned along a flexible insulating carrier, generally made from silicon rubber.
Attempts to use thin film processing techniques to fabricate these electrodes have failed to produce a reliable electrode suitable for use in humans. For example, electrodes have been constructed with silicon substrates. These micromachined devices may be suitable WO 97/28668 PCT/AU96/00043 2 for cochlear implant electrodes. See Frazier AB, Ahn CH, Allen MG, «Development of micro machined devices using polyamide-based processes» Sensors and Actuators 1994; 47-55. However, they are extremely thin (5-15 um) in order that they can be flexible enough to be inserted into the cochlea. Because of this extremely small dimension, these electrodes are very brittle and difficult to handle.
In general, the reason why thin film techniques have I0 not been applied to commercial cochlear electrode production or the production of other neural electrodes lies in the difficulty of selecting materials which are compatible with both the processing techniques and with the target tissue in which the device has to be used. The choice of conductor is limited to noble metals such as platinum or iridium.
There are much wider choices in the insulating material, but the following properties must be maintained: 1. Biocompatibility 2. Stability to the processes that are used to fabricate the metalization patterns.
3. Flexibility and mechanical compatibility with the target organ.
So far, materials which adequately fulfil the requirements of point 1 and 2 above do not have the required mechanical properties of point 3. Thus clearly there is a need for an improved technique for commercial production of electrodes, such as cochlear implants, and WO 97/28668 PCT/AU96/00043 3 the like, which can be used relatively inexpensively and efficiently, taking advantage of photolithographic techniques.
DISCLOSURE OF THE INVENTION In view of the above, it is an object of the present invention to provide a method of making implantable electrode systems or arrays using thin film technology.
According to one aspect of the invention there is io provided a method of making an elongated implantable electrode assembly comprising the steps of: providing a sacrificial layer; forming a plurality of pads on said sacrificial layer, said pads being made of an electrically conducting, biocompatible material; forming a plurality of wires, each wire being connected to at least one of said pads; embedding said pads and said wires in an electrically nonconductive material to form an assembly body; and removing said sacrificial layer from said body.
According to another aspect of the invention there is provided a method of forming an electrode assembly having a plurality of electrodes and wires extending longitudinally through the assembly and connected through said electrodes, said method comprising the steps of forming said wires; WO 97/28668 PCT/AU96/00043 4 forming a carrier about said wires and pads, said carrier being made of a flexible non-conducting material; and removing said sacrificial layer.
The application of thin film techniques has obvious advantages over the more laborious, time consuming hand assembly techniques. Thin film photolithographic techniques can be used to fabricate small structures rapidly with higher density of electrodes than is possible with hand assembly.
This invention allows the conductors to be formed by photolithographic processes. Elastomeric insulation is then added to free standing conductor patterns thus formed. This technique has the added advantage that the metal-polymer adhesion can be more easily optimized as the polymerization is a low energy process. Achieving a good adhesion between metal films and polymer supports ensures the mechanical integrity of the device. Most metal deposition processes intrinsically require high energy levels. For instance, in thermal evaporation or sputtering metal atoms are used which have a high energy level when they impact the polymer surface. Chemical rearrangements which occur as a result of this bombardment lower the metal polymer adhesion. A solution proposed herein is to add the polymer to the metal rather than the other way around. The following is a description of a process based on standard thin film techniques which allows this to be done. The technique is illustrated with a cochlear implant electrode but other neural WO 97/28668 PCT/AU96/00043 5 stimulating or recording electrodes could be made in a similar way.
Briefly, in accordance with an embodiment of this invention, an electrode array suitable for implantation into a patient’s body consists of a plurality of electrode pads disposed in a preselected pattern and imbedded into an elongated carrier made of a relatively stiff, non-conductive material. The carrier must be sufficiently rigid to allow the electrode assembly to be lo inserted smoothly into the body of a patient through an incision made for this purpose, or through a natural cavity or opening. Preferably the carrier has a minimal cross-section to ensure that during implantation, it requires only a small incision or opening, and that it does not interfere with the patient’s tissues. The carrier includes a distal end adjacent to which at least some of the pads are disposed, and a proximal end. A plurality of connecting wires extend through the carrier body from the pads to the proximal end. At the proximal end, these wires are connected by coupling means to electronic circuitry for sending to and/or receiving electrical signals from the pads.
A photolithographic process is used to produce the electrode assembly using a sacrificial layer as the initial base. More particularly, first, pads are formed on the base in the preselected pattern. Next, pad connectors are added to the pads. The third step consists of forming wires extending from the pad connectors to the proximal end. The wires, connectors and pads are WO 97/28668 PCT/AU96/00043 6 then embedded or encapsulated in a plastic sheath which forms the carrier, and the base is eliminated.
Optionally, the wires are formed with strain relief zones constructed and arranged to allow the wires to flex during manufacture and implantation without breaking.
These zones advantageously also provide a strong bond with the encapsulating sheath.
BRIEF DESCRIPTION OF THE DRAWINGS I0 Figures IA- 11 show in perspective the steps of making an electrode assembly in accordance with this invention; Figures 2A-F shows a side sectional view of the electrode assembly during some of the steps of Figure 1; Figure 3 shows a flow chart for the subject method; Figure 4A-C show the masks used to make an electrode assembly in accordance with a first embodiment of the invention; Figures 5A-I show the masks used to make an electrode assembly in accordance with a second embodiment; Figure 5J shows a cross sectional view of an electrode assembly constructed by using the masks of Figures and Figure 6 shows a cross-sectional view of an alternative embodiment of the invention.
MODES FOR CARRYING OUT THE INVENTION In one embodiment of the invention, electrode production is carried out on a sacrificial layer made of WO 97/28668 PCT/AU96/00043 7 a material selected to withstand all of the conditions of the processing steps but which can be removed by dissolution, by peeling or by heating.
The electrode pads, electrode and wires are formed by a photolithographic technique, mainly by plating platinum or another suitable metal through a polyimide mask. The process relies on a combination of three basic techniques: i. Thermal or electron-beam evaporation of platinum; 2. Masking and etching; and 3. Film thickening by electrolytic deposition.
Alteratively, platinum can be deposited directly on a copper substrate through the desired mask by electroplating.
Each wire is attached to an electrode pad through connectors. The connectors are arranged so that when the polyimide mask is removed the wires will be self-supporting in mid-air. Preferably the wires are formed with steps or flexible zones etched into the polyamide to improve electrode longitudinal flexibility and facilitate structure encapsulation in the corner.
The polyimide in the structures can be removed by either plasma etching or by chemical etch.
A polymer backing, parylene or silicone rubber, is then added to the free standing electrode structure in two steps. Firstly, the back of the electrode is formed, then the sacrificial layer copper substrate) is removed. If the sacrificial layer is a material which WO 97/28668 PCT/AU96/00043 8 can be etched then it is possible that the polymer may be added in just a single step. This is achieved by forming a channel in the substrate material with a simple undercut etch.
Referring now to the Figures, in order to make an electrode assembly, in accordance with this embodiment of the invention, first, a sacrificial layer 10 is provided, made for example of polished copper (step 100) (Figs. 1A, 2A, and This layer must have a thickness selected so that it is strong enough to withstand the chemical action the other processing steps require to manufacture the electrode assembly.
Next, a plurality of electrode pads 12, 14 are formed on layer 10 (step 102). These pads are 1is preferably made of a highly conductive biocompatible material such as platinum, iridium or other similar material. As previously mentioned, preferably the pads are formed on layer 10 using thin film techniques well known in the art of manufacturing integrated circuits.
More specifically, as shown in Figures 1B-lD, step 102 consists of a number of substeps. First, (Figure 1B) the layer 10 is covered, for example by spinning, with a thin layer 16 of photopolymerisable polymeric (PR) material.
Next, a photolithographic technique is used to make apertures 18, 20 in layer 16, having the dimensions of the pads 12, 14. The photolithographic technique involves applying a mask (not shown) to the layer 16, exposing the mask and layer 16 to light having a specific wavelength, removing the mask, and developing the layer WO 97/28668 PCT/AU96/00043 9 16 to dissolve the portions exposed to light to generate the apertures 18, 20. These steps are well known in the art and need not be described in more detail herein.
Next, platinum is applied to layer 16, for example by sputtering, or thermal electron-beam evaporation to form the pads 12, 14 in holes 18, 20. Finally, the layer 16 is dissolved leaving the pads 12, 14, as shown in Figures ID and 2B.
Alternatively, pads 12, 14 could be formed by apply- I0 ing a mask onto layer 10, electroplating platinum through apertures in the mask, and then removing the mask.
In the following step 104 the pad contacts are added. This step 104 is performed essentially by repeating the substeps used to form pads 12, 14. As shown in Figure 1E, first a layer 22 of PR is applied to both layer 10 and pads 12, 14. Next, two round apertures 24, 26 are formed in layer 22 on top of pads 12, 14. A third aperture 28 is also formed on top layer 10 in a location between pads 12, 14, as shown in Figure 1E. Next, platinum is deposited (Figure 1F), for example by vacuum or by electroplating in apertures 24, 26 for making contacts 32. The resulting structure is shown in Figure 2C.
Next, as indicated by step 106, the wires 34, 36 for the pads 12, 14, as well as a flexure zone 38 are formed.
For this purpose, channels 40 and 42 are etched by using another lithographic mask (not shown). Channel leads from contact 30 to a proximal end of the assembly (not shown) and channel 42 leads from contact 32 also to the proximal end. Next, platinum is introduced into the _1~-1 WO 97/28668 PCT/AU96/00043 10 channels 40 and 42, for example, by electroplating.
Finally, layer 22 is removed, leaving the structures shown in Figures 1H and 2D. Importantly, the wire 34 includes a step which dips down toward layer 10 and goes back up again, as best seen in Figure 2D, thereby forming a reinforcing or flexible zone 38. This step strengthens the wire 34 so that it is substantially self-supporting as it extends through the air above pad 14.
In the steps described above the PR may be removed I0 by either plasma etching or by chemical etch.
Next, an insulating material 46, made for example of parylene or silicone rubber is applied on the pads 12, 14, contacts 30, 32 and wires 34, 36 to embed the same and form a cohesive elongated body 48 (step 108, Figure 2E) Finally (step 110), the sacrificial layer 10 is removed, leaving the completed electrode assembly (Figures I, 2F). The material 46 may be further molded to or laminated to a preselected shape.
Figures 1 and 2 show the steps for making the electrode assembly at a microscopic level. Figures 4A-C and Figs 5A-J show two different schemes for making the electrode assembly at a macroscopic level.
More particularly, Figures 4A-C show some of the masks used to make the apertures of Figure 1 and 2 and their respective relationship. Figure 4A shows mask 160 with square zones 161. This mask is applied to layer 16 (Figure 1B) to generate the holes 18, WO 97/28668 PCT/AU96/00043 11 Figure 4B shows a mask 162 consisting of a plurality of bar shaped zones 164. At the distal end, the mask 162 is formed with round 166. This mask is used to generate the apertures 24, 26 and 28 in Figure 1E which result respectively in contacts 30, 32 and steps 38. Each zone 164 forms a step 38.
Figure 4C shows a mask 168 used to generate the longitudinal apertures 40, 42, (Figure IG) which generate the wires 34, 36 (Figure 1H) As seen in Figure 4C, the io mask includes several substantially parallel dark lines 170. Each line 170 includes a proximal end 172 for connection to an outside terminal (not shown) and a distal end 174 electrically coupled to a connector such as Thus, each pad is connected to a corresponding wire extending through the length of the electrode system The process described above may be used to manufacture an electrode assembly having a large number of electrodes. For example, in Figures 4A-4C the masks can be used to make an assembly with 22 electrodes, wherein the wires are all arranged essentially in a common layer.
However, for an assembly with a larger number of electrodes and/or if the electrode assembly must be limited in cross-sectional area, a multilayered approach is necessary. Figures 5A-SJ show the masks for making a 22-electrode assembly in three layers. Figures 5A-5C and show the layers for eight electrodes each, while Figures 5G-5I show the masks for six additional electrodes. Preferably the bases of masks in Figures 5B, and 5H are aligned so that the steps formed in the wires WO 97/28668 PCT/AU96/00043 12 are superimposed as shown in the cross-sectional view of Figure 5J of an electrode assembly made using the masks of Figures In this embodiment, the electrodes are made in three different sets, marked in the figures as 212A, 212B and 212C, each being provided with their own connector pads and wires by using the techniques described for the embodiment of Figures 4A-4C. After the three sets are completed, they are disposed in a juxtaposed position, i0 and sandwiched as shown in Figure 5J. Thereafter, sheath 246 is applied to form the electrode carrier.
In an alternative embodiment of the invention shown in Figure 6, sacrificial layer 310 is made of a material which can be etched so that two grooves 302, 304 are formed therein prior to the formation of the electrode assembly. The electrode assembly includes electrode 312, connector 330 and wire 334, all disposed in a sheath or carriers 346. The carrier 346 is formed around the electrodes, connectors and wires, such that it flows into the grooves 302, 304. Similar grooves are formed and filled with insulating material underneath flexible zones 38 (Figures 1H and 2D) of the wires. After the carrier is set, the whole electrode assembly 350 can be peeled off sheet 310 in a single step.
The current electrode production techniques rely on tedious and costly hand assembly techniques. The photolithographic techniques disclosed herein provide several distinct advantages: i. Low cost and increased throughput of devices; WO 97/28668 PCT/AU96/00043 13 2. Much higher density electrodes possible; 3. Costly hard tooling molds) can be eliminated; and 4. Flexible and rapid design cycles.
s Although the invention has been described with reference to several particular embodiments, it is to be understood that these embodiments are merely illustrative of the application of the principles of the invention.
Accordingly, the embodiments described in particular io should be considered exemplary, not limiting, with respect to the following claims.
INDUSTRIAL APPLICABILITY An implantable electrode assembly made in accordance with the method of the invention may be used in cochlear implants.

Claims (12)

1. A method of making an elongated implantable electrode assembly comprising the steps of: providing a sacrificial layer; forming a plurality of pads on said sacrificial layer, said pads being made of an electrically conducting, biocompatible material; forming a plurality of wires, each wire being connected to at least one of said pads; embedding said pads and said wires in an electrically nonconductive material to form an assembly body; and removing said sacrificial layer from said body.

2. The method of claim 1 wherein said pads and wires are formed by lithographic techniques.

3. The method of claim 1 wherein said pads and wires are formed of platinum.

4. The method of claim 1 further comprising the step of forming pad contacts between said wires and corresponding pads.

The method of claim 1 further comprising forming in said wires reinforcing zones.

6. The method of claim 5 wherein said zones are longitudinally offset. SAMENDED SHEET IPEAI A U SPCT/Au 6/0004 3 RECEIVED 1 2 SEP 1997

7. A method of forming an electrode assembly having a plurality of electrodes and wires extending longitudinally through the assembly and connected to said electrodes, said method comprising the steps of: providing a sacrificial layer; forming said wires; forming a carrier on said sacrificial layer about said wires, said carrier being made of a flexible non-conducting material; and removing said sacrificial layer.

8. The method of claim 7 further comprising the step of forming pads on said sacrificial layer in a pre-selected pattern, each wire being associated with a pad.

9. The method of claim 8 wherein said pads are formed substantially simultaneously.

The method of claim 8 wherein said pads are partitioned into a number of sets, said method comprising forming the sets of pads separately, each set having its own wires, and then assembling said sets.

11. The method of claim 7 wherein said wires are formed with reinforcing zones. c1- «a AMENDED SHEET tPEA/AU PCT/AU 9 6 0 0 0 4 3 RECEIVED 1 2 SEP 1997 16

12. The method of claim 11 wherein said reinforcing zones re formed by generating said wires with steps at predetermined locations. Dated this 11 day of September, 1997 COCHLEAR LIMITED Patent Attorneys for the Applicant PETER MAXWELL ASSOCIATES AMENDED SHEET IPEAAU

AU44762/96A
1996-01-31
1996-01-31
Thin film fabrication technique for implantable electrodes

Ceased

AU714520B2
(en)

Applications Claiming Priority (3)

Application Number
Priority Date
Filing Date
Title

CA002246057A

CA2246057C
(en)

1996-01-31
1996-01-31
Thin film fabrication technique for implantable electrodes

PCT/AU1996/000043

WO1997028668A1
(en)

1996-01-31
1996-01-31
Thin film fabrication technique for implantable electrodes

US08/641,537

US5720099A
(en)

1996-01-31
1996-05-01
Thin film fabrication technique for implantable electrodes

Publications (2)

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AU4476296A

AU4476296A
(en)

1997-08-22

AU714520B2
true

AU714520B2
(en)

2000-01-06

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AU44762/96A
Ceased

AU714520B2
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1996-01-31
1996-01-31
Thin film fabrication technique for implantable electrodes

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US
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US5720099A
(en)

EP
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EP0888701B1
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AT
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ATE375070T1
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AU
(1)

AU714520B2
(en)

CA
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CA2246057C
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WO1997028668A1
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WO1997028668A1
(en)

1997-08-07

US5720099A
(en)

1998-02-24

AU4476296A
(en)

1997-08-22

CA2246057A1
(en)

1997-08-07

EP0888701A1
(en)

1999-01-07

EP0888701A4
(en)

2004-11-10

ATE375070T1
(en)

2007-10-15

CA2246057C
(en)

2005-12-20

EP0888701B1
(en)

2007-10-03

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