GB1002899A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1002899A – Improvements in or relating to the preparation of monocrystalline semiconductor materials
– Google Patents

GB1002899A – Improvements in or relating to the preparation of monocrystalline semiconductor materials
– Google Patents
Improvements in or relating to the preparation of monocrystalline semiconductor materials

Info

Publication number
GB1002899A

GB1002899A
GB18803/62A
GB1880362A
GB1002899A
GB 1002899 A
GB1002899 A
GB 1002899A
GB 18803/62 A
GB18803/62 A
GB 18803/62A
GB 1880362 A
GB1880362 A
GB 1880362A
GB 1002899 A
GB1002899 A
GB 1002899A
Authority
GB
United Kingdom
Prior art keywords
semi
reaction gas
conductor material
hydrogen
silicon
Prior art date
1962-05-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB18803/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens and Halske AG

Siemens AG

Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1962-05-16
Filing date
1962-05-16
Publication date
1965-09-02

1962-05-16
Application filed by Siemens and Halske AG, Siemens AG
filed
Critical
Siemens and Halske AG

1962-05-16
Priority to GB18803/62A
priority
Critical
patent/GB1002899A/en

1965-09-02
Publication of GB1002899A
publication
Critical
patent/GB1002899A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

239000004065
semiconductor
Substances

0.000
title
abstract
15

239000000463
material
Substances

0.000
title
abstract
13

239000012495
reaction gas
Substances

0.000
abstract
13

239000000126
substance
Substances

0.000
abstract
10

238000000151
deposition
Methods

0.000
abstract
8

229910000039
hydrogen halide
Inorganic materials

0.000
abstract
8

239000012433
hydrogen halide
Substances

0.000
abstract
8

XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound

[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
6

229910052796
boron
Inorganic materials

0.000
abstract
6

230000008021
deposition
Effects

0.000
abstract
6

239000001257
hydrogen
Substances

0.000
abstract
6

229910052739
hydrogen
Inorganic materials

0.000
abstract
6

239000010703
silicon
Substances

0.000
abstract
6

229910052710
silicon
Inorganic materials

0.000
abstract
6

ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound

[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
5

OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound

[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
5

150000001875
compounds
Chemical class

0.000
abstract
5

229910052698
phosphorus
Inorganic materials

0.000
abstract
5

239000011574
phosphorus
Substances

0.000
abstract
5

229910003910
SiCl4
Inorganic materials

0.000
abstract
4

239000013078
crystal
Substances

0.000
abstract
4

FDNAPBUWERUEDA-UHFFFAOYSA-N
silicon tetrachloride
Chemical compound

Cl[Si](Cl)(Cl)Cl
FDNAPBUWERUEDA-UHFFFAOYSA-N
0.000
abstract
4

UFHFLCQGNIYNRP-UHFFFAOYSA-N
Hydrogen
Chemical compound

[H][H]
UFHFLCQGNIYNRP-UHFFFAOYSA-N
0.000
abstract
3

150000002431
hydrogen
Chemical class

0.000
abstract
3

UHZYTMXLRWXGPK-UHFFFAOYSA-N
phosphorus pentachloride
Chemical compound

ClP(Cl)(Cl)(Cl)Cl
UHZYTMXLRWXGPK-UHFFFAOYSA-N
0.000
abstract
3

FAQYAMRNWDIXMY-UHFFFAOYSA-N
trichloroborane
Chemical compound

ClB(Cl)Cl
FAQYAMRNWDIXMY-UHFFFAOYSA-N
0.000
abstract
3

229910015844
BCl3
Inorganic materials

0.000
abstract
2

238000005137
deposition process
Methods

0.000
abstract
2

230000000694
effects
Effects

0.000
abstract
2

239000007792
gaseous phase
Substances

0.000
abstract
2

229910052732
germanium
Inorganic materials

0.000
abstract
2

GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound

[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
2

150000002366
halogen compounds
Chemical class

0.000
abstract
2

229910052738
indium
Inorganic materials

0.000
abstract
2

APFVFJFRJDLVQX-UHFFFAOYSA-N
indium atom
Chemical compound

[In]
APFVFJFRJDLVQX-UHFFFAOYSA-N
0.000
abstract
2

150000003377
silicon compounds
Chemical class

0.000
abstract
2

VXEGSRKPIUDPQT-UHFFFAOYSA-N
4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline
Chemical compound

C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1
VXEGSRKPIUDPQT-UHFFFAOYSA-N
0.000
abstract
1

GDFCWFBWQUEQIJ-UHFFFAOYSA-N
[B].[P]
Chemical compound

[B].[P]
GDFCWFBWQUEQIJ-UHFFFAOYSA-N
0.000
abstract
1

125000004429
atom
Chemical group

0.000
abstract
1

-1
boron halide
Chemical class

0.000
abstract
1

238000010586
diagram
Methods

0.000
abstract
1

230000000737
periodic effect
Effects

0.000
abstract
1

239000005049
silicon tetrachloride
Substances

0.000
abstract
1

Classifications

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B29/02—Elements

C30B29/06—Silicon

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth

C30B25/02—Epitaxial-layer growth

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B29/02—Elements

C30B29/08—Germanium

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/02104—Forming layers

H01L21/02365—Forming inorganic semiconducting materials on a substrate

H01L21/02518—Deposited layers

H01L21/02521—Materials

H01L21/02524—Group 14 semiconducting materials

H01L21/02532—Silicon, silicon germanium, germanium

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/02104—Forming layers

H01L21/02365—Forming inorganic semiconducting materials on a substrate

H01L21/02518—Deposited layers

H01L21/0257—Doping during depositing

H01L21/02573—Conductivity type

H01L21/02576—N-type

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/02104—Forming layers

H01L21/02365—Forming inorganic semiconducting materials on a substrate

H01L21/02518—Deposited layers

H01L21/0257—Doping during depositing

H01L21/02573—Conductivity type

H01L21/02579—P-type

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/02104—Forming layers

H01L21/02365—Forming inorganic semiconducting materials on a substrate

H01L21/02612—Formation types

H01L21/02617—Deposition types

H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Abstract

A doped monocrystal of a silicon or germanium semi-conductor material is made by simultaneously depositing said semi-conductor material and one or more doping substances selected from the elements of Group III or V of the Periodic System from the gaseous phase on to a heated carrier or the semi-conductor material. This is effected by passing a reaction gas comprising a gaseous halogen compound of the semi-conductor material, hydrogen, and a gaseous compound of one or more doping substances over the heated carrier. Hydrogen halide is added to the «reaction gas» during at least part of the deposition process. The ratio of semi-conductor material deposited to doping substance deposited is controlled by varying the amount of hydrogen halide added and/or by varying the mole ratio of semiconductor compound to hydrogen in the reaction gas. Specified doping substances are boron, phosphorus, and indium. In an example, the «reaction gas» comprised SiCl4, H2, BCl3 and PCl5. A p-conductive layer due to complete deposition of boron together with phosphorus was formed when no hydrogen halide was present in the reaction gas but when it was added thereto a n-conductive layer due solely to deposition of phosphorus was formed. Data for the deposition of consecutive layers of p, n, and p+ conductivity types on a silicon crystal are tabulated. Specifications 926,807, 943,360 and 960,892 are referred to.ALSO:A doped mono crystal of a silicon or germanium semi-conductor material is made by simultaneously depositing said semi-conductor material and one or more doping substances selected from the elements of Group III or Group V of the Period System from the gaseous phase on to a heated carrier of the semi-conductor material. This is effected by passing a «reaction gas» comprising a gaseous halogen compound of the semi-conductor material, hydrogen, and a gaseous compound of one or more doping substances over the heated carrier. Hydrogen halide is added to the «reaction gas» during at least part of the deposition process. The ratio of semi-conductor material deposited to doping substance deposited is controlled by varying the amount of hydrogen halide added and/or by varying the mole ratio of semi-conductor compound to hydrogen in the reaction gas. Specified doping substances are boron phosphorus, and indium. In an example, the «reaction gas» comprised silicon tetrachloride, hydrogen, boron trichloride, and phosphorus pentachloride. The mole percentage ratios of the doping substance to semi-conductor material were 5 x 10-4 for BCl3/SiCl4 and 2.5 x 10-6\h for PCl5/SiCl4. A p-conductive layer of resistivity 0.15 ohm./cm., due to complete deposition of boron together with phosphorus, was formed when no hydrogen halide was added to the «reaction gas»; but when 1 mole per cent HCl/H2 was added, a n-conductive layer of resistivity 4 ohm./cm. due solely to deposition of phosphorus was formed. Variation of the mole ratio of SiCl4/H2 in the «reaction gas» could also be made to produce the above effects. Data for the deposition of consecutive layers of p, n, and p+ conductivity types on a silicon crystal, using the abovementioned proportions of doping compounds, are tabulated. Diagrams (not shown) illustrate (a) the effect, at 1400 DEG K., of change in the mole ratio of silicon compound to hydrogen (which may be brought about by hydrogen halide addition) upon the mole percentage ratio of boron halide to silicon compound in the «reaction gas» and on the atom percentage ratio of boron to silicon in the deposited layer; (b) the dependence of the deposited quantities of doping substance, boron, and semi-conductor material, silicon, on the surface temperature of the crystal and the mole percentage of hydrogen halide added to the reaction gas. Specifications 926,807, 943,360 and 960,892 are referred to.

GB18803/62A
1962-05-16
1962-05-16
Improvements in or relating to the preparation of monocrystalline semiconductor materials

Expired

GB1002899A
(en)

Priority Applications (1)

Application Number
Priority Date
Filing Date
Title

GB18803/62A

GB1002899A
(en)

1962-05-16
1962-05-16
Improvements in or relating to the preparation of monocrystalline semiconductor materials

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

GB18803/62A

GB1002899A
(en)

1962-05-16
1962-05-16
Improvements in or relating to the preparation of monocrystalline semiconductor materials

Publications (1)

Publication Number
Publication Date

GB1002899A
true

GB1002899A
(en)

1965-09-02

Family
ID=10118693
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB18803/62A
Expired

GB1002899A
(en)

1962-05-16
1962-05-16
Improvements in or relating to the preparation of monocrystalline semiconductor materials

Country Status (1)

Country
Link

GB
(1)

GB1002899A
(en)

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0784106A1
(en)

1996-01-12
1997-07-16
Toshiba Ceramics Co., Ltd.
Epitaxial growth method

US7772097B2
(en)

2007-11-05
2010-08-10
Asm America, Inc.
Methods of selectively depositing silicon-containing films

1962

1962-05-16
GB
GB18803/62A
patent/GB1002899A/en
not_active
Expired

Cited By (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0784106A1
(en)

1996-01-12
1997-07-16
Toshiba Ceramics Co., Ltd.
Epitaxial growth method

US5904769A
(en)

1996-01-12
1999-05-18
Toshiba Ceramics Co., Ltd.
Epitaxial growth method

US7772097B2
(en)

2007-11-05
2010-08-10
Asm America, Inc.
Methods of selectively depositing silicon-containing films

Información de contacto