GB1045769A – Improvements in or relating to field effect transistors
– Google Patents
GB1045769A – Improvements in or relating to field effect transistors
– Google Patents
Improvements in or relating to field effect transistors
Info
Publication number
GB1045769A
GB1045769A
GB2382264A
GB2382264A
GB1045769A
GB 1045769 A
GB1045769 A
GB 1045769A
GB 2382264 A
GB2382264 A
GB 2382264A
GB 2382264 A
GB2382264 A
GB 2382264A
GB 1045769 A
GB1045769 A
GB 1045769A
Authority
GB
United Kingdom
Prior art keywords
drain electrode
electrode
gate electrodes
source
june
Prior art date
1964-06-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2382264A
Inventor
Frederick Arthur Inskip
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SECR AVIATION
Minister of Aviation
Original Assignee
SECR AVIATION
Minister of Aviation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-06-09
Filing date
1964-06-09
Publication date
1966-10-19
1964-06-09
Application filed by SECR AVIATION, Minister of Aviation
filed
Critical
SECR AVIATION
1964-06-09
Priority to GB2382264A
priority
Critical
patent/GB1045769A/en
1966-10-19
Publication of GB1045769A
publication
Critical
patent/GB1045769A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
1,045,769. Semi-conductor; devices. MINISTER OF AVIATION. June 3, 1965 [June 9, 1964], No. 23822/64. Heading H1K. A field-effect device includes a common drain electrode, a plurality of source electrodes, and a separate plurality of gate electrodes located between the drain electrode and each source electrode so that an appropriate potential applied to a gate electrode will cut-off current flow between its associated source electrode and the drain electrode. Each source electrode S and its associated set of gate electrodes G may be located on a separate limb of the device, the limbs either radiating from a central drain electrode D as shown, or forming the teeth of a comb-shaped device of which the back member carries the drain electrode (Fig. 4, not shown). Each set of gate electrodes may be connected to a different selection from a plurality of inputs, yielding a » majority vote device.
GB2382264A
1964-06-09
1964-06-09
Improvements in or relating to field effect transistors
Expired
GB1045769A
(en)
Priority Applications (1)
Application Number
Priority Date
Filing Date
Title
GB2382264A
GB1045769A
(en)
1964-06-09
1964-06-09
Improvements in or relating to field effect transistors
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB2382264A
GB1045769A
(en)
1964-06-09
1964-06-09
Improvements in or relating to field effect transistors
Publications (1)
Publication Number
Publication Date
GB1045769A
true
GB1045769A
(en)
1966-10-19
Family
ID=10201873
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2382264A
Expired
GB1045769A
(en)
1964-06-09
1964-06-09
Improvements in or relating to field effect transistors
Country Status (1)
Country
Link
GB
(1)
GB1045769A
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3772536A
(en)
*
1967-09-20
1973-11-13
Trw Inc
Digital cell for large scale integration
US4783690A
(en)
*
1983-09-06
1988-11-08
General Electric Company
Power semiconductor device with main current section and emulation current section
1964
1964-06-09
GB
GB2382264A
patent/GB1045769A/en
not_active
Expired
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3772536A
(en)
*
1967-09-20
1973-11-13
Trw Inc
Digital cell for large scale integration
US4783690A
(en)
*
1983-09-06
1988-11-08
General Electric Company
Power semiconductor device with main current section and emulation current section
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