GB1060731A – Semiconductor devices and methods of preparing them
– Google Patents
GB1060731A – Semiconductor devices and methods of preparing them
– Google Patents
Semiconductor devices and methods of preparing them
Info
Publication number
GB1060731A
GB1060731A
GB38032/63A
GB3803263A
GB1060731A
GB 1060731 A
GB1060731 A
GB 1060731A
GB 38032/63 A
GB38032/63 A
GB 38032/63A
GB 3803263 A
GB3803263 A
GB 3803263A
GB 1060731 A
GB1060731 A
GB 1060731A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon
channels
aluminium
layers
Prior art date
1962-10-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38032/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1962-10-15
Filing date
1963-09-26
Publication date
1967-03-08
1963-09-26
Application filed by RCA Corp, Radio Corporation of America
filed
Critical
RCA Corp
1967-03-08
Publication of GB1060731A
publication
Critical
patent/GB1060731A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
6
238000000151
deposition
Methods
0.000
abstract
5
239000000758
substrate
Substances
0.000
abstract
5
108091006146
Channels
Proteins
0.000
abstract
4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
4
229910052782
aluminium
Inorganic materials
0.000
abstract
4
239000004411
aluminium
Substances
0.000
abstract
4
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
4
229910052710
silicon
Inorganic materials
0.000
abstract
4
239000010703
silicon
Substances
0.000
abstract
4
238000005275
alloying
Methods
0.000
abstract
3
PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound
[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
3
229910052737
gold
Inorganic materials
0.000
abstract
3
239000010931
gold
Substances
0.000
abstract
3
229910052757
nitrogen
Inorganic materials
0.000
abstract
3
229910052698
phosphorus
Inorganic materials
0.000
abstract
3
239000000377
silicon dioxide
Substances
0.000
abstract
3
IJGRMHOSHXDMSA-UHFFFAOYSA-N
Atomic nitrogen
Chemical compound
N#N
IJGRMHOSHXDMSA-UHFFFAOYSA-N
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
2
229910052796
boron
Inorganic materials
0.000
abstract
2
230000005669
field effect
Effects
0.000
abstract
2
239000000463
material
Substances
0.000
abstract
2
LIVNPJMFVYWSIS-UHFFFAOYSA-N
silicon monoxide
Chemical group
[Si-]#[O+]
LIVNPJMFVYWSIS-UHFFFAOYSA-N
0.000
abstract
2
VXEGSRKPIUDPQT-UHFFFAOYSA-N
4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline
Chemical compound
C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1
VXEGSRKPIUDPQT-UHFFFAOYSA-N
0.000
abstract
1
JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound
[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
abstract
1
229910001218
Gallium arsenide
Inorganic materials
0.000
abstract
1
102000004129
N-Type Calcium Channels
Human genes
0.000
abstract
1
108090000699
N-Type Calcium Channels
Proteins
0.000
abstract
1
OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound
[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
1
BQCADISMDOOEFD-UHFFFAOYSA-N
Silver
Chemical compound
[Ag]
BQCADISMDOOEFD-UHFFFAOYSA-N
0.000
abstract
1
PNEYBMLMFCGWSK-UHFFFAOYSA-N
aluminium oxide
Inorganic materials
[O-2].[O-2].[O-2].[Al+3].[Al+3]
PNEYBMLMFCGWSK-UHFFFAOYSA-N
0.000
abstract
1
229910052787
antimony
Inorganic materials
0.000
abstract
1
WATWJIUSRGPENY-UHFFFAOYSA-N
antimony atom
Chemical compound
[Sb]
WATWJIUSRGPENY-UHFFFAOYSA-N
0.000
abstract
1
CJOBVZJTOIVNNF-UHFFFAOYSA-N
cadmium sulfide
Chemical compound
[Cd]=S
CJOBVZJTOIVNNF-UHFFFAOYSA-N
0.000
abstract
1
229910052980
cadmium sulfide
Inorganic materials
0.000
abstract
1
150000001805
chlorine compounds
Chemical class
0.000
abstract
1
230000008021
deposition
Effects
0.000
abstract
1
239000008246
gaseous mixture
Substances
0.000
abstract
1
229910052732
germanium
Inorganic materials
0.000
abstract
1
GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound
[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
1
239000011521
glass
Substances
0.000
abstract
1
238000010438
heat treatment
Methods
0.000
abstract
1
229910052739
hydrogen
Inorganic materials
0.000
abstract
1
239000001257
hydrogen
Substances
0.000
abstract
1
125000004435
hydrogen atom
Chemical class
[H]*
0.000
abstract
1
WPYVAWXEWQSOGY-UHFFFAOYSA-N
indium antimonide
Chemical compound
[Sb]#[In]
WPYVAWXEWQSOGY-UHFFFAOYSA-N
0.000
abstract
1
238000009413
insulation
Methods
0.000
abstract
1
229920000620
organic polymer
Polymers
0.000
abstract
1
239000011574
phosphorus
Substances
0.000
abstract
1
-1
polyethylene terephthalate
Polymers
0.000
abstract
1
229920000139
polyethylene terephthalate
Polymers
0.000
abstract
1
239000005020
polyethylene terephthalate
Substances
0.000
abstract
1
239000005049
silicon tetrachloride
Substances
0.000
abstract
1
229910052709
silver
Inorganic materials
0.000
abstract
1
239000004332
silver
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1,060,731. Field effect transistors. RADIO CORPORATION OF AMERICA. Sept. 26, 1963 [Oct. 15, 1962], No. 38032/63. Heading H1K. A field effect transistor consists of superposed P- and N-type channels with common source and drain contacts and a single insulated gate electrode for controlling current flow in both channels. Such a device exhibits a drain current which increases for both positive and negative changes in gate voltage from a certain value. The P and N channels may be superposed on a poly- or mono-crystalline semiconductor or insulating substrate to form a PN-junction or with an insulating layer between them, suitable substrate materials being intrinsic silicon, glass, alumina and polyethylene terephthalate, The channels may each be of polycrystaline or monocrystalline material and may be of the same or different semi-conductors selected from germanium, silicon, gallium arsenide, indium antimonide and cadmium sulphide. The gate electrode, of aluminium, silver or gold is capacitively coupled to the channels through a layer of insulation such as an organic polymer or silica. Several devices may be formed on a common substrate and then subdivided or interconnected in any desired manner. A typical device, Fig. 1, is made by epitaxially depositing 2 Á thick N- and P-type silicon layers 25, 27 on a 1000 ohm cm. silicon substrate 23 from gaseous mixtures of hydrogen, silicon tetrachloride and chlorides of phosphorus and boron respectively. Source and drain regions 33, 35 and contacts 37, 39 are then formed by vapour depositing antimony-doped gold on the ends of the layers and alloying them through both layers. The gate is subsequently formed by vapour deposition of silicon monoxide 29 and aluminium 31. As an alternative the P-layer 25a (Fig. 4) is formed within the substrate by diffusing in boron from a deposited borondoped silica layer by heating in dry nitrogen.’ After removing the residual silica the surface is oxidized to form an N-type inversion layer 27a and overlying oxide layer. The oxide layer is removed except from the central part 29a of the inversion layer and source and drain electrodes formed by first vapour depositing antimony doped gold 41, 43 through a mask, and after alloying, vapour depositing aluminium 45, 47 and alloying it to the P and N layers. Finally an aluminium gate electrode 31a is provided. The theory of operation of the device is discussed.
GB38032/63A
1962-10-15
1963-09-26
Semiconductor devices and methods of preparing them
Expired
GB1060731A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US230449A
US3283221A
(en)
1962-10-15
1962-10-15
Field effect transistor
Publications (1)
Publication Number
Publication Date
GB1060731A
true
GB1060731A
(en)
1967-03-08
Family
ID=22865266
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB38032/63A
Expired
GB1060731A
(en)
1962-10-15
1963-09-26
Semiconductor devices and methods of preparing them
Country Status (8)
Country
Link
US
(1)
US3283221A
(en)
AT
(1)
AT245626B
(en)
BE
(1)
BE638316A
(en)
CH
(1)
CH441509A
(en)
DE
(1)
DE1283399B
(en)
ES
(1)
ES292458A1
(en)
GB
(1)
GB1060731A
(en)
NL
(1)
NL299194A
(en)
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2140617A
(en)
*
1980-03-03
1984-11-28
Raytheon Co
Methods of forming a field effect transistor
US4523368A
(en)
*
1980-03-03
1985-06-18
Raytheon Company
Semiconductor devices and manufacturing methods
GB2233822A
(en)
*
1989-07-12
1991-01-16
Philips Electronic Associated
A thin film field effect transistor
Families Citing this family (24)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3335038A
(en)
*
1964-03-30
1967-08-08
Ibm
Methods of producing single crystals on polycrystalline substrates and devices using same
BE666834A
(en)
*
1964-07-13
US3375419A
(en)
*
1965-02-25
1968-03-26
Union Carbide Corp
Field effect transistor with poly-p-xylylene insulated gate structure and method
US3378737A
(en)
*
1965-06-28
1968-04-16
Teledyne Inc
Buried channel field effect transistor and method of forming
US3459944A
(en)
*
1966-01-04
1969-08-05
Ibm
Photosensitive insulated gate field effect transistor
US3458798A
(en)
*
1966-09-15
1969-07-29
Ibm
Solid state rectifying circuit arrangements
US3461323A
(en)
*
1968-02-08
1969-08-12
Bendix Corp
Negative resistance semiconductor device
US3593070A
(en)
*
1968-12-17
1971-07-13
Texas Instruments Inc
Submount for semiconductor assembly
US3591852A
(en)
*
1969-01-21
1971-07-06
Gen Electric
Nonvolatile field effect transistor counter
US3967305A
(en)
*
1969-03-27
1976-06-29
Mcdonnell Douglas Corporation
Multichannel junction field-effect transistor and process
JPS4915668B1
(en)
*
1969-04-15
1974-04-16
US3648127A
(en)
*
1970-09-28
1972-03-07
Fairchild Camera Instr Co
Reach through or punch{13 through breakdown for gate protection in mos devices
US3914137A
(en)
*
1971-10-06
1975-10-21
Motorola Inc
Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition
US4021835A
(en)
*
1974-01-25
1977-05-03
Hitachi, Ltd.
Semiconductor device and a method for fabricating the same
US4065781A
(en)
*
1974-06-21
1977-12-27
Westinghouse Electric Corporation
Insulated-gate thin film transistor with low leakage current
US4000504A
(en)
*
1975-05-12
1976-12-28
Hewlett-Packard Company
Deep channel MOS transistor
US4132998A
(en)
*
1977-08-29
1979-01-02
Rca Corp.
Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
JPS6019152B2
(en)
*
1977-08-31
1985-05-14
インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン
field effect transistor
US4166223A
(en)
*
1978-02-06
1979-08-28
Westinghouse Electric Corp.
Dual field effect transistor structure for compensating effects of threshold voltage
NL7904200A
(en)
*
1979-05-29
1980-12-02
Philips Nv
LAYERED EFFECT TRANSISTOR.
JPS58188165A
(en)
*
1982-04-28
1983-11-02
Nec Corp
Semiconductor device
US4575746A
(en)
*
1983-11-28
1986-03-11
Rca Corporation
Crossunders for high density SOS integrated circuits
JPS62128175A
(en)
*
1985-11-29
1987-06-10
Hitachi Ltd
Semiconductor device
KR20060078925A
(en)
*
2004-12-30
2006-07-05
동부일렉트로닉스 주식회사
Mos transistor in which electrical current is controlled reversely
Family Cites Families (12)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US1900018A
(en)
*
1928-03-28
1933-03-07
Lilienfeld Julius Edgar
Device for controlling electric current
FR1037293A
(en)
*
1951-05-19
1953-09-15
Licentia Gmbh
Electrically controlled dry rectifier and its manufacturing process
US2756285A
(en)
*
1951-08-24
1956-07-24
Bell Telephone Labor Inc
Semiconductor signal translating devices
US2791759A
(en)
*
1955-02-18
1957-05-07
Bell Telephone Labor Inc
Semiconductive device
US2993998A
(en)
*
1955-06-09
1961-07-25
Sprague Electric Co
Transistor combinations
US2900531A
(en)
*
1957-02-28
1959-08-18
Rca Corp
Field-effect transistor
US2979427A
(en)
*
1957-03-18
1961-04-11
Shockley William
Semiconductor device and method of making the same
NL237225A
(en)
*
1958-03-19
NL245195A
(en)
*
1958-12-11
FR1293699A
(en)
*
1960-05-02
1962-05-18
Westinghouse Electric Corp
Semiconductor device
FR1306187A
(en)
*
1960-09-26
1962-10-13
Westinghouse Electric Corp
Unipolar transistor
BE632998A
(en)
*
1962-05-31
0
NL
NL299194D
patent/NL299194A/xx
unknown
BE
BE638316D
patent/BE638316A/xx
unknown
1962
1962-10-15
US
US230449A
patent/US3283221A/en
not_active
Expired – Lifetime
1963
1963-08-29
CH
CH1066163A
patent/CH441509A/en
unknown
1963-09-20
AT
AT759363A
patent/AT245626B/en
active
1963-09-26
GB
GB38032/63A
patent/GB1060731A/en
not_active
Expired
1963-10-10
DE
DER36306A
patent/DE1283399B/en
active
Pending
1963-10-14
ES
ES0292458A
patent/ES292458A1/en
not_active
Expired
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2140617A
(en)
*
1980-03-03
1984-11-28
Raytheon Co
Methods of forming a field effect transistor
US4523368A
(en)
*
1980-03-03
1985-06-18
Raytheon Company
Semiconductor devices and manufacturing methods
GB2233822A
(en)
*
1989-07-12
1991-01-16
Philips Electronic Associated
A thin film field effect transistor
Also Published As
Publication number
Publication date
NL299194A
(en)
AT245626B
(en)
1966-03-10
CH441509A
(en)
1967-08-15
US3283221A
(en)
1966-11-01
BE638316A
(en)
ES292458A1
(en)
1964-04-01
DE1283399B
(en)
1968-11-21
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