GB1064041A – Improvements in or relating to methods of manufacturing semiconductor devices
– Google Patents
GB1064041A – Improvements in or relating to methods of manufacturing semiconductor devices
– Google Patents
Improvements in or relating to methods of manufacturing semiconductor devices
Info
Publication number
GB1064041A
GB1064041A
GB7585/64A
GB758564A
GB1064041A
GB 1064041 A
GB1064041 A
GB 1064041A
GB 7585/64 A
GB7585/64 A
GB 7585/64A
GB 758564 A
GB758564 A
GB 758564A
GB 1064041 A
GB1064041 A
GB 1064041A
Authority
GB
United Kingdom
Prior art keywords
electrode material
semi
highly
electrode
layer
Prior art date
1963-03-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7585/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-03-29
Filing date
1964-03-29
Publication date
1967-04-05
1964-03-29
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd
1967-04-05
Publication of GB1064041A
publication
Critical
patent/GB1064041A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
C—CHEMISTRY; METALLURGY
C07—ORGANIC CHEMISTRY
C07J—STEROIDS
C07J1/00—Normal steroids containing carbon, hydrogen, halogen or oxygen, not substituted in position 17 beta by a carbon atom, e.g. estrane, androstane
C—CHEMISTRY; METALLURGY
C07—ORGANIC CHEMISTRY
C07J—STEROIDS
C07J75/00—Processes for the preparation of steroids in general
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/73—Bipolar junction transistors
Abstract
1,064,041. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. March 29, 1964 [March 29, 1963; Sept. 25, 1963], No. 7585/64. Heading HIK. An electrode material is alloyed to the surface of a semi-conductor body to form a highly-conductive recrystallized layer and is heated further in contact with an adjacent surface concentration of at least 3 x 10
GB7585/64A
1963-03-29
1964-03-29
Improvements in or relating to methods of manufacturing semiconductor devices
Expired
GB1064041A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
NL290930
1963-03-29
NL298354
1963-09-25
Publications (1)
Publication Number
Publication Date
GB1064041A
true
GB1064041A
(en)
1967-04-05
Family
ID=26641896
Family Applications (2)
Application Number
Title
Priority Date
Filing Date
GB7585/64A
Expired
GB1064041A
(en)
1963-03-29
1964-03-29
Improvements in or relating to methods of manufacturing semiconductor devices
GB7583/64A
Expired
GB1065951A
(en)
1963-03-29
1964-03-29
Improvements in or relating to methods of manufacturing semiconductor devices
Family Applications After (1)
Application Number
Title
Priority Date
Filing Date
GB7583/64A
Expired
GB1065951A
(en)
1963-03-29
1964-03-29
Improvements in or relating to methods of manufacturing semiconductor devices
Country Status (5)
Country
Link
US
(2)
US3333997A
(en)
BE
(2)
BE643481A
(en)
DE
(2)
DE1270694B
(en)
GB
(2)
GB1064041A
(en)
NL
(2)
NL298354A
(en)
Families Citing this family (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE1274245B
(en)
*
1965-06-15
1968-08-01
Siemens Ag
Semiconductor rectifier diode for heavy current
US3534231A
(en)
*
1968-02-15
1970-10-13
Texas Instruments Inc
Low bulk leakage current avalanche photodiode
Family Cites Families (10)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL94467C
(en)
*
1954-02-27
DE1036393B
(en)
*
1954-08-05
1958-08-14
Siemens Ag
Process for the production of two p-n junctions in semiconductor bodies, e.g. B. area transistors
NL110588C
(en)
*
1955-03-10
DE1058632B
(en)
*
1955-12-03
1959-06-04
Deutsche Bundespost
Method for the arbitrary reduction of the blocking resistance of an alloy electrode of semiconductor arrangements
US2836523A
(en)
*
1956-08-02
1958-05-27
Bell Telephone Labor Inc
Manufacture of semiconductive devices
AT204604B
(en)
*
1956-08-10
1959-08-10
Philips Nv
Process for producing a semiconducting storage layer system and a semiconducting barrier layer system
BE560901A
(en)
*
1956-10-01
US2974072A
(en)
*
1958-06-27
1961-03-07
Ibm
Semiconductor connection fabrication
US3165429A
(en)
*
1962-01-31
1965-01-12
Westinghouse Electric Corp
Method of making a diffused base transistor
NL298286A
(en)
*
1962-09-24
0
NL
NL290930D
patent/NL290930A/xx
unknown
NL
NL298354D
patent/NL298354A/xx
unknown
1964
1964-02-06
BE
BE643481A
patent/BE643481A/xx
unknown
1964-02-06
BE
BE643479A
patent/BE643479A/xx
unknown
1964-02-07
DE
DEP1270A
patent/DE1270694B/en
active
Pending
1964-02-07
DE
DEN24408A
patent/DE1297235B/en
active
Pending
1964-02-20
US
US346191A
patent/US3333997A/en
not_active
Expired – Lifetime
1964-02-20
US
US346162A
patent/US3323955A/en
not_active
Expired – Lifetime
1964-03-29
GB
GB7585/64A
patent/GB1064041A/en
not_active
Expired
1964-03-29
GB
GB7583/64A
patent/GB1065951A/en
not_active
Expired
Also Published As
Publication number
Publication date
US3323955A
(en)
1967-06-06
US3333997A
(en)
1967-08-01
NL290930A
(en)
GB1065951A
(en)
1967-04-19
BE643479A
(en)
1964-08-06
NL298354A
(en)
DE1270694B
(en)
1968-06-20
DE1297235B
(en)
1969-06-12
BE643481A
(en)
1964-08-06
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None