GB1064316A – Improvements in or relating to the production of semiconductor material
– Google Patents
GB1064316A – Improvements in or relating to the production of semiconductor material
– Google Patents
Improvements in or relating to the production of semiconductor material
Info
Publication number
GB1064316A
GB1064316A
GB1225564A
GB1225564A
GB1064316A
GB 1064316 A
GB1064316 A
GB 1064316A
GB 1225564 A
GB1225564 A
GB 1225564A
GB 1225564 A
GB1225564 A
GB 1225564A
GB 1064316 A
GB1064316 A
GB 1064316A
Authority
GB
United Kingdom
Prior art keywords
heated
chamber
semi
conductor material
temperature
Prior art date
1963-03-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1225564A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-03-23
Filing date
1964-03-23
Publication date
1967-04-05
1964-03-23
Application filed by Siemens Schuckertwerke AG, Siemens AG
filed
Critical
Siemens Schuckertwerke AG
1967-04-05
Publication of GB1064316A
publication
Critical
patent/GB1064316A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
Abstract
In the production of ultra-pure semi-conductor material by deposition of the semi-conductor material from a gaseous mixture, which mixture includes a gaseous compound of the semi-conductor material, upon an electrically heated support consisting of a semi-conductor material disposed in a reaction chamber isolated from the ambient atmosphere, the chamber is heated, before the support is introduced therein, whilst filled with hydrogen, nitrogen, a noble gas (for example helium or argon), or chlorine, bromine or iodine gas or vapour, or gaseous hydrogen chloride, hydrogen bromide or hydrogen iodide, to a temperature which is at least as high as the temperature at which the support becomes electrically conductive. The gas or vapour preferably is conductive. passed through the chamber whilst the latter is being heated, for example to a temperature of from 200 DEG C. to 400 DEG C. After the chamber has been heated, which heating may be by radiation, the support is introduced into the chamber and is heated to its conducting temperature. The reaction chamber may take the general form disclosed in Specification 861,135.ALSO:In the production of ultra-pure semi-conductor material by deposition of the semi-conductor material from a gaseous mixture, which mixture includes a gaseous compound of the semi-conductor material, upon an electrically heated support consisting of a semi-conductor material disposed in a reaction chamber isolated from the ambient atmosphere, the chamber is heated, before the support is introduced therein, whilst filled with hydrogen, nitrogen, a noble gas (for example helium or argon), or chlorine, bromine or iodine gas or vapour, or gaseous hydrogen chloride, hydrogen bromide or hydrogen iodide, to a temperature which is at least as high as the temperature at which the support becomes electrically conductive. The gas or vapour preferably is continuously passed through the chamber whilst the latter is being heated, for example to a temperature of from 200 DEG C. to 400 DEG C. After the chamber has been heated, which heating may be by radiation, the support is introduced into the chamber and is heated to its conducting temperature. The actual production of semi-conductor material may involve deposition of silicon from a gaseous mixture comprising hydrogen and silicontetrachloride or silicochloroform. The reaction chamber may take the general form disclosed in Specification 861,135.
GB1225564A
1963-03-23
1964-03-23
Improvements in or relating to the production of semiconductor material
Expired
GB1064316A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE1963S0084331
DE1240818B
(en)
1963-03-23
1963-03-23
Process for producing high-purity semiconductor material by deposition from the gas phase
Publications (1)
Publication Number
Publication Date
GB1064316A
true
GB1064316A
(en)
1967-04-05
Family
ID=7511633
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1225564A
Expired
GB1064316A
(en)
1963-03-23
1964-03-23
Improvements in or relating to the production of semiconductor material
Country Status (3)
Country
Link
CH
(1)
CH434214A
(en)
DE
(1)
DE1240818B
(en)
GB
(1)
GB1064316A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2465791A1
(en)
*
1979-09-20
1981-03-27
Philips Nv
PROCESS FOR CLEANING A REACTOR
1963
1963-03-23
DE
DE1963S0084331
patent/DE1240818B/en
active
Pending
1963-09-16
CH
CH1142663A
patent/CH434214A/en
unknown
1964
1964-03-23
GB
GB1225564A
patent/GB1064316A/en
not_active
Expired
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2465791A1
(en)
*
1979-09-20
1981-03-27
Philips Nv
PROCESS FOR CLEANING A REACTOR
Also Published As
Publication number
Publication date
CH434214A
(en)
1967-04-30
DE1240818B
(en)
1967-05-24
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