GB1081509A – Transistor
– Google Patents
GB1081509A – Transistor
– Google Patents
Transistor
Info
Publication number
GB1081509A
GB1081509A
GB1556066A
GB1556066A
GB1081509A
GB 1081509 A
GB1081509 A
GB 1081509A
GB 1556066 A
GB1556066 A
GB 1556066A
GB 1556066 A
GB1556066 A
GB 1556066A
GB 1081509 A
GB1081509 A
GB 1081509A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
wafer
regions
april
Prior art date
1965-04-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1556066A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-04-07
Filing date
1966-04-07
Publication date
1967-08-31
1966-04-07
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc
filed
Critical
Deutsche ITT Industries GmbH
1967-08-31
Publication of GB1081509A
publication
Critical
patent/GB1081509A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
2
229910052710
silicon
Inorganic materials
0.000
abstract
2
239000010703
silicon
Substances
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound
[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
1
238000005275
alloying
Methods
0.000
abstract
1
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1
229910052782
aluminium
Inorganic materials
0.000
abstract
1
239000004411
aluminium
Substances
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
230000006835
compression
Effects
0.000
abstract
1
238000007906
compression
Methods
0.000
abstract
1
230000003247
decreasing effect
Effects
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
238000001704
evaporation
Methods
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
230000000873
masking effect
Effects
0.000
abstract
1
238000005259
measurement
Methods
0.000
abstract
1
229910052698
phosphorus
Inorganic materials
0.000
abstract
1
239000011574
phosphorus
Substances
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
235000012239
silicon dioxide
Nutrition
0.000
abstract
1
239000000377
silicon dioxide
Substances
0.000
abstract
1
239000000758
substrate
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1,081,509. Semi-conductor devices. ITT INDUSTRIES Inc. April 7, 1966 [April 7, 1965], No. 15560/66. Heading H1K. As shown, Fig. 1, a planar transistor comprises a square die 1 with a square base region 2 and an emitter region (enclosed by line 5) which includes two series of fingers extending at right-angles, the fingers of each series being of successively decreasing lengths. A plurality of such transistors are produced in a wafer of N-type silicon comprising a high resistivity epitaxial layer formed on a low resistivity substrate, by diffusing in boron and phosphorus, using silicon dioxide masks, to form the base and emitter regions. Emitter and base electrodes 3, 4 are formed by exposing the base and emitter regions, evaporating a layer of aluminium on to the surface, masking and etching and then alloying the electrodes to the silicon. The wafer is then diced and emitter and base leads are connected to areas 3a, 4a by compression bonding balls formed on the ends of the leads. During production strip like regions may be diffused into the wafer between the devices, Fig. 2 (not shown), to allow measurements to be made, and to aid mask alignment. Reference has been directed by the Comptroller to Specification 993,388.
GB1556066A
1965-04-07
1966-04-07
Transistor
Expired
GB1081509A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DEST023639
1965-04-07
Publications (1)
Publication Number
Publication Date
GB1081509A
true
GB1081509A
(en)
1967-08-31
Family
ID=7459815
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1556066A
Expired
GB1081509A
(en)
1965-04-07
1966-04-07
Transistor
Country Status (1)
Country
Link
GB
(1)
GB1081509A
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2822166A1
(en)
*
1977-05-25
1978-11-30
Philips Nv
SEMI-CONDUCTOR ARRANGEMENT
CN103872105A
(en)
*
2014-04-04
2014-06-18
石家庄天林石无二电子有限公司
Reinforced bipolar transistor resistant to radiation and method for preparing reinforced bipolar transistor resistant to radiation
1966
1966-04-07
GB
GB1556066A
patent/GB1081509A/en
not_active
Expired
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2822166A1
(en)
*
1977-05-25
1978-11-30
Philips Nv
SEMI-CONDUCTOR ARRANGEMENT
CN103872105A
(en)
*
2014-04-04
2014-06-18
石家庄天林石无二电子有限公司
Reinforced bipolar transistor resistant to radiation and method for preparing reinforced bipolar transistor resistant to radiation
CN103872105B
(en)
*
2014-04-04
2016-09-14
石家庄天林石无二电子有限公司
A kind of preparation method of radiation hardened bipolar transistor
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