GB1136218A – Improvements in or relating to the manufacture of semiconductor optical devices
– Google Patents
GB1136218A – Improvements in or relating to the manufacture of semiconductor optical devices
– Google Patents
Improvements in or relating to the manufacture of semiconductor optical devices
Info
Publication number
GB1136218A
GB1136218A
GB52993/65A
GB5299365A
GB1136218A
GB 1136218 A
GB1136218 A
GB 1136218A
GB 52993/65 A
GB52993/65 A
GB 52993/65A
GB 5299365 A
GB5299365 A
GB 5299365A
GB 1136218 A
GB1136218 A
GB 1136218A
Authority
GB
United Kingdom
Prior art keywords
layer
inorganic compound
light emitting
gallium arsenide
inorganic
Prior art date
1965-12-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52993/65A
Inventor
Henley Frank Sterling
Christ Opher David Dobson
Richard Charles George Swann
Peter Richard Selway
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-12-14
Filing date
1965-12-14
Publication date
1968-12-11
1964-05-08
Priority to GB19219/64A
priority
Critical
patent/GB1104935A/en
1965-05-03
Priority to US452487A
priority
patent/US3485666A/en
1965-05-05
Priority to SE5871/65A
priority
patent/SE322391B/xx
1965-05-06
Priority to DE19651521553
priority
patent/DE1521553B2/en
1965-05-06
Priority to BE663511D
priority
patent/BE663511A/xx
1965-05-06
Priority to FR16070A
priority
patent/FR1442502A/en
1965-05-10
Priority to NL6505915A
priority
patent/NL6505915A/xx
1965-11-02
Priority to GB46289/65A
priority
patent/GB1149052A/en
1965-12-14
Application filed by Standard Telephone and Cables PLC
filed
Critical
Standard Telephone and Cables PLC
1965-12-14
Priority to GB52993/65A
priority
patent/GB1136218A/en
1966-11-02
Priority to FR82178A
priority
patent/FR91083E/en
1966-12-03
Priority to DE1966D0051706
priority
patent/DE1521216A1/en
1966-12-13
Priority to BE691101D
priority
patent/BE691101A/xx
1966-12-13
Priority to NL6617540A
priority
patent/NL6617540A/xx
1966-12-14
Priority to FR87413A
priority
patent/FR91559E/en
1968-12-11
Publication of GB1136218A
publication
Critical
patent/GB1136218A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
230000003287
optical effect
Effects
0.000
title
abstract
4
239000004065
semiconductor
Substances
0.000
title
abstract
2
238000004519
manufacturing process
Methods
0.000
title
1
229910010272
inorganic material
Inorganic materials
0.000
abstract
9
150000002484
inorganic compounds
Chemical class
0.000
abstract
7
239000010410
layer
Substances
0.000
abstract
7
238000000576
coating method
Methods
0.000
abstract
5
JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound
[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
abstract
4
229910001218
Gallium arsenide
Inorganic materials
0.000
abstract
4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
4
229910052581
Si3N4
Inorganic materials
0.000
abstract
2
239000011248
coating agent
Substances
0.000
abstract
2
239000011147
inorganic material
Substances
0.000
abstract
2
239000000377
silicon dioxide
Substances
0.000
abstract
2
HQVNEWCFYHHQES-UHFFFAOYSA-N
silicon nitride
Chemical compound
N12[Si]34N5[Si]62N3[Si]51N64
HQVNEWCFYHHQES-UHFFFAOYSA-N
0.000
abstract
2
RYGMFSIKBFXOCR-UHFFFAOYSA-N
Copper
Chemical compound
[Cu]
RYGMFSIKBFXOCR-UHFFFAOYSA-N
0.000
abstract
1
GWEVSGVZZGPLCZ-UHFFFAOYSA-N
Titan oxide
Chemical compound
O=[Ti]=O
GWEVSGVZZGPLCZ-UHFFFAOYSA-N
0.000
abstract
1
230000015572
biosynthetic process
Effects
0.000
abstract
1
150000001875
compounds
Chemical class
0.000
abstract
1
239000000470
constituent
Substances
0.000
abstract
1
229910052802
copper
Inorganic materials
0.000
abstract
1
239000010949
copper
Substances
0.000
abstract
1
239000011521
glass
Substances
0.000
abstract
1
229910052738
indium
Inorganic materials
0.000
abstract
1
APFVFJFRJDLVQX-UHFFFAOYSA-N
indium atom
Chemical compound
[In]
APFVFJFRJDLVQX-UHFFFAOYSA-N
0.000
abstract
1
229910052751
metal
Inorganic materials
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
239000002356
single layer
Substances
0.000
abstract
1
238000001228
spectrum
Methods
0.000
abstract
1
239000007858
starting material
Substances
0.000
abstract
1
239000000126
substance
Substances
0.000
abstract
1
OGIDPMRJRNCKJF-UHFFFAOYSA-N
titanium oxide
Inorganic materials
[Ti]=O
OGIDPMRJRNCKJF-UHFFFAOYSA-N
0.000
abstract
1
Classifications
C—CHEMISTRY; METALLURGY
C03—GLASS; MINERAL OR SLAG WOOL
C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C14/24—Vacuum evaporation
C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/305—Sulfides, selenides, or tellurides
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
H01J37/32—Gas-filled discharge tubes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
H01J37/32—Gas-filled discharge tubes
H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/293—Organic, e.g. plastic
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/02—Details
H01L31/0216—Coatings
H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/30—Technical effects
H01L2924/301—Electrical effects
H01L2924/3011—Impedance
Abstract
1,136,218. Coatings of inorganic compounds or elements. STANDARD TELEPHONES & CABLES Ltd. 14 Dec., 1965, No. 52993/65. Heading C1A. [Also in Divisions C4, C7 and H1] In a method of providing an anti-reflecting coating on an optical surface of a semi-conductor optical device, the surface is coated with a layer comprising an element or an inorganic compound, the energy necessary to promote the required chemical action for the formation of the layer being provided by establishing a plasma adjacent to the surface in an atmosphere which when the layer comprises an element contains the said element as a compound and which when the layer comprises an inorganic compound contains all the elements of said inorganic compound, all the inorganic compound elements being present in the atmosphere as inorganic materials other than said inorganic compound with at least one of these inorganic materials being an inorganic compound. The optical device may be a light emitting device such as a gallium arsenide light emitting diode or a light receiving device such as a photodiode or photo-cell. The term light includes the visible, ultra-violet and infra-red regions of the spectrum. Fig. 1 shows apparatus for providing silicon nitride anti-reflecting coatings on gallium arsenide light emitting diodes 8 on a support 7 in a glass tube 1. A vacuum pump connected to an outlet 3 reduces the system pressure to OÀ2 torr and SiH 4 and NH 3 are supplied through an inlet 2. An R.F. power source with an output frequency of 4 mc./sec. is connected to a metal mesh which surrounds the tube 1 to produce a plasma. Other coatings (c) which may be provided and the starting materials (m) forming the gaseous atmosphere are The coating may comprise a single layer, a multiple layer or a graded layer, e.g. of silica merging into titanium oxide, e.g. produced by progressively changing the constituents of the gaseous atmosphere. Fig. 3 shows an anti-reflecting silicon nitride layer 18 on a gallium arsenide light emitting diode element comprising a body 14 of N-type gallium arsenide having a P-type region 16, a silica layer 15 and an indium electrode 17, the whole being sandwiched between copper plates 9a, 9b.
GB52993/65A
1964-05-08
1965-12-14
Improvements in or relating to the manufacture of semiconductor optical devices
Expired
GB1136218A
(en)
Priority Applications (14)
Application Number
Priority Date
Filing Date
Title
GB19219/64A
GB1104935A
(en)
1964-05-08
1964-05-08
Improvements in or relating to a method of forming a layer of an inorganic compound
US452487A
US3485666A
(en)
1964-05-08
1965-05-03
Method of forming a silicon nitride coating
SE5871/65A
SE322391B
(en)
1964-05-08
1965-05-05
DE19651521553
DE1521553B2
(en)
1964-05-08
1965-05-06
METHOD OF DEPOSITING LAYERS
BE663511D
BE663511A
(en)
1964-05-08
1965-05-06
FR16070A
FR1442502A
(en)
1964-05-08
1965-05-06
Improvements in diaper formation methods
NL6505915A
NL6505915A
(en)
1964-05-08
1965-05-10
GB46289/65A
GB1149052A
(en)
1964-05-08
1965-11-02
Method of altering the surface properties of polymer material
GB52993/65A
GB1136218A
(en)
1965-12-14
1965-12-14
Improvements in or relating to the manufacture of semiconductor optical devices
FR82178A
FR91083E
(en)
1964-05-08
1966-11-02
Improvements in diaper formation methods
DE1966D0051706
DE1521216A1
(en)
1964-05-08
1966-12-03
Method for depositing an anti-reflective coating on optical components
BE691101D
BE691101A
(en)
1964-05-08
1966-12-13
NL6617540A
NL6617540A
(en)
1964-05-08
1966-12-13
FR87413A
FR91559E
(en)
1964-05-08
1966-12-14
Improvements in diaper formation methods
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB52993/65A
GB1136218A
(en)
1965-12-14
1965-12-14
Improvements in or relating to the manufacture of semiconductor optical devices
Publications (1)
Publication Number
Publication Date
GB1136218A
true
GB1136218A
(en)
1968-12-11
Family
ID=10466194
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB52993/65A
Expired
GB1136218A
(en)
1964-05-08
1965-12-14
Improvements in or relating to the manufacture of semiconductor optical devices
Country Status (1)
Country
Link
GB
(1)
GB1136218A
(en)
Cited By (13)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2251571A1
(en)
*
1971-10-27
1973-05-03
Texas Instruments Inc
METHOD AND DEVICE FOR APPLYING COATINGS TO SUBSTRATES
FR2365813A1
(en)
*
1976-09-27
1978-04-21
American Optical Corp
PROCESS FOR PREPARING A PERFECTED ANTI-REFLECTIVE COATING OF A SYNTHETIC POLYMER LENS
DE3016022A1
(en)
*
1979-04-26
1981-03-26
Optical Coating Laboratory Inc., Santa Rosa, Calif.
METHOD AND DEVICE FOR PRODUCING A THIN, FILM-LIKE COATING BY EVAPORATION USING A ENCLOSED PLASMA SOURCE
EP0127231A1
(en)
*
1983-05-24
1984-12-05
Koninklijke Philips Electronics N.V.
Optical element comprising a transparent substrate and an anti-reflection coating for the near-infrared region of wavelengths
GB2145742A
(en)
*
1983-08-27
1985-04-03
Philips Nv
Method of manufacturing a reaction vessel for crystal growth purposes
GB2199848A
(en)
*
1986-12-24
1988-07-20
Pilkington Plc
Inorganic coatings on glass
EP0301470A2
(en)
*
1987-07-30
1989-02-01
Nukem GmbH
Encapsulation of a photovoltaic element
EP0430041A1
(en)
*
1989-11-22
1991-06-05
Daido Tokushuko Kabushiki Kaisha
Light-emitting diode having light reflecting layer
GB2247691A
(en)
*
1990-08-31
1992-03-11
Glaverbel
Coating glass involving coating with an incompletely oxidized undercoat
EP0585055A1
(en)
*
1992-08-21
1994-03-02
Santa Barbara Research Center
Wideband anti-reflection coating for indium antimonide photodetector device
WO2004100278A2
(en)
2003-04-30
2004-11-18
Cree, Inc.
Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
US8008676B2
(en)
2006-05-26
2011-08-30
Cree, Inc.
Solid state light emitting device and method of making same
EP3428975A1
(en)
2017-07-14
2019-01-16
AGC Glass Europe
Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
1965
1965-12-14
GB
GB52993/65A
patent/GB1136218A/en
not_active
Expired
Cited By (22)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2251571A1
(en)
*
1971-10-27
1973-05-03
Texas Instruments Inc
METHOD AND DEVICE FOR APPLYING COATINGS TO SUBSTRATES
FR2365813A1
(en)
*
1976-09-27
1978-04-21
American Optical Corp
PROCESS FOR PREPARING A PERFECTED ANTI-REFLECTIVE COATING OF A SYNTHETIC POLYMER LENS
DE3016022A1
(en)
*
1979-04-26
1981-03-26
Optical Coating Laboratory Inc., Santa Rosa, Calif.
METHOD AND DEVICE FOR PRODUCING A THIN, FILM-LIKE COATING BY EVAPORATION USING A ENCLOSED PLASMA SOURCE
EP0127231A1
(en)
*
1983-05-24
1984-12-05
Koninklijke Philips Electronics N.V.
Optical element comprising a transparent substrate and an anti-reflection coating for the near-infrared region of wavelengths
GB2145742A
(en)
*
1983-08-27
1985-04-03
Philips Nv
Method of manufacturing a reaction vessel for crystal growth purposes
GB2199848A
(en)
*
1986-12-24
1988-07-20
Pilkington Plc
Inorganic coatings on glass
US4828880A
(en)
*
1986-12-24
1989-05-09
Pilkington Plc
Coatings on glass
GB2199848B
(en)
*
1986-12-24
1991-05-15
Pilkington Plc
Coatings on glass
EP0301470A2
(en)
*
1987-07-30
1989-02-01
Nukem GmbH
Encapsulation of a photovoltaic element
EP0301470A3
(en)
*
1987-07-30
1990-03-21
Nukem Gmbh
Encapsulation of a photovoltaic element
EP0430041A1
(en)
*
1989-11-22
1991-06-05
Daido Tokushuko Kabushiki Kaisha
Light-emitting diode having light reflecting layer
US5132750A
(en)
*
1989-11-22
1992-07-21
Daido Tokushuko Kabushiki Kaisha
Light-emitting diode having light reflecting layer
GB2247691A
(en)
*
1990-08-31
1992-03-11
Glaverbel
Coating glass involving coating with an incompletely oxidized undercoat
US5203903A
(en)
*
1990-08-31
1993-04-20
Glaverbel
Method of coating glass
GB2247691B
(en)
*
1990-08-31
1994-11-23
Glaverbel
Method of coating glass
EP0585055A1
(en)
*
1992-08-21
1994-03-02
Santa Barbara Research Center
Wideband anti-reflection coating for indium antimonide photodetector device
WO2004100278A2
(en)
2003-04-30
2004-11-18
Cree, Inc.
Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
WO2004100278A3
(en)
*
2003-04-30
2005-03-17
Cree Inc
Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
US7087936B2
(en)
2003-04-30
2006-08-08
Cree, Inc.
Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US8008676B2
(en)
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