GB1137732A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1137732A – Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
– Google Patents

GB1137732A – Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
– Google Patents
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers

Info

Publication number
GB1137732A

GB1137732A
GB5949/66A
GB594966A
GB1137732A
GB 1137732 A
GB1137732 A
GB 1137732A
GB 5949/66 A
GB5949/66 A
GB 5949/66A
GB 594966 A
GB594966 A
GB 594966A
GB 1137732 A
GB1137732 A
GB 1137732A
Authority
GB
United Kingdom
Prior art keywords
tantalum
screens
rod
heater
ruby
Prior art date
1965-02-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB5949/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU

Original Assignee
Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-02-10
Filing date
1966-02-10
Publication date
1968-12-27

1965-02-10
Priority claimed from FR5078A
external-priority
patent/FR1432731A/en

1966-01-11
Priority claimed from FR45551A
external-priority
patent/FR89503E/en

1966-02-10
Application filed by Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
filed
Critical
Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU

1968-12-27
Publication of GB1137732A
publication
Critical
patent/GB1137732A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

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Classifications

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt

C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation

C30B11/10—Solid or liquid components, e.g. Verneuil method

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

Y10T117/10—Apparatus

Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]

Abstract

1,137,732. Crystallizing ruby. SOCIETE D’ELECTRO-CHIMIE, D’ELECTRO METALLURGIE ET DES ACIERIES ELECTRIQUES D’UGINE. 10 Feb., 1966 [10 Feb., 1965; 11 Jan., 1966], No. 5949/66. Heading B1S. In a process of crystallization e.g. of ruby, by withdrawing a monocrystalline rod downwards from a molten zone which is replenished from above, the process is effected in a watercooled chamber 1 having a controlled atmosphere, observation window and fusion and cooling chambers which are separated by a thermal screen 9 and are surrounded at the sides and from above by a plurality of thermal screens 11 and 12. The screens may be of tantalum, molybdenum or tungsten. Further control is effected by supplying resistance heafing to the walls of the cooling chamber, which may be of tantalum. The fusion chamber contains a resistance heater 7 in the form of a hollow truncated cone which may be of tantalum or tungsten. In a modification, the heater may be in the form of a spiral. The feed material is fed through orifices in screens 12 and heater 7 to the molten zone which is situated at the tip of a rod 4 which is withdrawn through an orifice in screen 9. Feed material in the form of spheres having a diameter of 0.1-2 mm -may be fed individually from a supply in a cap 34 by means of a rotary device (Fig. 4, not-shown) through a preheating device situated in the orifices of screens 12. The preheating device may provide a zig-zag (Fig. 4, not shown) or spiral (Fig. 5, not shown) path for the spheres. In a modification (Fig. 6, not shown), a feed rod 82 and holder 80 are passed through an orifice in cap 34 and a tube 70 of molybdenum or tantalum having a restriction 72 for centering rod 82.

GB5949/66A
1965-02-10
1966-02-10
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers

Expired

GB1137732A
(en)

Applications Claiming Priority (2)

Application Number
Priority Date
Filing Date
Title

FR5078A

FR1432731A
(en)

1965-02-10
1965-02-10

Method and device for manufacturing synthetic ruby, in particular for lasers

FR45551A

FR89503E
(en)

1966-01-11
1966-01-11

Method and device for manufacturing synthetic ruby, in particular for lasers

Publications (1)

Publication Number
Publication Date

GB1137732A
true

GB1137732A
(en)

1968-12-27

Family
ID=26161954
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB5949/66A
Expired

GB1137732A
(en)

1965-02-10
1966-02-10
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers

Country Status (7)

Country
Link

US
(1)

US3519394A
(en)

JP
(1)

JPS5113751B1
(en)

BE
(1)

BE676042A
(en)

CH
(1)

CH457373A
(en)

DE
(1)

DE1544278B2
(en)

GB
(1)

GB1137732A
(en)

NL
(1)

NL6601707A
(en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3798007A
(en)

1969-12-05
1974-03-19
Ibm
Method and apparatus for producing large diameter monocrystals

DE2542886B2
(en)

1975-09-25
1978-09-21
Siemens Ag, 1000 Berlin Und 8000 Muenchen

Device for powder delivery during crystal growth according to Verneuil

JPS62128309U
(en)

1986-02-07
1987-08-14

US5665011A
(en)

1996-11-22
1997-09-09
Thomas; Robert
Golf putter head

Family Cites Families (15)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US1653022A
(en)

1924-07-12
1927-12-20
Westinghouse Electric & Mfg Co
Apparatus for the production of artificial jewels or precious stones

US2525261A
(en)

1946-09-30
1950-10-10
James P Henderson
Refrigerated ball dispenser

US2690062A
(en)

1949-12-21
1954-09-28
Union Carbide & Carbon Corp
Synthetic corundum crystals and process for making same

GB697419A
(en)

1951-07-13
1953-09-23
Gen Electric Co Ltd
Improvements in or relating to apparatus for manufacturing synthetic jewels

DE1188042B
(en)

1954-01-29
1965-03-04
Siemens Ag

Device for crucible zone melting of a rod-shaped crystalline semiconductor body

DE1017795B
(en)

1954-05-25
1957-10-17
Siemens Ag

Process for the production of the purest crystalline substances, preferably semiconductor substances

US3173765A
(en)

1955-03-18
1965-03-16
Itt
Method of making crystalline silicon semiconductor material

US2792287A
(en)

1956-04-04
1957-05-14
Nat Lead Co
Synthetic rutile crystal and method for making same

US2879189A
(en)

1956-11-21
1959-03-24
Shockley William
Method for growing junction semi-conductive devices

US2965456A
(en)

1956-12-31
1960-12-20
Union Carbide Corp
Process for crystalline growth employing collimated electrical energy

US3086850A
(en)

1959-06-17
1963-04-23
Itt
Method and means for growing and treating crystals

US3154384A
(en)

1960-04-13
1964-10-27
Texas Instruments Inc
Apparatus for growing compound semiconductor crystal

DE1188555B
(en)

1960-05-10
1965-03-11
Wacker Chemie Gmbh

Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table

US3342559A
(en)

1964-04-27
1967-09-19
Westinghouse Electric Corp
Apparatus for producing dendrites

US3337303A
(en)

1965-03-01
1967-08-22
Elmat Corp
Crystal growing apparatus

1966

1966-02-04
BE
BE676042D
patent/BE676042A/xx
unknown

1966-02-08
DE
DE1966S0101889
patent/DE1544278B2/en
active
Granted

1966-02-10
CH
CH187866A
patent/CH457373A/en
unknown

1966-02-10
JP
JP41007928A
patent/JPS5113751B1/ja
active
Pending

1966-02-10
GB
GB5949/66A
patent/GB1137732A/en
not_active
Expired

1966-02-10
NL
NL6601707A
patent/NL6601707A/xx
unknown

1967

1967-01-09
US
US615287A
patent/US3519394A/en
not_active
Expired – Lifetime

Also Published As

Publication number
Publication date

DE1544278B2
(en)

1976-04-29

NL6601707A
(en)

1966-08-11

JPS5113751B1
(en)

1976-05-01

CH457373A
(en)

1968-06-15

US3519394A
(en)

1970-07-07

BE676042A
(en)

1966-06-16

DE1544278A1
(en)

1970-05-21

Información de contacto