GB1147015A – Semiconductor devices
– Google Patents
GB1147015A – Semiconductor devices
– Google Patents
Semiconductor devices
Info
Publication number
GB1147015A
GB1147015A
GB2691/68A
GB269168A
GB1147015A
GB 1147015 A
GB1147015 A
GB 1147015A
GB 2691/68 A
GB2691/68 A
GB 2691/68A
GB 269168 A
GB269168 A
GB 269168A
GB 1147015 A
GB1147015 A
GB 1147015A
Authority
GB
United Kingdom
Prior art keywords
wafer
layer
produced
aluminium
electrode
Prior art date
1967-01-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2691/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-01-26
Filing date
1968-01-18
Publication date
1969-04-02
1968-01-18
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc
filed
Critical
Deutsche ITT Industries GmbH
1969-04-02
Publication of GB1147015A
publication
Critical
patent/GB1147015A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/965—Shaped junction formation
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/983—Zener diodes
Abstract
1,147,015. Semi-conductor devices. ITT INDUSTRIES Inc. 18 Jan., 1968 [26 Jan., 1967], No. 2691/68. Heading H1K. A Zener diode is produced by alloying doping material to a wafer through a surface zone produced by the planar process. The alloying step is performed in a temperature gradient in which the temperature increases towards the inside of the wafer. As shown, a P-type region 6 is produced in a wafer of N-type silicon 1 by the planar process using an oxide mask 4. A layer of aluminium is evaporated on to the surface, photomasked, and etched to leave an area 2. The wafer is then mounted on a graphite heating plate in a water cooled quartz reactor containing an inert gas and the aluminium is alloyed through region 6 to produce P + type region 5. The electrode is strengthened by evaporating on a layer of aluminium followed by a layer of silver using the same mask and without breaking the vacuum. The silver layer is tempered and the electrode is thickened by electroless plating. A plurality of such diodes are simultaneously produced in a single wafer which is then subdivided, the individual divider being mounted in a sleeve or envelope with a pressure contact applied to the strengthened electrode. Reference has been directed by the Comptroller to Specifications 1,023,579 and 1,052,673.
GB2691/68A
1967-01-26
1968-01-18
Semiconductor devices
Expired
GB1147015A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DED52101A
DE1300164B
(en)
1967-01-26
1967-01-26
Method for manufacturing Zener diodes
Publications (1)
Publication Number
Publication Date
GB1147015A
true
GB1147015A
(en)
1969-04-02
Family
ID=7053905
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2691/68A
Expired
GB1147015A
(en)
1967-01-26
1968-01-18
Semiconductor devices
Country Status (4)
Country
Link
US
(1)
US3544397A
(en)
DE
(1)
DE1300164B
(en)
FR
(1)
FR1553289A
(en)
GB
(1)
GB1147015A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4142200A
(en)
*
1975-10-27
1979-02-27
Nippon Telegraph & Telephone Corp.
Semiconductor photodiodes
Families Citing this family (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS4822374B1
(en)
*
1968-10-17
1973-07-05
US3881179A
(en)
*
1972-08-23
1975-04-29
Motorola Inc
Zener diode structure having three terminals
US3988757A
(en)
*
1973-10-30
1976-10-26
General Electric Company
Deep diode zeners
US3988770A
(en)
*
1973-12-14
1976-10-26
General Electric Company
Deep finger diodes
DE2916114A1
(en)
*
1978-04-21
1979-10-31
Hitachi Ltd
SEMI-CONDUCTOR DEVICE
Family Cites Families (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2813048A
(en)
*
1954-06-24
1957-11-12
Bell Telephone Labor Inc
Temperature gradient zone-melting
NL121810C
(en)
*
1955-11-04
NL237230A
(en)
*
1958-03-19
FR84496E
(en)
*
1963-02-15
1965-02-19
Intermetall Ges Fur Metallurg
Method for establishing a pn passage in a semiconductor body and semiconductor elements conforming to those thus obtained
FR1372145A
(en)
*
1963-02-15
1964-09-11
Intermetall
Method for establishing a p-n passage in a semiconductor body and semiconductor elements conforming to those thus obtained
US3457469A
(en)
*
1965-11-15
1969-07-22
Motorola Inc
Noise diode having an alloy zener junction
1967
1967-01-26
DE
DED52101A
patent/DE1300164B/en
active
Pending
1968
1968-01-04
US
US695747A
patent/US3544397A/en
not_active
Expired – Lifetime
1968-01-18
GB
GB2691/68A
patent/GB1147015A/en
not_active
Expired
1968-01-25
FR
FR1553289D
patent/FR1553289A/fr
not_active
Expired
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4142200A
(en)
*
1975-10-27
1979-02-27
Nippon Telegraph & Telephone Corp.
Semiconductor photodiodes
Also Published As
Publication number
Publication date
DE1300164B
(en)
1969-07-31
US3544397A
(en)
1970-12-01
FR1553289A
(en)
1969-01-10
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