GB1197154A – High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
– Google Patents
GB1197154A – High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
– Google Patents
High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
Info
Publication number
GB1197154A
GB1197154A
GB15764/69A
GB1576469A
GB1197154A
GB 1197154 A
GB1197154 A
GB 1197154A
GB 15764/69 A
GB15764/69 A
GB 15764/69A
GB 1576469 A
GB1576469 A
GB 1576469A
GB 1197154 A
GB1197154 A
GB 1197154A
Authority
GB
United Kingdom
Prior art keywords
type
igfet
substrate
gate
diodes
Prior art date
1968-04-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15764/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-04-10
Filing date
1969-03-26
Publication date
1970-07-01
1969-03-26
Application filed by RCA Corp
filed
Critical
RCA Corp
1970-07-01
Publication of GB1197154A
publication
Critical
patent/GB1197154A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/0203—Particular design considerations for integrated circuits
H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03F—AMPLIFIERS
H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
H03F1/52—Circuit arrangements for protecting such amplifiers
H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
Abstract
1,197,154. Semi-conductor devices. B.C.A. CORPORATION. 26 March, 1969 [10 April, 1968], No. 15764/69. Heading H1K. The gate insulation of an IGFET is protected from overvoltages by means of a pair of back-toback diodes connected between the gate and the substrate, the diodes being formed in the same substrate as the IGFET. The use of back-toback diodes provides protection against both positive and negative overvoltages. The device is formed in a P-type substrate 40 and the IGFET comprises N + type source and drain contact regions (44, 48) from which extend N-type source and drain regions (46, 50) the gap between which is covered by the metal gate electrode (21) on top of a thin part (59) of the insulating (SiO 2 ) surface layer (53), Figs. 2 and 3 (not shown). As shown, Fig. 4, the protective diodes comprise P + type regions 66, 68 formed in an N-type inclusion 62 the spacing between the junctions being sufficient to prevent transistor action. Diode region 68 is contacted by a metal area 60 which also forms the bonding pad for the IGFET gate electrode (21). The diode region 66 is connected to the substrate 40 by a conductive track 72 via a P + type contact region 64 which is of annular configuration and surrounds the N-type inclusion 62 to prevent FET action under the gate bonding pad between region 62 and the active N-type regions of the IGFET. The device may be produced using conventional diffusion and photolithographic masking techniques. If the IGFET is provided with two gate electrodes both may be protected by back-toback diode arrangements which can be formed under their respective gate bonding pads. The IGFET may also be of the P channel type using and N-type substrate provided that the N-type diode inclusion is isolated from the substrate, for example by a surrounding P-type region. Diodes comprising N + type regions in a P-type inclusion may be similarly used with both P and N channel IGFETs.
GB15764/69A
1968-04-10
1969-03-26
High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
Expired
GB1197154A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US72012868A
1968-04-10
1968-04-10
Publications (1)
Publication Number
Publication Date
GB1197154A
true
GB1197154A
(en)
1970-07-01
Family
ID=24892770
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB15764/69A
Expired
GB1197154A
(en)
1968-04-10
1969-03-26
High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
Country Status (7)
Country
Link
US
(1)
US3512058A
(en)
JP
(1)
JPS549030B1
(en)
DE
(1)
DE1918222C3
(en)
FR
(1)
FR2005929A1
(en)
GB
(1)
GB1197154A
(en)
MY
(1)
MY7300388A
(en)
NL
(1)
NL163676C
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2182490A
(en)
*
1985-10-29
1987-05-13
Sgs Microelettronica Spa
Semiconductor device for protecting integrated circuits against electrostatic discharges
GB2274203A
(en)
*
1993-01-07
1994-07-13
Seiko Epson Corp
Semiconductor device protection
Families Citing this family (25)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4044373A
(en)
*
1967-11-13
1977-08-23
Hitachi, Ltd.
IGFET with gate protection diode and antiparasitic isolation means
NL162792C
(en)
*
1969-03-01
1980-06-16
Philips Nv
FIELD EFFECT TRANSISTOR WITH INSULATED STEERING ELECTRODE CONNECTED WITH AT LEAST A PN TRANSITION WITH A SECURITY DEAD.
US3631312A
(en)
*
1969-05-15
1971-12-28
Nat Semiconductor Corp
High-voltage mos transistor method and apparatus
US3601625A
(en)
*
1969-06-25
1971-08-24
Texas Instruments Inc
Mosic with protection against voltage surges
NL161924C
(en)
*
1969-07-03
1980-03-17
Philips Nv
FIELD EFFECT TRANSISTOR WITH AT LEAST TWO INSULATED STEERING ELECTRODES.
JPS4836598B1
(en)
*
1969-09-05
1973-11-06
JPS5115394B1
(en)
*
1969-11-20
1976-05-17
US3673427A
(en)
*
1970-02-02
1972-06-27
Electronic Arrays
Input circuit structure for mos integrated circuits
JPS5122794B1
(en)
*
1970-06-24
1976-07-12
US3740620A
(en)
*
1971-06-22
1973-06-19
Ibm
Storage system having heterojunction-homojunction devices
US3806773A
(en)
*
1971-07-17
1974-04-23
Sony Corp
Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
DE2511488A1
(en)
*
1975-03-15
1976-09-23
Bosch Gmbh Robert
CMOS INVERTER
JPS5422781A
(en)
*
1977-07-22
1979-02-20
Hitachi Ltd
Insulator gate protective semiconductor device
US4264857A
(en)
*
1978-06-30
1981-04-28
International Business Machines Corporation
Constant voltage threshold device
US4282556A
(en)
*
1979-05-21
1981-08-04
Rca Corporation
Input protection device for insulated gate field effect transistor
US4609931A
(en)
*
1981-07-17
1986-09-02
Tokyo Shibaura Denki Kabushiki Kaisha
Input protection MOS semiconductor device with zener breakdown mechanism
EP0102696B1
(en)
*
1982-06-30
1989-09-13
Kabushiki Kaisha Toshiba
Dynamic semiconductor memory and manufacturing method thereof
JPS60207383A
(en)
*
1984-03-31
1985-10-18
Toshiba Corp
Semiconductor device
DE3583301D1
(en)
*
1984-03-31
1991-08-01
Toshiba Kawasaki Kk
PROTECTIVE ARRANGEMENT FOR A MOS TRANSISTOR.
US4763184A
(en)
*
1985-04-30
1988-08-09
Waferscale Integration, Inc.
Input circuit for protecting against damage caused by electrostatic discharge
US4760433A
(en)
*
1986-01-31
1988-07-26
Harris Corporation
ESD protection transistors
IT1188398B
(en)
*
1986-02-18
1988-01-07
Sgs Microelettronica Spa
INTEGRATED STRUCTURE FOR PROTECTION AGAINST STATIC DISCHARGES AND A SEMICONDUCTOR DEVICE INCORPORATING THE SAME
IT1226438B
(en)
*
1988-07-05
1991-01-15
Sgs Thomson Microelectronics
ELECTRONIC CIRCUIT WITH DEVICE FOR PROTECTION FROM VOLTAGE VARIATIONS OF THE POWER BATTERY.
JP3318774B2
(en)
*
1992-06-29
2002-08-26
ソニー株式会社
Semiconductor device and solid-state imaging device
DE102005045178B3
(en)
2005-09-21
2006-10-12
Miele & Cie. Kg
Plastics drum assembly, for a front loading horizontal drum washing machine, has a metal hub bonded into the plastics mass with embedded reinforcement fiber strands extending radially from the hub to the end wall
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3278853A
(en)
*
1963-11-21
1966-10-11
Westinghouse Electric Corp
Integrated circuits with field effect transistors and diode bias means
US3403270A
(en)
*
1965-05-10
1968-09-24
Gen Micro Electronics Inc
Overvoltage protective circuit for insulated gate field effect transistor
FR1484322A
(en)
*
1965-06-22
1967-06-09
Philips Nv
Complex semiconductor component
US3469155A
(en)
*
1966-09-23
1969-09-23
Westinghouse Electric Corp
Punch-through means integrated with mos type devices for protection against insulation layer breakdown
1968
1968-04-10
US
US720128A
patent/US3512058A/en
not_active
Expired – Lifetime
1969
1969-03-26
GB
GB15764/69A
patent/GB1197154A/en
not_active
Expired
1969-04-08
FR
FR6910670A
patent/FR2005929A1/en
active
Granted
1969-04-09
JP
JP2759369A
patent/JPS549030B1/ja
active
Pending
1969-04-09
NL
NL6905455.A
patent/NL163676C/en
not_active
IP Right Cessation
1969-04-10
DE
DE1918222A
patent/DE1918222C3/en
not_active
Expired
1973
1973-12-31
MY
MY1973388A
patent/MY7300388A/en
unknown
Cited By (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2182490A
(en)
*
1985-10-29
1987-05-13
Sgs Microelettronica Spa
Semiconductor device for protecting integrated circuits against electrostatic discharges
GB2182490B
(en)
*
1985-10-29
1989-10-11
Sgs Microelettronica Spa
Electronic semiconductor device for protecting integrated circuits against electrostatic discharges and process for the production thereof
GB2274203A
(en)
*
1993-01-07
1994-07-13
Seiko Epson Corp
Semiconductor device protection
GB2274203B
(en)
*
1993-01-07
1996-08-07
Seiko Epson Corp
Semiconductor device
US5614752A
(en)
*
1993-01-07
1997-03-25
Seiko Epson Corporation
Semiconductor device containing external surge protection component
Also Published As
Publication number
Publication date
NL163676C
(en)
1980-09-15
DE1918222B2
(en)
1981-06-19
DE1918222C3
(en)
1982-03-04
MY7300388A
(en)
1973-12-31
JPS549030B1
(en)
1979-04-20
US3512058A
(en)
1970-05-12
DE1918222A1
(en)
1970-02-05
NL163676B
(en)
1980-04-15
FR2005929B1
(en)
1974-09-20
NL6905455A
(en)
1969-10-14
FR2005929A1
(en)
1969-12-19
Similar Documents
Publication
Publication Date
Title
GB1197154A
(en)
1970-07-01
High Voltage Transient Protection for an Insulated Gate Field Effect Transistor
GB1524864A
(en)
1978-09-13
Monolithic semiconductor arrangements
GB1002734A
(en)
1965-08-25
Coupling transistor
ES409423A1
(en)
1975-12-16
Over voltage protection circuit lateral bipolar transistor with gated collector junction
KR860002153A
(en)
1986-03-26
Semiconductor devices
GB1153428A
(en)
1969-05-29
Improvements in Semiconductor Devices.
GB1129200A
(en)
1968-10-02
High frequency field effect transistor
GB1254302A
(en)
1971-11-17
Improvements in insulated gate field effect transistors
GB1301192A
(en)
1972-12-29
Semiconductor controlled rectifier device
GB1339250A
(en)
1973-11-28
Gate protective device for insulated gate field-effect transistors
GB1209271A
(en)
1970-10-21
Improvements in semiconductor devices
GB1099381A
(en)
1968-01-17
Solid state field-effect devices
KR880700466A
(en)
1988-03-15
Static protection integrated circuit
GB1246208A
(en)
1971-09-15
Pn junction gated field effect transistor having buried layer
GB1309049A
(en)
1973-03-07
Integrated circuit with a protective input circuit
GB1322933A
(en)
1973-07-11
Semiconductor device
GB1060208A
(en)
1967-03-01
Avalanche transistor
GB1357553A
(en)
1974-06-26
Insulated-gate field effect transistors
GB949646A
(en)
1964-02-19
Improvements in or relating to semiconductor devices
GB983266A
(en)
1965-02-17
Semiconductor switching devices
GB1073135A
(en)
1967-06-21
Semiconductor current limiter
GB1131675A
(en)
1968-10-23
Semiconductor device
UST964009I4
(en)
1977-11-01
High voltage semiconductor structure
GB1103184A
(en)
1968-02-14
Improvements relating to semiconductor circuits
GB1380466A
(en)
1975-01-15
Gate protective device for insulated gate fieldeffect transistors
Legal Events
Date
Code
Title
Description
1970-11-11
PS
Patent sealed [section 19, patents act 1949]
1982-10-20
PCNP
Patent ceased through non-payment of renewal fee
