GB1222392A – Improvements in and relating to the deposition of silicon nitride films
– Google Patents
GB1222392A – Improvements in and relating to the deposition of silicon nitride films
– Google Patents
Improvements in and relating to the deposition of silicon nitride films
Info
Publication number
GB1222392A
GB1222392A
GB5330/68A
GB533068A
GB1222392A
GB 1222392 A
GB1222392 A
GB 1222392A
GB 5330/68 A
GB5330/68 A
GB 5330/68A
GB 533068 A
GB533068 A
GB 533068A
GB 1222392 A
GB1222392 A
GB 1222392A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
substrate
susceptor
silane
feb
Prior art date
1965-10-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5330/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-10-11
Filing date
1968-02-02
Publication date
1971-02-10
1968-02-02
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1971-02-10
Publication of GB1222392A
publication
Critical
patent/GB1222392A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/34—Nitrides
C23C16/345—Silicon nitride
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Abstract
1,222,392. Silicon nitride. INTERNATIONAL BUSINESS MACHINES CORP. 2 Feb., 1968 [8 Feb., 1967], No. 5330/68. Addition to 1,153,794. Heading C1A. Silicon nitride Si 3 N 4 is deposited on a substrate positioned in a reaction zone by introducing a gaseous mixture of silane and a nitrogen-containing compound, together with a carrier gas, except hydrogen, to retard the reaction rate, to a reaction zone and contacting the substrate at more than 500 C. with the gaseous mixture, to cause pyrolitic deposition of a pin-hole free film of Si 3 N 4 on the surface. The N-containing compound may be NH 3 . The substrate may be a semi-conductor or a susceptor, e.g. Si or graphite, and the carrier gas may be molecular N 2 . The volume ratio of silane to ammonia may be at least stoichiometric (i.e. 3: 4) and may be 1: 300 or more. The reaction chamber may be of quartz, and heating may be actuated by coupling a susceptor with a R.F. power source. The silicon nitride may be deposited over discrete areas of the coated surface by masking the remaining surface.
GB5330/68A
1965-10-11
1968-02-02
Improvements in and relating to the deposition of silicon nitride films
Expired
GB1222392A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US49479065A
1965-10-11
1965-10-11
US62933867A
1967-02-08
1967-02-08
Publications (1)
Publication Number
Publication Date
GB1222392A
true
GB1222392A
(en)
1971-02-10
Family
ID=27051543
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB5330/68A
Expired
GB1222392A
(en)
1965-10-11
1968-02-02
Improvements in and relating to the deposition of silicon nitride films
Country Status (2)
Country
Link
FR
(1)
FR93741E
(en)
GB
(1)
GB1222392A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CZ305576B6
(en)
*
2014-09-25
2015-12-16
Univerzita Karlova v Praze Matematicko- fyzikální fakulta Fyzikální ústav
Process for preparing microporous layers of silicon nitride in quartz ampoules and apparatus for making the same
1968
1968-01-10
FR
FR8962A
patent/FR93741E/en
not_active
Expired
1968-02-02
GB
GB5330/68A
patent/GB1222392A/en
not_active
Expired
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CZ305576B6
(en)
*
2014-09-25
2015-12-16
Univerzita Karlova v Praze Matematicko- fyzikální fakulta Fyzikální ústav
Process for preparing microporous layers of silicon nitride in quartz ampoules and apparatus for making the same
Also Published As
Publication number
Publication date
FR93741E
(en)
1969-05-09
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