GB1226814A – – Google Patents
GB1226814A – – Google Patents
Info
Publication number
GB1226814A
GB1226814A
GB1226814DA
GB1226814A
GB 1226814 A
GB1226814 A
GB 1226814A
GB 1226814D A
GB1226814D A
GB 1226814DA
GB 1226814 A
GB1226814 A
GB 1226814A
Authority
GB
United Kingdom
Prior art keywords
titanium
platinum
photo
oxide
electro
Prior art date
1967-08-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-08-04
Filing date
1968-04-18
Publication date
1971-03-31
1968-04-18
Application filed
filed
Critical
1971-03-31
Publication of GB1226814A
publication
Critical
patent/GB1226814A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L24/02—Bonding areas ; Manufacturing methods related thereto
H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L24/10—Bump connectors ; Manufacturing methods related thereto
H01L24/11—Manufacturing methods
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H01L2224/05001—Internal layers
H01L2224/05099—Material
H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
H01L2224/05166—Titanium [Ti] as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H01L2224/0554—External layer
H01L2224/05599—Material
H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
H01L2224/05669—Platinum [Pt] as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L2224/10—Bump connectors; Manufacturing methods related thereto
H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
H01L2224/13001—Core members of the bump connector
H01L2224/13099—Material
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01015—Phosphorus [P]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01022—Titanium [Ti]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01027—Cobalt [Co]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01033—Arsenic [As]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01072—Hafnium [Hf]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01074—Tungsten [W]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01078—Platinum [Pt]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01079—Gold [Au]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01082—Lead [Pb]
Abstract
1,226,814. 814. Electro-plating gold contacts on semi-conductors. WESTERN ELECTRIC CO. Inc. April 18, 1968 [Aug. 4, 1967], No.18294/68. Heading C7B. [Also in Division H1] In making connection to a metallic layer on a semi-conductor body by electro-plating layers of titanium and titanium dioxide are formed successively on the metallic layer and a photo-resist mask then applied to the oxide to delineate the areas for deposition. In the embodiment apertures are first formed in the oxide layer over the emitter and base regions of a planar diffused transistor. After depositing platinum in the apertures and heating to form platinum silicide, titanium 17 Fig. 3 is deposited overall and keys to the oxide 16. A further layer of platinum 18 is applied followed by an evaporated layer 19 of titanium 400-1000 thick, which is oxidized by exposure to the atmosphere. A photo-resist mask defining the contact areas is then applied and the unmasked titanium oxide and titanium removed by etching in a hydrofluoricsulphuric acid mix. Then, after removing the photo-resist if desired, gold is electro-plated on the exposed platinum. Alternatively the exposed platinum is removed by chemical etching or cathode back-sputtering and the gold plated on the underlying titanium. Finally the photo-resist material is removed and the layers not masked by the gold contacts treated in a mixture of hydrofluoric and sulphuric acids to remove the titanium and in a mixture of hydrochloric and nitric acids to remove the platinum.
GB1226814D
1967-08-04
1968-04-18
Expired
GB1226814A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US65837767A
1967-08-04
1967-08-04
Publications (1)
Publication Number
Publication Date
GB1226814A
true
GB1226814A
(en)
1971-03-31
Family
ID=24641005
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1226814D
Expired
GB1226814A
(en)
1967-08-04
1968-04-18
Country Status (9)
Country
Link
US
(1)
US3507756A
(en)
AT
(1)
AT278906B
(en)
BE
(1)
BE718867A
(en)
CH
(1)
CH482306A
(en)
ES
(1)
ES356784A1
(en)
FR
(1)
FR1578320A
(en)
GB
(1)
GB1226814A
(en)
IL
(1)
IL30464A
(en)
NL
(1)
NL6811007A
(en)
Families Citing this family (15)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3658489A
(en)
*
1968-08-09
1972-04-25
Nippon Electric Co
Laminated electrode for a semiconductor device
US3953266A
(en)
*
1968-11-28
1976-04-27
Toshio Takai
Process for fabricating a semiconductor device
US3620932A
(en)
*
1969-05-05
1971-11-16
Trw Semiconductors Inc
Beam leads and method of fabrication
DE1954499A1
(en)
*
1969-10-29
1971-05-06
Siemens Ag
Process for the production of semiconductor circuits with interconnects
US3634202A
(en)
*
1970-05-19
1972-01-11
Lignes Telegraph Telephon
Process for the production of thick film conductors and circuits incorporating such conductors
US3668484A
(en)
*
1970-10-28
1972-06-06
Rca Corp
Semiconductor device with multi-level metalization and method of making the same
JPS5515874B1
(en)
*
1971-06-08
1980-04-26
FR2209216B1
(en)
*
1972-11-30
1977-09-30
Ibm
US4988412A
(en)
*
1988-12-27
1991-01-29
General Electric Company
Selective electrolytic desposition on conductive and non-conductive substrates
JP3166221B2
(en)
*
1991-07-23
2001-05-14
日本電気株式会社
Semiconductor device and manufacturing method thereof
JP2861629B2
(en)
*
1992-05-27
1999-02-24
日本電気株式会社
Semiconductor device
US5679982A
(en)
*
1993-02-24
1997-10-21
Intel Corporation
Barrier against metal diffusion
EP0877417A1
(en)
*
1997-05-09
1998-11-11
Lucent Technologies Inc.
Method for fabrication of electrodes and other electrically-conductive structures
US6836015B2
(en)
*
2003-05-02
2004-12-28
International Business Machines Corporation
Optical assemblies for transmitting and manipulating optical beams
US6922294B2
(en)
*
2003-05-02
2005-07-26
International Business Machines Corporation
Optical communication assembly
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3287612A
(en)
*
1963-12-17
1966-11-22
Bell Telephone Labor Inc
Semiconductor contacts and protective coatings for planar devices
US3386894A
(en)
*
1964-09-28
1968-06-04
Northern Electric Co
Formation of metallic contacts
US3388048A
(en)
*
1965-12-07
1968-06-11
Bell Telephone Labor Inc
Fabrication of beam lead semiconductor devices
1967
1967-08-04
US
US658377A
patent/US3507756A/en
not_active
Expired – Lifetime
1968
1968-04-18
GB
GB1226814D
patent/GB1226814A/en
not_active
Expired
1968-07-17
ES
ES356784A
patent/ES356784A1/en
not_active
Expired
1968-07-29
IL
IL30464A
patent/IL30464A/en
unknown
1968-07-31
BE
BE718867D
patent/BE718867A/xx
unknown
1968-08-02
FR
FR1578320D
patent/FR1578320A/fr
not_active
Expired
1968-08-02
AT
AT757268A
patent/AT278906B/en
not_active
IP Right Cessation
1968-08-02
NL
NL6811007A
patent/NL6811007A/xx
unknown
1968-08-05
CH
CH1171068A
patent/CH482306A/en
unknown
Also Published As
Publication number
Publication date
FR1578320A
(en)
1969-08-14
CH482306A
(en)
1969-11-30
NL6811007A
(en)
1969-02-06
IL30464A0
(en)
1968-09-26
AT278906B
(en)
1970-02-25
BE718867A
(en)
1968-12-31
IL30464A
(en)
1971-04-28
US3507756A
(en)
1970-04-21
ES356784A1
(en)
1970-02-01
Similar Documents
Publication
Publication Date
Title
GB1226814A
(en)
1971-03-31
GB1319682A
(en)
1973-06-06
Thin film metallization process for microcircuits
US3738880A
(en)
1973-06-12
Method of making a semiconductor device
US3442701A
(en)
1969-05-06
Method of fabricating semiconductor contacts
GB1021359A
(en)
1966-03-02
Improved electrical connection to a semiconductor body
GB1082317A
(en)
1967-09-06
Semiconductor devices and methods of making them
US3994758A
(en)
1976-11-30
Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US3920861A
(en)
1975-11-18
Method of making a semiconductor device
US3634204A
(en)
1972-01-11
Technique for fabrication of semiconductor device
US4160260A
(en)
1979-07-03
Planar semiconductor devices and method of making the same
US3708360A
(en)
1973-01-02
Self-aligned gate field effect transistor with schottky barrier drain and source
GB1193868A
(en)
1970-06-03
Ohmic Contacts for Semiconductor Devices
GB1418969A
(en)
1975-12-24
Method of making integrated circuits
US3708403A
(en)
1973-01-02
Self-aligning electroplating mask
US3244555A
(en)
1966-04-05
Semiconductor devices
GB1453270A
(en)
1976-10-20
Field effect devices
US3541676A
(en)
1970-11-24
Method of forming field-effect transistors utilizing doped insulators as activator source
US3303071A
(en)
1967-02-07
Fabrication of a semiconductive device with closely spaced electrodes
US3641405A
(en)
1972-02-08
Field-effect transistors with superior passivating films and method of making same
US3681153A
(en)
1972-08-01
Process for fabricating small geometry high frequency semiconductor device
US4216573A
(en)
1980-08-12
Three mask process for making field effect transistors
US3698077A
(en)
1972-10-17
Method of producing a planar-transistor
GB1143506A
(en)
1969-02-26
Method of producing semiconductor devices having connecting leads attached thereto
GB1139352A
(en)
1969-01-08
Process for making ohmic contact to a semiconductor substrate
JP2535885B2
(en)
1996-09-18
Schottky barrier diode and manufacturing method thereof
Legal Events
Date
Code
Title
Description
1971-08-11
PS
Patent sealed [section 19, patents act 1949]
1972-11-08
PLNP
Patent lapsed through nonpayment of renewal fees
