GB1229057A – – Google Patents
GB1229057A – – Google Patents
Info
Publication number
GB1229057A
GB1229057A
GB1229057DA
GB1229057A
GB 1229057 A
GB1229057 A
GB 1229057A
GB 1229057D A
GB1229057D A
GB 1229057DA
GB 1229057 A
GB1229057 A
GB 1229057A
Authority
GB
United Kingdom
Prior art keywords
transistor
inverter
rail
electrode
type
Prior art date
1967-04-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-04-26
Filing date
1968-04-26
Publication date
1971-04-21
1968-04-26
Application filed
filed
Critical
1971-04-21
Publication of GB1229057A
publication
Critical
patent/GB1229057A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/085—Isolated-integrated
Abstract
1,229,057. Complementary IGFETs. R.C.A. CORPORATION. 26 April, 1968 [26 April, 1967], No. 19857/68. Heading H1K. [Also in Division H3] The device shown is an integrated thin-film structure comprising P-type and N-type IGFETs forming a complementary pair used in a phase inverting circuit. The first transistor has a source electrode 34, an N-type body 36, a gate electrode 42, and a drain electrode 35. The second transistor shares the drain electrode 35 of the first transistor, has a P-type body 45 Shares the gate electrode 42 of the first transistor, and has a source electrode 46 over which is deposited the positive » H.T.» rail 25 of the inverter. The negative and common rail 26 is the first component to be deposited on the insulating substrate 11. The input signal to the inverter is applied between the gate 42 and the common rail 26 and the output is taken from the common drain electrode 35. The thickness of insulating layers 38, 40 is adjusted during manufacture to obtain a suitable value for the capacitance developed between the gate electrode and the negative rail-this capacitance gives input charge storage for the inverter.
GB1229057D
1967-04-26
1968-04-26
Expired
GB1229057A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US63390467A
1967-04-26
1967-04-26
Publications (1)
Publication Number
Publication Date
GB1229057A
true
GB1229057A
(en)
1971-04-21
Family
ID=24541610
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1229057D
Expired
GB1229057A
(en)
1967-04-26
1968-04-26
Country Status (4)
Country
Link
US
(1)
US3493812A
(en)
FR
(1)
FR1560950A
(en)
GB
(1)
GB1229057A
(en)
NL
(1)
NL6805877A
(en)
Families Citing this family (21)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3591855A
(en)
*
1969-04-17
1971-07-06
Rca Corp
Complementary field-effect transistor buffer circuit
US3754161A
(en)
*
1969-05-02
1973-08-21
Owens Illinois Inc
Integrated circuit system
US3614739A
(en)
*
1969-05-02
1971-10-19
Owens Illinois Inc
Integrated driving circuitry for gas discharge panel
US3611296A
(en)
*
1969-12-29
1971-10-05
Owens Illinois Inc
Driving circuitry for gas discharge panel
US3708731A
(en)
*
1970-02-24
1973-01-02
Unisem Corp
Gallium arsenide integrated circuit
US3624428A
(en)
*
1970-03-20
1971-11-30
Rca Corp
Electric signal processing circuit employing capacitively scanned phototransistor array
US3683193A
(en)
*
1970-10-26
1972-08-08
Rca Corp
Bucket brigade scanning of sensor array
US3676702A
(en)
*
1971-01-04
1972-07-11
Rca Corp
Comparator circuit
US3700961A
(en)
*
1971-08-19
1972-10-24
Nasa
Phototransistor imaging system
JPS5066184A
(en)
*
1973-10-12
1975-06-04
US4065781A
(en)
*
1974-06-21
1977-12-27
Westinghouse Electric Corporation
Insulated-gate thin film transistor with low leakage current
US4100460A
(en)
*
1976-02-02
1978-07-11
Rockwell International Corporation
One chip direct drive and keyboard sensing arrangement for light emitting diode and digitron displays
US4110662A
(en)
*
1976-06-14
1978-08-29
Westinghouse Electric Corp.
Thin-film analog video scan and driver circuit for solid state displays
JPS5327374A
(en)
*
1976-08-26
1978-03-14
Sharp Corp
High voltage drive metal oxide semiconductor device
JPS5772370A
(en)
*
1980-10-23
1982-05-06
Canon Inc
Photoelectric converter
JPS59208783A
(en)
*
1983-05-12
1984-11-27
Seiko Instr & Electronics Ltd
Thin film transistor
US4547789A
(en)
*
1983-11-08
1985-10-15
Energy Conversion Devices, Inc.
High current thin film transistor
US4752814A
(en)
*
1984-03-12
1988-06-21
Xerox Corporation
High voltage thin film transistor
JPS62265756A
(en)
*
1986-05-14
1987-11-18
Oki Electric Ind Co Ltd
Thin film transistor matrix
US9934983B2
(en)
*
2014-02-03
2018-04-03
Cree, Inc.
Stress mitigation for thin and thick films used in semiconductor circuitry
KR101730902B1
(en)
*
2015-10-19
2017-04-27
서울대학교산학협력단
Vertical-type organic light-emitting transistors with reduced leakage current and method for fabricating the same
Family Cites Families (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3287611A
(en)
*
1961-08-17
1966-11-22
Gen Motors Corp
Controlled conducting region geometry in semiconductor devices
US3260863A
(en)
*
1964-03-19
1966-07-12
Rca Corp
Threshold circuit utilizing field effect transistors
NL6407445A
(en)
*
1964-07-01
1966-01-03
US3378783A
(en)
*
1965-12-13
1968-04-16
Rca Corp
Optimized digital amplifier utilizing insulated-gate field-effect transistors
US3388292A
(en)
*
1966-02-15
1968-06-11
Rca Corp
Insulated gate field-effect transistor means for information gating and driving of solid state display panels
US3322974A
(en)
*
1966-03-14
1967-05-30
Rca Corp
Flip-flop adaptable for counter comprising inverters and inhibitable gates and in cooperation with overlapping clocks for temporarily maintaining complementary outputs at same digital level
1967
1967-04-26
US
US633904A
patent/US3493812A/en
not_active
Expired – Lifetime
1968
1968-04-25
NL
NL6805877A
patent/NL6805877A/xx
unknown
1968-04-26
FR
FR1560950D
patent/FR1560950A/fr
not_active
Expired
1968-04-26
GB
GB1229057D
patent/GB1229057A/en
not_active
Expired
Also Published As
Publication number
Publication date
US3493812A
(en)
1970-02-03
DE1764172B2
(en)
1974-07-25
FR1560950A
(en)
1969-03-21
NL6805877A
(en)
1968-10-28
DE1764172A1
(en)
1972-03-30
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Legal Events
Date
Code
Title
Description
1971-09-02
PS
Patent sealed [section 19, patents act 1949]
1976-11-24
PLNP
Patent lapsed through nonpayment of renewal fees
