GB1229128A – – Google Patents
GB1229128A – – Google Patents
Info
Publication number
GB1229128A
GB1229128A
GB1229128DA
GB1229128A
GB 1229128 A
GB1229128 A
GB 1229128A
GB 1229128D A
GB1229128D A
GB 1229128DA
GB 1229128 A
GB1229128 A
GB 1229128A
Authority
GB
United Kingdom
Prior art keywords
substrate
sicl
silicon
masking
june
Prior art date
1968-06-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-06-14
Filing date
1969-06-13
Publication date
1971-04-21
1969-06-13
Application filed
filed
Critical
1971-04-21
Publication of GB1229128A
publication
Critical
patent/GB1229128A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C01—INORGANIC CHEMISTRY
C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
C01B33/00—Silicon; Compounds thereof
C01B33/02—Silicon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/026—Deposition thru hole in mask
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/043—Dual dielectric
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/05—Etch and refill
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/051—Etching
Abstract
1,229,128. Silicon. SIEMENS A.G. 13 June, 1969 [14 June, 1968], No. 30010/69. Heading C1A. [Also in Divisions C7 and H1] Silicon is deposited epitaxially on selected areas of a monocrystalline Si substrate by masking the remainder thereof and depositing Si from a gas containing a gaseous halogen compound thereof by pyrolysis at the heated substrate surface, the reaction mixture having added to it a free halogen in an amount such that additional hydrogen halide is formed to cause deposition of the Si on the exposed areas of the substrate, but not on the masking layer. The masking material may be SiO 2 , Si 3 N 4 , or SiC, and the preferred halogen is bromine. In Fig. 2, hydrogen enters at 5, and Br 2 and SiCl 4 from vaporizers 6 and 4 respectively are entrained therein, and an inert gas such as N 2 or Ar may also be admitted at 8, flow rates being governed by meters 9, 10 and 11 coacting with the taps and valves shown. The supply of SiCl 4 may initially be shut off to permit the H 2 /Br 2 stream to etch the substrate clean, and then with tap 12 open, silicon is selectively deposited on the unmasked areas of substrate 3, which is heated by heater 2. SiCl 4 may be added to the Br 2 in 6 to remove water therefrom.
GB1229128D
1968-06-14
1969-06-13
Expired
GB1229128A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE19681769605
DE1769605A1
(en)
1968-06-14
1968-06-14
Method for producing epitaxial growth layers from semiconductor material for electrical components
Publications (1)
Publication Number
Publication Date
GB1229128A
true
GB1229128A
(en)
1971-04-21
Family
ID=5700202
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1229128D
Expired
GB1229128A
(en)
1968-06-14
1969-06-13
Country Status (8)
Country
Link
US
(1)
US3653991A
(en)
AT
(2)
AT306794B
(en)
CH
(1)
CH499879A
(en)
DE
(1)
DE1769605A1
(en)
FR
(1)
FR1595220A
(en)
GB
(1)
GB1229128A
(en)
NL
(1)
NL6908366A
(en)
SE
(1)
SE356439B
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3634140A1
(en)
*
1985-10-07
1987-04-09
Canon Kk
METHOD FOR SELECTIVELY FORMING A DEPOSITED LAYER
GB2185758A
(en)
*
1985-12-28
1987-07-29
Canon Kk
Method for forming deposited film
Families Citing this family (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US6076652A
(en)
1971-04-16
2000-06-20
Texas Instruments Incorporated
Assembly line system and apparatus controlling transfer of a workpiece
US3941647A
(en)
*
1973-03-08
1976-03-02
Siemens Aktiengesellschaft
Method of producing epitaxially semiconductor layers
US4349394A
(en)
*
1979-12-06
1982-09-14
Siemens Corporation
Method of making a zener diode utilizing gas-phase epitaxial deposition
US4522662A
(en)
*
1983-08-12
1985-06-11
Hewlett-Packard Company
CVD lateral epitaxial growth of silicon over insulators
DE3726971A1
(en)
*
1987-08-13
1989-02-23
Standard Elektrik Lorenz Ag
Method for producing planar epitaxial layers by means of selective metal-organic vapour phase epitaxy (MOVPE)
US5064684A
(en)
*
1989-08-02
1991-11-12
Eastman Kodak Company
Waveguides, interferometers, and methods of their formation
US20090087967A1
(en)
*
2005-11-14
2009-04-02
Todd Michael A
Precursors and processes for low temperature selective epitaxial growth
Family Cites Families (9)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL256300A
(en)
*
1959-05-28
1900-01-01
US3296040A
(en)
*
1962-08-17
1967-01-03
Fairchild Camera Instr Co
Epitaxially growing layers of semiconductor through openings in oxide mask
US3345209A
(en)
*
1964-04-02
1967-10-03
Ibm
Growth control of disproportionation process
DE1544187A1
(en)
*
1964-04-25
1971-03-04
Fujitsu Ltd
Process for the production of semiconductor crystals by deposition from the gas phase
NL6513397A
(en)
*
1964-11-02
1966-05-03
Siemens Ag
DE1287047B
(en)
*
1965-02-18
1969-01-16
Siemens Ag
Method and device for depositing a monocrystalline semiconductor layer
US3345223A
(en)
*
1965-09-28
1967-10-03
Ibm
Epitaxial deposition of semiconductor materials
US3472689A
(en)
*
1967-01-19
1969-10-14
Rca Corp
Vapor deposition of silicon-nitrogen insulating coatings
GB1147014A
(en)
*
1967-01-27
1969-04-02
Westinghouse Electric Corp
Improvements in diffusion masking
1968
1968-06-14
DE
DE19681769605
patent/DE1769605A1/en
active
Pending
1968-12-17
FR
FR1595220D
patent/FR1595220A/fr
not_active
Expired
1969
1969-06-02
NL
NL6908366A
patent/NL6908366A/xx
unknown
1969-06-10
SE
SE08257/69A
patent/SE356439B/xx
unknown
1969-06-12
CH
CH902369A
patent/CH499879A/en
not_active
IP Right Cessation
1969-06-12
AT
AT559469A
patent/AT306794B/en
not_active
IP Right Cessation
1969-06-12
AT
AT1050569A
patent/AT308828B/en
not_active
IP Right Cessation
1969-06-13
GB
GB1229128D
patent/GB1229128A/en
not_active
Expired
1969-06-16
US
US833818A
patent/US3653991A/en
not_active
Expired – Lifetime
Cited By (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3634140A1
(en)
*
1985-10-07
1987-04-09
Canon Kk
METHOD FOR SELECTIVELY FORMING A DEPOSITED LAYER
US5393646A
(en)
*
1985-10-07
1995-02-28
Canon Kabushiki Kaisha
Method for selective formation of a deposited film
GB2185758A
(en)
*
1985-12-28
1987-07-29
Canon Kk
Method for forming deposited film
GB2185758B
(en)
*
1985-12-28
1990-09-05
Canon Kk
Method for forming deposited film
Also Published As
Publication number
Publication date
NL6908366A
(en)
1969-12-16
AT308828B
(en)
1973-07-25
SE356439B
(en)
1973-05-28
FR1595220A
(en)
1970-06-08
US3653991A
(en)
1972-04-04
CH499879A
(en)
1970-11-30
AT306794B
(en)
1973-04-25
DE1769605A1
(en)
1971-07-01
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Legal Events
Date
Code
Title
Description
1971-09-02
PS
Patent sealed [section 19, patents act 1949]
1976-01-14
PLNP
Patent lapsed through nonpayment of renewal fees
