GB1307257A – Optical method and apparatus for forming an array of discrete areas on a supporting surface
– Google Patents
GB1307257A – Optical method and apparatus for forming an array of discrete areas on a supporting surface
– Google Patents
Optical method and apparatus for forming an array of discrete areas on a supporting surface
Info
Publication number
GB1307257A
GB1307257A
GB4526570A
GB4526570A
GB1307257A
GB 1307257 A
GB1307257 A
GB 1307257A
GB 4526570 A
GB4526570 A
GB 4526570A
GB 4526570 A
GB4526570 A
GB 4526570A
GB 1307257 A
GB1307257 A
GB 1307257A
Authority
GB
United Kingdom
Prior art keywords
coating
photo
array
diffraction image
resist
Prior art date
1969-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4526570A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-09-25
Filing date
1970-09-23
Publication date
1973-02-14
1970-09-23
Application filed by RCA Corp
filed
Critical
RCA Corp
1973-02-14
Publication of GB1307257A
publication
Critical
patent/GB1307257A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
238000000034
method
Methods
0.000
title
abstract
2
230000003287
optical effect
Effects
0.000
title
1
239000011248
coating agent
Substances
0.000
abstract
9
238000000576
coating method
Methods
0.000
abstract
9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
3
229920002120
photoresistant polymer
Polymers
0.000
abstract
3
229910052710
silicon
Inorganic materials
0.000
abstract
3
239000010703
silicon
Substances
0.000
abstract
3
238000009792
diffusion process
Methods
0.000
abstract
2
230000001427
coherent effect
Effects
0.000
abstract
1
229910052738
indium
Inorganic materials
0.000
abstract
1
APFVFJFRJDLVQX-UHFFFAOYSA-N
indium atom
Chemical compound
[In]
APFVFJFRJDLVQX-UHFFFAOYSA-N
0.000
abstract
1
230000000737
periodic effect
Effects
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
239000000758
substrate
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L27/144—Devices controlled by radiation
H01L27/1446—Devices controlled by radiation in a repetitive configuration
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/20—Exposure; Apparatus therefor
G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/70—Microphotolithographic exposure; Apparatus therefor
G03F7/70216—Mask projection systems
G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
H01J29/36—Photoelectric screens; Charge-storage screens
H01J29/39—Charge-storage screens
H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
H01J9/233—Manufacture of photoelectric screens or charge-storage screens
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
H01L21/0274—Photolithographic processes
H01L21/0275—Photolithographic processes using lasers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S359/00—Optical: systems and elements
Y10S359/90—Methods
Abstract
1307257 Diffraction Gratings RCA CORPORATION 23 Sept 1970 [25 Sept 1969] 45265/ 70 Headings G2A, G2C, G2J, G2M [Also in Division H2] An array of discrete areas are formed on a supporting surface 28 by covering the surface with a photo-resist coating 36, exposing the photoresist coating directly to a diffraction image from a photo-mask 26 by placing the photo-resist in the plane of the diffraction image thereby forming exposed and unexposed portions of the coating, and developing the photo-resist coating to uncover an array of discrete areas of the supporting surface. The photo-mask 26 preferably comprises a crossed grid ruling 32 of opaque indium squares separated by openings 3À2Á wide to form a periodic array of light transmitting areas. The photoresist coating in a first exposure is positioned not precisely in a diffraction image plane. A second photo-resist coating is then applied after the first exposure, and this second coating is placed precisely in the diffraction image plane. It is preferred to use coherent light during exposure and simultaneously oscillate the photoresist coating at least once over a distance of a quarter of a wavelength. The method is particularly applicable to making semi-conductor diodes formed with a P-type diffusion region in the surface of an N-type silicon substrate wafer, with the diffusion regions connected respectively to pads of P-type silicon extending through apertures in a silicon diode coating over a wafer surface.
GB4526570A
1969-09-25
1970-09-23
Optical method and apparatus for forming an array of discrete areas on a supporting surface
Expired
GB1307257A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US86086569A
1969-09-25
1969-09-25
Publications (1)
Publication Number
Publication Date
GB1307257A
true
GB1307257A
(en)
1973-02-14
Family
ID=25334219
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4526570A
Expired
GB1307257A
(en)
1969-09-25
1970-09-23
Optical method and apparatus for forming an array of discrete areas on a supporting surface
Country Status (6)
Country
Link
US
(1)
US3615449A
(en)
JP
(1)
JPS5310429B1
(en)
DE
(1)
DE2047316C3
(en)
FR
(1)
FR2062602A5
(en)
GB
(1)
GB1307257A
(en)
NL
(1)
NL7014102A
(en)
Families Citing this family (18)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
IT939738B
(en)
*
1970-08-12
1973-02-10
Rank Organisation Ltd
LIGHTING DEVICE FOR PHOTOLITHOGRAPHIC PRINTING OF MICROCIRCUIT COMPONENTS
DE2116713B2
(en)
*
1971-04-06
1974-03-28
Ibm Deutschland Gmbh, 7000 Stuttgart
Exposure method for imaging very finely structured light patterns on photoresist layers and a suitable exposure device
US3697178A
(en)
*
1971-11-01
1972-10-10
Rca Corp
Method of projection printing photoresist masking layers, including elimination of spurious diffraction-associated patterns from the print
JPS54137932U
(en)
*
1978-03-15
1979-09-25
JPS54138016U
(en)
*
1978-03-18
1979-09-25
US4231820A
(en)
*
1979-02-21
1980-11-04
Rca Corporation
Method of making a silicon diode array target
US4360586A
(en)
*
1979-05-29
1982-11-23
Massachusetts Institute Of Technology
Spatial period division exposing
FR2465255B1
(en)
*
1979-09-10
1987-02-20
Roumiguieres Jean Louis
PROCESS FOR BRINGING THE FILLED SHADOW OF A PERCEODALLY DISTRIBUTED SLOTTED MASK ONTO A SUPPORT, AND APPLICATION OF THIS PROCESS IN PARTICULAR IN PHOTOLITHOGRAVING
DE3212393A1
(en)
*
1982-04-02
1983-10-13
Karl Süss KG, Präzisionsgeräte für Wissenschaft und Industrie – GmbH & Co, 8046 Garching
INTERFERENCE LUBRICATION METHOD AND ALIGNMENT METHOD AND DEVICE
DE3315665A1
(en)
*
1983-04-29
1984-10-31
Siemens AG, 1000 Berlin und 8000 München
MANUFACTURE OF GALVANOPLASTIC FLAT PARTS WITH TOTATIONALLY UNSYMMETRIC, CONE-SHAPED STRUCTURES
GB8615908D0
(en)
*
1986-06-30
1986-08-06
Hugle W B
Integrated circuits
US5264957A
(en)
*
1992-07-02
1993-11-23
The United States Of America As Represented By The Secretary Of The Air Force
Electrically controlled multiple dispersion (zoom) device
GB2289771B
(en)
*
1994-05-26
1997-07-30
Northern Telecom Ltd
Forming Bragg gratings in photosensitive waveguides
DE19810055A1
(en)
*
1998-03-09
1999-09-23
Suess Kg Karl
Method for exposing an object, e.g. a photoresist layer to a substantially parallel light
US6096458A
(en)
*
1998-08-05
2000-08-01
International Business Machines Corporation
Methods for manufacturing photolithography masks utilizing interfering beams of radiation
ATE502325T1
(en)
*
2004-10-22
2011-04-15
Eulitha Ag
SYSTEM AND METHOD FOR GENERATING A PERIODIC AND/OR NEAR-PERIODIC PATTERN ON A SAMPLE
CN103688198A
(en)
*
2011-05-19
2014-03-26
株式会社日立高新技术
Diffraction grating manufacturing method, spectrophotometer, and semiconductor device manufacturing method
US11042098B2
(en)
*
2019-02-15
2021-06-22
Applied Materials, Inc.
Large area high resolution feature reduction lithography technique
1969
1969-09-25
US
US860865A
patent/US3615449A/en
not_active
Expired – Lifetime
1970
1970-09-23
GB
GB4526570A
patent/GB1307257A/en
not_active
Expired
1970-09-24
NL
NL7014102A
patent/NL7014102A/xx
not_active
Application Discontinuation
1970-09-24
FR
FR7034629A
patent/FR2062602A5/fr
not_active
Expired
1970-09-25
DE
DE2047316A
patent/DE2047316C3/en
not_active
Expired
1976
1976-08-09
JP
JP9522276A
patent/JPS5310429B1/ja
active
Pending
Also Published As
Publication number
Publication date
DE2047316A1
(en)
1971-05-06
FR2062602A5
(en)
1971-06-25
JPS5310429B1
(en)
1978-04-13
DE2047316C3
(en)
1979-04-19
DE2047316B2
(en)
1978-08-17
US3615449A
(en)
1971-10-26
NL7014102A
(en)
1971-03-29
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Legal Events
Date
Code
Title
Description
1973-06-27
PS
Patent sealed [section 19, patents act 1949]
1980-04-30
PCNP
Patent ceased through non-payment of renewal fee
