GB1332384A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1332384A – Fabrication of semiconductor devices
– Google Patents

GB1332384A – Fabrication of semiconductor devices
– Google Patents
Fabrication of semiconductor devices

Info

Publication number
GB1332384A

GB1332384A
GB2875871A
GB2875871A
GB1332384A
GB 1332384 A
GB1332384 A
GB 1332384A
GB 2875871 A
GB2875871 A
GB 2875871A
GB 2875871 A
GB2875871 A
GB 2875871A
GB 1332384 A
GB1332384 A
GB 1332384A
Authority
GB
United Kingdom
Prior art keywords
gate
source
drain regions
coating
doped
Prior art date
1970-10-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB2875871A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-10-07
Filing date
1971-06-18
Publication date
1973-10-03

1971-06-18
Application filed by RCA Corp
filed
Critical
RCA Corp

1973-10-03
Publication of GB1332384A
publication
Critical
patent/GB1332384A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L29/76—Unipolar devices, e.g. field effect transistors

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/043—Dual dielectric

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/122—Polycrystalline

Abstract

1332384 Semi-conductor devices RCA CORPORATION 18 June 1971 [7 Oct 1970] 28758/71 Heading H1K The highly-doped semi-conductor gate 181 of an IGFET is used as a mask during diffusion of the source and drain regions 30, 32, a protective coating 20 being provided over the gate 181 during this process. The effect of the coating 20 on the lateral edges of the gate 181 is to reduce the amount of overlap between the gate 181 and the source and drain regions 30, 32 and the coating 20 also masks the Si or Ge gate 181 against diffusion, e.g. from the P-doped SiO 2 layer 24 used in the present embodiment as the dopant source for the source and drain regions 30, 32. The basic semi-conductor material may be B-doped Si or Ge, and may also comprise a thin layer on a sapphire substrate. The gate dielectric may comprise SiO 2 alone or, as shown, silicon nitride 16 on SiO 2 14. Al electrodes are provided over the whole area of the source and drain regions 30, 32 and the adjacent body surface, and an Al gate electrode also makes contact with the gate 181 through an opening in the coating 20.

GB2875871A
1970-10-07
1971-06-18
Fabrication of semiconductor devices

Expired

GB1332384A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US7880670A

1970-10-07
1970-10-07

Publications (1)

Publication Number
Publication Date

GB1332384A
true

GB1332384A
(en)

1973-10-03

Family
ID=22146335
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB2875871A
Expired

GB1332384A
(en)

1970-10-07
1971-06-18
Fabrication of semiconductor devices

Country Status (7)

Country
Link

US
(1)

US3745647A
(en)

JP
(1)

JPS5010102B1
(en)

CA
(1)

CA926036A
(en)

DE
(1)

DE2133184A1
(en)

FR
(1)

FR2112263B1
(en)

GB
(1)

GB1332384A
(en)

MY
(1)

MY7400250A
(en)

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2641752A1
(en)

1975-09-17
1977-03-24
Hitachi Ltd

METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR

DE3235467A1
(en)

1981-09-25
1983-04-14
Hitachi, Ltd., Tokyo

SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Families Citing this family (20)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3859717A
(en)

1970-12-21
1975-01-14
Rockwell International Corp
Method of manufacturing control electrodes for charge coupled circuits and the like

GB1465078A
(en)

1973-07-30
1977-02-23
Hitachi Ltd
Semiconductor devices

US3931674A
(en)

1974-02-08
1976-01-13
Fairchild Camera And Instrument Corporation
Self aligned CCD element including two levels of electrodes and method of manufacture therefor

JPS5513426B2
(en)

1974-06-18
1980-04-09

NL7510903A
(en)

1975-09-17
1977-03-21
Philips Nv

PROCESS FOR MANUFACTURING A SEMI-GUIDE DEVICE, AND DEVICE MANUFACTURED ACCORDING TO THE PROCESS.

US4169270A
(en)

1976-12-09
1979-09-25
Fairchild Camera And Instrument Corporation
Insulated-gate field-effect transistor with self-aligned contact hole to source or drain

US4182023A
(en)

1977-10-21
1980-01-08
Ncr Corporation
Process for minimum overlap silicon gate devices

US4219379A
(en)

1978-09-25
1980-08-26
Mostek Corporation
Method for making a semiconductor device

US4236294A
(en)

1979-03-16
1980-12-02
International Business Machines Corporation
High performance bipolar device and method for making same

JPS55138868A
(en)

1979-04-17
1980-10-30
Toshiba Corp
Bipolar integrated circuit and method of fabricating the same

US4274193A
(en)

1979-07-05
1981-06-23
Rca Corporation
Method for making a closed gate MOS transistor with self-aligned contacts

US4272881A
(en)

1979-07-20
1981-06-16
Rca Corporation
Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer

US4554570A
(en)

1982-06-24
1985-11-19
Rca Corporation
Vertically integrated IGFET device

US4478679A
(en)

1983-11-30
1984-10-23
Storage Technology Partners
Self-aligning process for placing a barrier metal over the source and drain regions of MOS semiconductors

US5811865A
(en)

1993-12-22
1998-09-22
Stmicroelectronics, Inc.
Dielectric in an integrated circuit

US5927992A
(en)

1993-12-22
1999-07-27
Stmicroelectronics, Inc.
Method of forming a dielectric in an integrated circuit

US5880519A
(en)

1997-05-15
1999-03-09
Vlsi Technology, Inc.
Moisture barrier gap fill structure and method for making the same

KR100311971B1
(en)

1998-12-23
2001-12-28
윤종용

Non-volatile Memory Semiconductor Device Manufacturing Method

US20030089944A1
(en)

1998-12-23
2003-05-15
Weon-Ho Park
Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates

JP2000208775A
(en)

1999-01-18
2000-07-28
Furontekku:Kk
Semiconductor device and its manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3475234A
(en)

1967-03-27
1969-10-28
Bell Telephone Labor Inc
Method for making mis structures

US3566517A
(en)

1967-10-13
1971-03-02
Gen Electric
Self-registered ig-fet devices and method of making same

US3566457A
(en)

1968-05-01
1971-03-02
Gen Electric
Buried metallic film devices and method of making the same

US3576478A
(en)

1969-07-22
1971-04-27
Philco Ford Corp
Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode

1970

1970-10-07
US
US00078806A
patent/US3745647A/en
not_active
Expired – Lifetime

1971

1971-06-07
CA
CA115026A
patent/CA926036A/en
not_active
Expired

1971-06-18
GB
GB2875871A
patent/GB1332384A/en
not_active
Expired

1971-07-03
DE
DE19712133184
patent/DE2133184A1/en
active
Pending

1971-07-05
FR
FR7124443A
patent/FR2112263B1/fr
not_active
Expired

1971-07-06
JP
JP46049885A
patent/JPS5010102B1/ja
active
Pending

1974

1974-12-30
MY
MY250/74A
patent/MY7400250A/en
unknown

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2641752A1
(en)

1975-09-17
1977-03-24
Hitachi Ltd

METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR

DE3235467A1
(en)

1981-09-25
1983-04-14
Hitachi, Ltd., Tokyo

SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF

Also Published As

Publication number
Publication date

FR2112263B1
(en)

1977-06-03

FR2112263A1
(en)

1972-06-16

US3745647A
(en)

1973-07-17

DE2133184A1
(en)

1972-04-13

JPS5010102B1
(en)

1975-04-18

CA926036A
(en)

1973-05-08

MY7400250A
(en)

1974-12-31

Información de contacto