GB1342514A – Chopper circuits
– Google Patents
GB1342514A – Chopper circuits
– Google Patents
Chopper circuits
Info
Publication number
GB1342514A
GB1342514A
GB2543171*A
GB2543171A
GB1342514A
GB 1342514 A
GB1342514 A
GB 1342514A
GB 2543171 A
GB2543171 A
GB 2543171A
GB 1342514 A
GB1342514 A
GB 1342514A
Authority
GB
United Kingdom
Prior art keywords
thyristor
slm
mcrf
current
acrf
Prior art date
1970-03-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2543171*A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-03-27
Filing date
1971-04-19
Publication date
1974-01-03
1971-04-19
Application filed by Hitachi Ltd
filed
Critical
Hitachi Ltd
1974-01-03
Publication of GB1342514A
publication
Critical
patent/GB1342514A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
150000001875
compounds
Chemical class
0.000
abstract
6
239000003990
capacitor
Substances
0.000
abstract
3
239000006096
absorbing agent
Substances
0.000
abstract
1
239000000969
carrier
Substances
0.000
abstract
1
230000001939
inductive effect
Effects
0.000
abstract
1
Classifications
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
H02M1/00—Details of apparatus for conversion
H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
H—ELECTRICITY
H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
H02M3/00—Conversion of dc power input into dc power output
H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
H02M3/125—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
H02M3/135—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
Abstract
1342514 DC-DC converters HITACHI Ltd 19 April 1971 [27 March 1970] 25431/71 Heading H2F [Also in Division H3] A chopping circuit (Fig. 2) comprises a first compound thyristor (Fig. 1a) MCRf connected in series with a saturable reactance SLM and a further compound thyristor ACRf, connected in series with a further saturable reactance SLA and energy storing means to commutate said first thyristor (A compound thyristor is similar to a normal thyristor 1 in that it has four layers P-N-P-N, the inner two of which pB and nB (Fig. 1a) are extended and respectively connected to the anode A and cathode K electrodes of the thyristor. Thus the thyristor 1 has a diode 2 of opposed polarity in parallel with it.) Although the compound thyristor switches off quickly due to current flowing through the diode causing the withdrawal of residual carriers in junction J 3 of the compound thyristor, stored charge in the diode causes the thyristor 1b turn on again when forward voltage is reapplied. The saturable reactors overcome this by limiting the rate of charge of current through the diode region 2 and the rate of change of applied forward voltage to the thyristor. When voltage is applied to the circuit of Fig. 2, the capacitor Co charges to the polarity shown via the diode region of thyristor ACRf. Thyristor MCRf is then fired, saturable reactance SLM saturates positively and current flows through MCRf. Thyristor ACRf is then fired and capacitor Co discharges through a linear reactor Lo, positively saturates saturable reactance SLA and eventually discharges around the loop Lo, ACRf, SLA, SLM, MCRf and recharges to the opposite polarity. Co then discharges, SLA saturates negatively as the current through ACRf goes negative and eventually the current equals the load current through MCRf and the thyristor region of MCRf stops conducting, the diode region now passing the reverse current which causes SLM to saturate negatively. As the capacitor recharges positively, first SLM and then SLA change to nearly positive saturation and the sequence is then repeated. Surge absorbers CM, RM and and CA, RA help to limit across the thyristors and linear impedances ZM and ZA, which may be either resistive or inductive, modify the B-H curve of the saturable reactances to simulate a larger value of H. The compound thyristor ACRf may be reversed, in which case it is fired first in order to charge Co and suitably for Co to discharge postively in the above sequence of events. Current sharing of several thyristors MCRf is accomplished by using a balancetransformer AB, Fig. 9, and individual saturable reactances SLM
GB2543171*A
1970-03-27
1971-04-19
Chopper circuits
Expired
GB1342514A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP45025280A
JPS4946573B1
(en)
1970-03-27
1970-03-27
Publications (1)
Publication Number
Publication Date
GB1342514A
true
GB1342514A
(en)
1974-01-03
Family
ID=12161595
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2543171*A
Expired
GB1342514A
(en)
1970-03-27
1971-04-19
Chopper circuits
Country Status (4)
Country
Link
US
(1)
US3714467A
(en)
JP
(1)
JPS4946573B1
(en)
CA
(1)
CA931220A
(en)
GB
(1)
GB1342514A
(en)
Families Citing this family (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4107551A
(en)
*
1973-04-17
1978-08-15
Mitsubishi Denki Kabushiki Kaisha
Thyristor turn-off system
US4230955A
(en)
*
1978-04-06
1980-10-28
Megapulse Incorporated
Method of and apparatus for eliminating priming and carrier sweep-out losses in SCR switching circuits and the like
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
BE620396A
(en)
*
1961-07-19
US3360712A
(en)
*
1963-12-27
1967-12-26
Gen Electric
Time ratio control and inverter power circuits
GB1062736A
(en)
*
1964-09-28
1967-03-22
Westinghouse Brake & Signal
Improvements relating to control rectifier circuits
1970
1970-03-27
JP
JP45025280A
patent/JPS4946573B1/ja
active
Pending
1971
1971-03-26
CA
CA108823A
patent/CA931220A/en
not_active
Expired
1971-03-29
US
US00128722A
patent/US3714467A/en
not_active
Expired – Lifetime
1971-04-19
GB
GB2543171*A
patent/GB1342514A/en
not_active
Expired
Also Published As
Publication number
Publication date
CA931220A
(en)
1973-07-31
JPS4946573B1
(en)
1974-12-11
US3714467A
(en)
1973-01-30
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Legal Events
Date
Code
Title
Description
1974-05-15
PS
Patent sealed [section 19, patents act 1949]
1991-05-22
PE20
Patent expired after termination of 20 years