GB1377522A – Charge coupled array
– Google Patents
GB1377522A – Charge coupled array
– Google Patents
Charge coupled array
Info
Publication number
GB1377522A
GB1377522A
GB357074A
GB357074A
GB1377522A
GB 1377522 A
GB1377522 A
GB 1377522A
GB 357074 A
GB357074 A
GB 357074A
GB 357074 A
GB357074 A
GB 357074A
GB 1377522 A
GB1377522 A
GB 1377522A
Authority
GB
United Kingdom
Prior art keywords
electrodes
poly
substrate
transfer paths
adjacent
Prior art date
1971-04-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB357074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-04-06
Filing date
1972-01-05
Publication date
1974-12-18
1972-01-05
Application filed by RCA Corp
filed
Critical
RCA Corp
1974-12-18
Publication of GB1377522A
publication
Critical
patent/GB1377522A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
229910021420
polycrystalline silicon
Inorganic materials
0.000
abstract
9
239000000758
substrate
Substances
0.000
abstract
5
229910004298
SiO 2
Inorganic materials
0.000
abstract
1
239000004020
conductor
Substances
0.000
abstract
1
238000002955
isolation
Methods
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L29/42312—Gate electrodes for field effect devices
H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G11C19/287—Organisation of a multiplicity of shift registers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L27/144—Devices controlled by radiation
H01L27/146—Imager structures
H01L27/148—Charge coupled imagers
H01L27/14831—Area CCD imagers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1377522 Charge coupled devices RCA CORPORATION 5 Jan 1972 [6 April 1971] 03570/74 Divided out of 1377521 Heading H1K In a charge coupled array formed as a plurality of rows of notional elements in a common substrate each element is provided with a plurality of electrodes the potentials of which are controlled so that a row may be selectively read out by applying a certain number of power supply phases to shift the charges along the row but the contents of a row are stored in the elements if a lesser number of power supply phases are applied. A self scanning image sensor, Figs. 1 and 2 comprises an N type Si substrate covered with an SiO 2 layer having thick and thin parallel strips the thin strips defining the charge transfer paths. Poly-Si electrodes 54, 46 extend transversely to the transfer paths and Al electrodes 58, 60 are arranged between and overlapping the edges of, the adjacent poly-Si electrodes. Alternate ones of the Al electrodes are connected to out of phase # 1 and # 2 supplies and the poly-Si electrodes are also similarly connected. In order to achieve isolation of the # 2 supplies between adjacent charge transfer paths alternate poly-Si electrodes 56 are individual to each path and are contacted by the Al track joining the Al electrodes 60 to which the # 2 supply is connected. The other poly-Si electrodes 54 are common to all the transfer paths but are contacted at each crossing point by the 91 conductors. The poly- Si electrodes 54, 46 are arranged closer to the Si substrate than are the Al electrodes 58, 60 so that asymmetrically shaped potential wells are generated by control potentials applied to the poly-Si electrode and the adjacent Al electrode to which it is connected This ensures that the charge is shifted in only one direction when the appropriate # 2 supply is enabled. In variations the Al electrodes are arranged nearer the substrate than are the poly-Si electrodes, Fig. 5 (not shown), or the Al poly-Si electrodes are spaced equal distances from the substrate and the control signals arranged so that the potentials applied to the adjacent same phase electrodes are offset by a fixed amount to produce the required well asymmetry. Alternative embodiments using sets of three electrodes one electrode of each set being supplied with a constant bias and the other two electrodes being connected to out of phase pulsed supplies are described in the parent Specification 1,377,521.
GB357074A
1971-04-06
1972-01-05
Charge coupled array
Expired
GB1377522A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US131679A
US3890633A
(en)
1971-04-06
1971-04-06
Charge-coupled circuits
Publications (1)
Publication Number
Publication Date
GB1377522A
true
GB1377522A
(en)
1974-12-18
Family
ID=22450539
Family Applications (3)
Application Number
Title
Priority Date
Filing Date
GB38572A
Expired
GB1377521A
(en)
1971-04-06
1972-01-05
Charge coupled circuits
GB357074A
Expired
GB1377522A
(en)
1971-04-06
1972-01-05
Charge coupled array
GB357174A
Expired
GB1377523A
(en)
1971-04-06
1972-01-05
Charge coupled devices
Family Applications Before (1)
Application Number
Title
Priority Date
Filing Date
GB38572A
Expired
GB1377521A
(en)
1971-04-06
1972-01-05
Charge coupled circuits
Family Applications After (1)
Application Number
Title
Priority Date
Filing Date
GB357174A
Expired
GB1377523A
(en)
1971-04-06
1972-01-05
Charge coupled devices
Country Status (7)
Country
Link
US
(1)
US3890633A
(en)
JP
(2)
JPS54622B1
(en)
CA
(1)
CA1024255A
(en)
DE
(1)
DE2200455C3
(en)
FR
(1)
FR2131939B1
(en)
GB
(3)
GB1377521A
(en)
NL
(1)
NL183858C
(en)
Families Citing this family (15)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB1442841A
(en)
*
1973-11-13
1976-07-14
Secr Defence
Charge coupled devices
US4031315A
(en)
*
1974-09-27
1977-06-21
Siemens Aktiengesellschaft
Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
US3983395A
(en)
*
1974-11-29
1976-09-28
General Electric Company
MIS structures for background rejection in infrared imaging devices
US4011548A
(en)
*
1975-07-02
1977-03-08
Burroughs Corporation
Three phase charge-coupled device memory with inhibit lines
JPS5518064A
(en)
*
1978-07-26
1980-02-07
Sony Corp
Charge trsnsfer device
US4225947A
(en)
*
1978-12-29
1980-09-30
International Business Machines Corporation
Three phase line-addressable serial-parallel-serial storage array
JPS6055295U
(en)
*
1983-09-21
1985-04-18
フジテック株式会社
Starting device for mechanical multilevel parking system
JPH0652786B2
(en)
*
1986-05-13
1994-07-06
三菱電機株式会社
Solid-state image sensor
US5060245A
(en)
*
1990-06-29
1991-10-22
The United States Of America As Represented By The Secretary Of The Air Force
Interline transfer CCD image sensing apparatus
JP3123068B2
(en)
*
1990-09-05
2001-01-09
ソニー株式会社
Solid-state imaging device
JP2604905B2
(en)
*
1990-11-29
1997-04-30
宇宙開発事業団
Solid-state imaging device
JPH06268192A
(en)
*
1993-03-12
1994-09-22
Toshiba Corp
Solid-state image sensing device
DE69428394T2
(en)
*
1993-05-21
2002-07-04
Koninkl Philips Electronics Nv
Charge coupled imaging device
JP4249433B2
(en)
*
2002-05-15
2009-04-02
Ｎｅｃエレクトロニクス株式会社
Charge transfer device and manufacturing method thereof
US8717469B2
(en)
*
2010-02-03
2014-05-06
Microsoft Corporation
Fast gating photosurface
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL155155B
(en)
*
1968-04-23
1977-11-15
Philips Nv
DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN.
US3651349A
(en)
*
1970-02-16
1972-03-21
Bell Telephone Labor Inc
Monolithic semiconductor apparatus adapted for sequential charge transfer
US3654499A
(en)
*
1970-06-24
1972-04-04
Bell Telephone Labor Inc
Charge coupled memory with storage sites
US3683193A
(en)
*
1970-10-26
1972-08-08
Rca Corp
Bucket brigade scanning of sensor array
1971
1971-04-06
US
US131679A
patent/US3890633A/en
not_active
Expired – Lifetime
1971-12-31
CA
CA131,552A
patent/CA1024255A/en
not_active
Expired
1972
1972-01-05
JP
JP427272A
patent/JPS54622B1/ja
active
Pending
1972-01-05
DE
DE2200455A
patent/DE2200455C3/en
not_active
Expired
1972-01-05
GB
GB38572A
patent/GB1377521A/en
not_active
Expired
1972-01-05
GB
GB357074A
patent/GB1377522A/en
not_active
Expired
1972-01-05
GB
GB357174A
patent/GB1377523A/en
not_active
Expired
1972-01-06
NL
NLAANVRAGE7200180,A
patent/NL183858C/en
not_active
IP Right Cessation
1972-01-06
FR
FR7200382A
patent/FR2131939B1/fr
not_active
Expired
1977
1977-09-20
JP
JP11315777A
patent/JPS5333593A/en
active
Granted
Also Published As
Publication number
Publication date
NL183858B
(en)
1988-09-01
JPS5333593A
(en)
1978-03-29
GB1377523A
(en)
1974-12-18
FR2131939A1
(en)
1972-11-17
DE2200455B2
(en)
1975-01-09
NL183858C
(en)
1989-02-01
JPS54622B1
(en)
1979-01-12
DE2200455C3
(en)
1975-08-14
CA1024255A
(en)
1978-01-10
DE2200455A1
(en)
1972-10-12
FR2131939B1
(en)
1980-04-18
GB1377521A
(en)
1974-12-18
NL7200180A
(en)
1972-10-10
JPS5347680B2
(en)
1978-12-22
US3890633A
(en)
1975-06-17
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Legal Events
Date
Code
Title
Description
1975-04-30
PS
Patent sealed [section 19, patents act 1949]
