GB1389298A – Insulated gate field effect transistors
– Google Patents
GB1389298A – Insulated gate field effect transistors
– Google Patents
Insulated gate field effect transistors
Info
Publication number
GB1389298A
GB1389298A
GB1916172A
GB1916172A
GB1389298A
GB 1389298 A
GB1389298 A
GB 1389298A
GB 1916172 A
GB1916172 A
GB 1916172A
GB 1916172 A
GB1916172 A
GB 1916172A
GB 1389298 A
GB1389298 A
GB 1389298A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
read
insulated gate
gate field
Prior art date
1971-04-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1916172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-04-29
Filing date
1972-04-25
Publication date
1975-04-03
1972-04-25
Application filed by Sony Corp
filed
Critical
Sony Corp
1975-04-03
Publication of GB1389298A
publication
Critical
patent/GB1389298A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
230000005669
field effect
Effects
0.000
title
abstract
2
241001191009
Gymnomyza
Species
0.000
abstract
1
238000010586
diagram
Methods
0.000
abstract
1
HLXGRHNZZSMNRX-UHFFFAOYSA-M
sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate
Chemical compound
[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1
HLXGRHNZZSMNRX-UHFFFAOYSA-M
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
H01L29/51—Insulating materials associated therewith
H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
H01L29/51—Insulating materials associated therewith
H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Abstract
1389298 FET gate and store circuits SONY CORP 25 April 1972 [29 April 1971] 19161/72 Heading H3T [Also in Division H1] A circuit comprising a four bit memory using MAOS field effect transistors is shown, together with, in Fig. 11, the pulse wave modes for write, read and erase operations. V DD is the output power line and R out1 and R out2 are the read-out signals 1 and 2 respectively. Fig. 13 (not shown), is a block diagram of a 256 bit electrically programmable and alterable read only memory that has full decoding capability on a single chip.
GB1916172A
1971-04-29
1972-04-25
Insulated gate field effect transistors
Expired
GB1389298A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP2841871A
JPS511553B1
(en)
1971-04-29
1971-04-29
Publications (1)
Publication Number
Publication Date
GB1389298A
true
GB1389298A
(en)
1975-04-03
Family
ID=12248091
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1916172A
Expired
GB1389298A
(en)
1971-04-29
1972-04-25
Insulated gate field effect transistors
Country Status (7)
Country
Link
JP
(1)
JPS511553B1
(en)
CA
(1)
CA961583A
(en)
DE
(1)
DE2221128A1
(en)
FR
(1)
FR2135198B1
(en)
GB
(1)
GB1389298A
(en)
IT
(1)
IT953877B
(en)
NL
(1)
NL7205697A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2132622A
(en)
*
1982-11-26
1984-07-11
Faesite Spa
Articles made of bonded, heated and pressed wood fibres
1971
1971-04-29
JP
JP2841871A
patent/JPS511553B1/ja
active
Pending
1972
1972-04-25
GB
GB1916172A
patent/GB1389298A/en
not_active
Expired
1972-04-27
NL
NL7205697A
patent/NL7205697A/xx
not_active
Application Discontinuation
1972-04-28
FR
FR7215364A
patent/FR2135198B1/fr
not_active
Expired
1972-04-28
CA
CA140,830A
patent/CA961583A/en
not_active
Expired
1972-04-28
DE
DE19722221128
patent/DE2221128A1/en
active
Pending
1972-04-29
IT
IT2375672A
patent/IT953877B/en
active
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2132622A
(en)
*
1982-11-26
1984-07-11
Faesite Spa
Articles made of bonded, heated and pressed wood fibres
Also Published As
Publication number
Publication date
DE2221128A1
(en)
1972-11-09
FR2135198A1
(en)
1972-12-15
JPS511553B1
(en)
1976-01-19
CA961583A
(en)
1975-01-21
FR2135198B1
(en)
1980-02-01
NL7205697A
(en)
1972-10-31
IT953877B
(en)
1973-08-10
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Legal Events
Date
Code
Title
Description
1975-08-13
PS
Patent sealed
1985-01-03
PCNP
Patent ceased through non-payment of renewal fee
