GB1439879A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1439879A – Charge transfer devices
– Google Patents

GB1439879A – Charge transfer devices
– Google Patents
Charge transfer devices

Info

Publication number
GB1439879A

GB1439879A
GB1946374A
GB1946374A
GB1439879A
GB 1439879 A
GB1439879 A
GB 1439879A
GB 1946374 A
GB1946374 A
GB 1946374A
GB 1946374 A
GB1946374 A
GB 1946374A
GB 1439879 A
GB1439879 A
GB 1439879A
Authority
GB
United Kingdom
Prior art keywords
electrodes
charge
regions
electrode
conductivity type
Prior art date
1973-05-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB1946374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-05-07
Filing date
1974-05-03
Publication date
1976-06-16

1974-05-03
Application filed by Western Electric Co Inc
filed
Critical
Western Electric Co Inc

1976-06-16
Publication of GB1439879A
publication
Critical
patent/GB1439879A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L29/1025—Channel region of field-effect devices

H01L29/1062—Channel region of field-effect devices of charge coupled devices

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers

G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body

H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/40—Electrodes ; Multistep manufacturing processes therefor

H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

H01L29/42312—Gate electrodes for field effect devices

H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Abstract

1439879 Charge transfer devices WESTERN ELECTRIC CO Inc 3 May 1974 [7 May 1973] 19463/74 Heading H1K A charge transfer device comprises a twodimensional array of electrodes 12, shown in Fig. 1 arranged in rows and columns on an insulative layer 11 overlying a charge storage medium 10, wherein conductive paths 13, 14, 15 are formed by coupling together into a series electrodes 12 each from a different row and a different column and wherein any three adjacent such series of electrodes are coupled to different conductive paths, whereby under appropriate biasing conditions of the conductive paths mobile charge carriers may be transferred along either of the transfer paths defined by the rows or columns of the array. The arrangement permits serial-to-parallel and parallel-toserial conversion during information processing such as time division multiplexing. As shown the asymmetric potential wells under each electrode are established by fixed charge regions 16, of the same conductivity type as the semi-conductor medium 10 and formed by ion implantation, at the «back» edge of each electrode. Alternatively, the asymmetrical potential wells may be formed by opposite conductivity type fixed charge regions under the «front» edge of each electrode. According to the potentials supplied to the electrodes by the clock means 39 the charge carriers can be transferred in either a horizontal or vertical direction between the regions under adjacent electrodes. In a second embodiment, Fig. 2, the electrodes comprise diagonally overlapping squares with the input electrodes 29 and the corresponding output and gate electrodes, 30, 31 respectively, all being enclosed within a channel stopping region 32. The conductively connected CCD principle may be used to improve transfer efficiency by providing heavily doped opposite conductivity type fixed charge regions in the storage medium in the gaps between electrodes along the charge transfer paths, Fig. 6 (not shown). Also to prevent charge diffusing to an adjacent electrode of the same conductive path small strips of channel stopping regions (P++– type) may be provided as a buffer between the electrodes.

GB1946374A
1973-05-07
1974-05-03
Charge transfer devices

Expired

GB1439879A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US35759073A

1973-05-07
1973-05-07

Publications (1)

Publication Number
Publication Date

GB1439879A
true

GB1439879A
(en)

1976-06-16

Family
ID=23406239
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB1946374A
Expired

GB1439879A
(en)

1973-05-07
1974-05-03
Charge transfer devices

Country Status (9)

Country
Link

JP
(1)

JPS5017585A
(en)

BE
(1)

BE814545A
(en)

CA
(1)

CA999675A
(en)

DE
(1)

DE2421651A1
(en)

FR
(1)

FR2229143B1
(en)

GB
(1)

GB1439879A
(en)

IT
(1)

IT1010963B
(en)

NL
(1)

NL7406060A
(en)

SE
(1)

SE400136B
(en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

JPS5922416Y2
(en)

1978-08-04
1984-07-04
東洋紡績株式会社

hot carpet

1974

1974-01-15
CA
CA190,175A
patent/CA999675A/en
not_active
Expired

1974-04-25
SE
SE7405575A
patent/SE400136B/en
unknown

1974-05-02
IT
IT5073574A
patent/IT1010963B/en
active

1974-05-03
GB
GB1946374A
patent/GB1439879A/en
not_active
Expired

1974-05-03
BE
BE143917A
patent/BE814545A/en
unknown

1974-05-04
DE
DE19742421651
patent/DE2421651A1/en
not_active
Withdrawn

1974-05-06
FR
FR7415632A
patent/FR2229143B1/fr
not_active
Expired

1974-05-06
NL
NL7406060A
patent/NL7406060A/xx
not_active
Application Discontinuation

1974-05-07
JP
JP4983574A
patent/JPS5017585A/ja
active
Pending

Also Published As

Publication number
Publication date

FR2229143A1
(en)

1974-12-06

NL7406060A
(en)

1974-11-11

BE814545A
(en)

1974-09-02

IT1010963B
(en)

1977-01-20

CA999675A
(en)

1976-11-09

SE400136B
(en)

1978-03-13

FR2229143B1
(en)

1978-11-17

JPS5017585A
(en)

1975-02-24

DE2421651A1
(en)

1974-11-21

Información de contacto