GB1442930A – Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals
– Google Patents
GB1442930A – Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals
– Google Patents
Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals
Info
Publication number
GB1442930A
GB1442930A
GB3955974A
GB3955974A
GB1442930A
GB 1442930 A
GB1442930 A
GB 1442930A
GB 3955974 A
GB3955974 A
GB 3955974A
GB 3955974 A
GB3955974 A
GB 3955974A
GB 1442930 A
GB1442930 A
GB 1442930A
Authority
GB
United Kingdom
Prior art keywords
manufacture
shaped
conductive silicon
gallium
germanium
Prior art date
1974-02-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3955974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1974-02-18
Filing date
1974-09-11
Publication date
1976-07-14
1974-09-11
Application filed by Siemens AG
filed
Critical
Siemens AG
1976-07-14
Publication of GB1442930A
publication
Critical
patent/GB1442930A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
title
abstract
3
229910052710
silicon
Inorganic materials
0.000
title
abstract
3
239000010703
silicon
Substances
0.000
title
abstract
3
238000004519
manufacturing process
Methods
0.000
title
abstract
2
GYHNNYVSQQEPJS-UHFFFAOYSA-N
Gallium
Chemical compound
[Ga]
GYHNNYVSQQEPJS-UHFFFAOYSA-N
0.000
abstract
2
238000006243
chemical reaction
Methods
0.000
abstract
2
229910052733
gallium
Inorganic materials
0.000
abstract
2
229910052732
germanium
Inorganic materials
0.000
abstract
2
GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound
[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
2
239000003795
chemical substances by application
Substances
0.000
abstract
1
239000013078
crystal
Substances
0.000
abstract
1
230000005855
radiation
Effects
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
238000004857
zone melting
Methods
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/26—Bombardment with radiation
H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
G—PHYSICS
G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
G21K5/00—Irradiation devices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Abstract
1442930 Semiconductor device manufacture SIEMENS AG 11 September 1974 [18 Feb 1974] 39559/74 Heading H1K A uniformly gallium doped P-type silicon monocrystal for use in radiation detectors is prepared by producing a germanium doped silicon body, converting it to monocrystalline form and then bombarding it with thermal neutrons to convert some of the germanium to gallium by the nuclear reaction Typically the body, containing up to 10 vol. per cent Ge, is converted to monocrystal by zone melting using a 111, 100 or 115 oriented seed crystal, is rotated about an axis during bombardment and is annealed at > 1000‹ C. for over 1 hour after bombardment if such treatment does not occur in subsequent processing of the body to form devices. Other incidental nuclear reactions occurring are specified and two examples are described in detail.
GB3955974A
1974-02-18
1974-09-11
Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals
Expired
GB1442930A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE2407697A
DE2407697C3
(en)
1974-02-18
1974-02-18
Process for producing a homogeneously Ga-doped silicon single crystal
Publications (1)
Publication Number
Publication Date
GB1442930A
true
GB1442930A
(en)
1976-07-14
Family
ID=5907718
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB3955974A
Expired
GB1442930A
(en)
1974-02-18
1974-09-11
Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals
Country Status (12)
Country
Link
JP
(1)
JPS5329572B2
(en)
AT
(1)
AT339379B
(en)
BE
(1)
BE816719A
(en)
DE
(1)
DE2407697C3
(en)
DK
(1)
DK658274A
(en)
FR
(1)
FR2261055B1
(en)
GB
(1)
GB1442930A
(en)
IT
(1)
IT1031627B
(en)
NL
(1)
NL7410745A
(en)
PL
(1)
PL91842B1
(en)
SU
(1)
SU717999A3
(en)
ZA
(1)
ZA746269B
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US9799736B1
(en)
2016-07-20
2017-10-24
International Business Machines Corporation
High acceptor level doping in silicon germanium
1974
1974-02-18
DE
DE2407697A
patent/DE2407697C3/en
not_active
Expired
1974-06-21
BE
BE145761A
patent/BE816719A/en
unknown
1974-08-09
NL
NL7410745A
patent/NL7410745A/en
not_active
Application Discontinuation
1974-08-14
AT
AT667874A
patent/AT339379B/en
active
1974-09-11
GB
GB3955974A
patent/GB1442930A/en
not_active
Expired
1974-09-25
PL
PL1974174329A
patent/PL91842B1/pl
unknown
1974-10-02
ZA
ZA00746269A
patent/ZA746269B/en
unknown
1974-12-17
DK
DK658274A
patent/DK658274A/da
unknown
1975
1975-02-11
IT
IT20138/75A
patent/IT1031627B/en
active
1975-02-12
JP
JP1777675A
patent/JPS5329572B2/ja
not_active
Expired
1975-02-17
FR
FR7504804A
patent/FR2261055B1/fr
not_active
Expired
1975-02-17
SU
SU752106377A
patent/SU717999A3/en
active
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US9799736B1
(en)
2016-07-20
2017-10-24
International Business Machines Corporation
High acceptor level doping in silicon germanium
US10361306B2
(en)
2016-07-20
2019-07-23
International Business Machines Corporation
High acceptor level doping in silicon germanium
Also Published As
Publication number
Publication date
DE2407697A1
(en)
1975-09-18
ZA746269B
(en)
1975-10-29
DE2407697B2
(en)
1978-04-06
JPS50120253A
(en)
1975-09-20
IT1031627B
(en)
1979-05-10
BE816719A
(en)
1974-10-16
DK658274A
(en)
1975-10-27
DE2407697C3
(en)
1978-11-30
AT339379B
(en)
1977-10-10
NL7410745A
(en)
1975-08-20
JPS5329572B2
(en)
1978-08-22
FR2261055A1
(en)
1975-09-12
FR2261055B1
(en)
1979-01-05
ATA667874A
(en)
1977-02-15
PL91842B1
(en)
1977-03-31
SU717999A3
(en)
1980-02-25
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Legal Events
Date
Code
Title
Description
1976-11-24
PS
Patent sealed
1986-05-08
PCNP
Patent ceased through non-payment of renewal fee
