GB1447604A – Ferroelectric memory device
– Google Patents
GB1447604A – Ferroelectric memory device
– Google Patents
Ferroelectric memory device
Info
Publication number
GB1447604A
GB1447604A
GB1541274A
GB1541274A
GB1447604A
GB 1447604 A
GB1447604 A
GB 1447604A
GB 1541274 A
GB1541274 A
GB 1541274A
GB 1541274 A
GB1541274 A
GB 1541274A
GB 1447604 A
GB1447604 A
GB 1447604A
Authority
GB
United Kingdom
Prior art keywords
memory device
substrate
layer
april
application
Prior art date
1973-04-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1541274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-04-24
Filing date
1974-04-08
Publication date
1976-08-25
1974-04-08
Application filed by Westinghouse Electric Corp
filed
Critical
Westinghouse Electric Corp
1976-08-25
Publication of GB1447604A
publication
Critical
patent/GB1447604A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
Abstract
1447604 Ferroelectric memory device WESTINGHOUSE ELECTRIC CORP 8 April 1974 [24 April 1973] 15412/74 Heading H1K A memory device comprises an otherwise conventional IGFET having an electrode on the substrate and in which the gate insulation extending between the diffused source and drain regions 12, 14 (Fig. 1) consists of a deposited layer of ferroelectric material. In the embodiment the substrate 10 is of 10-40 ohm.cm. P-type silicon and the gate insulation a 3-4 Á layer of bismuth titanate deposited by RF sputtering at 730 C. After application of a 1 millisecond positive pulse between the aluminium gate and the substrate electrode the device remains cut-off but the conductive inversion layer 56 is restored by application of a negative pulse of similar magnitude.
GB1541274A
1973-04-24
1974-04-08
Ferroelectric memory device
Expired
GB1447604A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US00354022A
US3832700A
(en)
1973-04-24
1973-04-24
Ferroelectric memory device
Publications (1)
Publication Number
Publication Date
GB1447604A
true
GB1447604A
(en)
1976-08-25
Family
ID=23391570
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1541274A
Expired
GB1447604A
(en)
1973-04-24
1974-04-08
Ferroelectric memory device
Country Status (5)
Country
Link
US
(1)
US3832700A
(en)
JP
(1)
JPS5015446A
(en)
DE
(1)
DE2418808A1
(en)
FR
(1)
FR2227598B1
(en)
GB
(1)
GB1447604A
(en)
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1978-12-15
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Complementary metal-ferroelectric semiconductor transistor structure and a matrix of such transistor structure for performing a comparison
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Non-volatile memory circuit using ferroelectric capacitor storage element
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Ferroelectric memory device
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Manufacturing method of semiconductor device
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Semiconductor device
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NON-VOLATILE MEMORY CELL OF THE SEMICONDUCTOR METAL-FERROELECTRIC TYPE.
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1992-08-24
1995-04-10
東京工業大学長
Self-learning multiply-accumulate operation circuit element and circuit
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Symetrix Corporation
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1997-09-09
Olympus Optical Co., Ltd.
Method of driving ferroelectric gate transistor memory cell
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Olympus Optical Co Ltd
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Goller; Stuart E.
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1995-01-03
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1995-06-19
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University Of Houston
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1996-06-14
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High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same
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Sharp Laboratories Of America, Inc.
Method of making ferroelectric memory cell for VLSI RAM array
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One transistor ferroelectric memory cell and method of making the same
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Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2791761A
(en)
*
1955-02-18
1957-05-07
Bell Telephone Labor Inc
Electrical switching and storage
BE545324A
(en)
*
1955-02-18
JPS4844585B1
(en)
*
1969-04-12
1973-12-25
JPS49131646A
(en)
*
1973-04-20
1974-12-17
1973
1973-04-24
US
US00354022A
patent/US3832700A/en
not_active
Expired – Lifetime
1974
1974-04-08
GB
GB1541274A
patent/GB1447604A/en
not_active
Expired
1974-04-19
DE
DE2418808A
patent/DE2418808A1/en
active
Pending
1974-04-24
FR
FR7414194A
patent/FR2227598B1/fr
not_active
Expired
1974-04-24
JP
JP49045621A
patent/JPS5015446A/ja
active
Pending
Also Published As
Publication number
Publication date
FR2227598B1
(en)
1979-06-15
FR2227598A1
(en)
1974-11-22
US3832700A
(en)
1974-08-27
DE2418808A1
(en)
1974-10-31
JPS5015446A
(en)
1975-02-18
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Legal Events
Date
Code
Title
Description
1977-01-26
PS
Patent sealed [section 19, patents act 1949]
1979-11-28
PCNP
Patent ceased through non-payment of renewal fee
