GB1456866A – Semiconductor display-devices
– Google Patents
GB1456866A – Semiconductor display-devices
– Google Patents
Semiconductor display-devices
Info
Publication number
GB1456866A
GB1456866A
GB5847673A
GB5847673A
GB1456866A
GB 1456866 A
GB1456866 A
GB 1456866A
GB 5847673 A
GB5847673 A
GB 5847673A
GB 5847673 A
GB5847673 A
GB 5847673A
GB 1456866 A
GB1456866 A
GB 1456866A
Authority
GB
United Kingdom
Prior art keywords
layer
resistance
resistance layer
gaas
atoms
Prior art date
1972-12-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5847673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1972-12-19
Filing date
1973-12-18
Publication date
1976-12-01
1973-12-18
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd
1976-12-01
Publication of GB1456866A
publication
Critical
patent/GB1456866A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
H05B33/00—Electroluminescent light sources
H05B33/12—Light sources with substantially two-dimensional radiating surfaces
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L33/0004—Devices characterised by their operation
H01L33/0041—Devices characterised by their operation characterised by field-effect operation
Abstract
1456866 Electroluminescence PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 18 Dec 1973 [19 Dec 1972] 58476/73 Heading C4S [Also in Division H1] An EL device comprises opposite conductivity type regions, 1, 2, transparent insulator layer 3, transparent elongate resistance layer 4, and means including a non-rectifying contact at at least one end of the resistance layer whereby a signal voltage may create a p.d. between layer 4 at one end, and the second region, and a field gradient in the longitudinal direction, in the part of layer 4 below the resistance layer. «Elongate resistance layer» is defined as having a high average length to width ratio, e.g. 10 : 1. The device provides an analogue display in which at least one dimension of the luminous surface varies according to the measured quantity. The dimensional variation of the luminous length may be inversely proportional to the applied voltage or follow a different rule according layer 3 shape (e.g. with curved edges (20), Fig. 4, not shown). Resistance layer 4 may be a thin metal layer, or a deposit with regularly distributed apertures to remove observable field irregularities, and may also be of SnO 2 or In 2 O 3 . Permanently illuminated border regions such as in the Fig. 4 device, may be masked. The Fig. 5 device (not shown) includes resistance layer (23) whose thickness resistance is less than its length resistance and side contact (25). Fig. 6 (not shown) includes end contact (45) to the second region, and Fig. 7 (not shown) two end contacts (55) (59) to the second region. In fabrication, epitaxial or diffusion techniques may be employed with III-V type compounds. Also a GaAs : GaAlAs heterojunction is instanced. In an example, Te doped (5. 10
GB5847673A
1972-12-19
1973-12-18
Semiconductor display-devices
Expired
GB1456866A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
FR7245209A
FR2210878B1
(en)
1972-12-19
1972-12-19
Publications (1)
Publication Number
Publication Date
GB1456866A
true
GB1456866A
(en)
1976-12-01
Family
ID=9108932
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB5847673A
Expired
GB1456866A
(en)
1972-12-19
1973-12-18
Semiconductor display-devices
Country Status (7)
Country
Link
US
(1)
US3928864A
(en)
JP
(1)
JPS5212556B2
(en)
CA
(1)
CA1011441A
(en)
DE
(1)
DE2362459A1
(en)
FR
(1)
FR2210878B1
(en)
GB
(1)
GB1456866A
(en)
IT
(1)
IT1001147B
(en)
Families Citing this family (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL7407811A
(en)
*
1974-06-12
1975-12-16
Philips Nv
PHOTO DIODE.
JPH0645106B2
(en)
*
1989-02-08
1994-06-15
株式会社日立製作所
Bolt fastening method
US6653662B2
(en)
*
2000-11-01
2003-11-25
Matsushita Electric Industrial Co., Ltd.
Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3388255A
(en)
*
1964-06-22
1968-06-11
George A. May
Solid-state voltage-scanned device including long narrow p-n junction material with photoconductors thereon
US3492548A
(en)
*
1967-09-25
1970-01-27
Rca Corp
Electroluminescent device and method of operating
US3558897A
(en)
*
1969-01-27
1971-01-26
George A May
P-n junction scanning device having photo-conductors disposed on device with field effect layers for controlling position of scanning spot
1972
1972-12-19
FR
FR7245209A
patent/FR2210878B1/fr
not_active
Expired
1973
1973-12-15
DE
DE2362459A
patent/DE2362459A1/en
not_active
Withdrawn
1973-12-18
IT
IT42946/73A
patent/IT1001147B/en
active
1973-12-18
CA
CA188,690A
patent/CA1011441A/en
not_active
Expired
1973-12-18
US
US425725A
patent/US3928864A/en
not_active
Expired – Lifetime
1973-12-18
GB
GB5847673A
patent/GB1456866A/en
not_active
Expired
1973-12-19
JP
JP14293873A
patent/JPS5212556B2/ja
not_active
Expired
Also Published As
Publication number
Publication date
CA1011441A
(en)
1977-05-31
JPS49102283A
(en)
1974-09-27
DE2362459A1
(en)
1974-06-20
IT1001147B
(en)
1976-04-20
JPS5212556B2
(en)
1977-04-07
FR2210878A1
(en)
1974-07-12
FR2210878B1
(en)
1976-04-23
US3928864A
(en)
1975-12-23
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Legal Events
Date
Code
Title
Description
1977-04-14
PS
Patent sealed [section 19, patents act 1949]
1982-07-21
PCNP
Patent ceased through non-payment of renewal fee
