GB1487936A – Negative electron beam resist
– Google Patents
GB1487936A – Negative electron beam resist
– Google Patents
Negative electron beam resist
Info
Publication number
GB1487936A
GB1487936A
GB4765274A
GB4765274A
GB1487936A
GB 1487936 A
GB1487936 A
GB 1487936A
GB 4765274 A
GB4765274 A
GB 4765274A
GB 4765274 A
GB4765274 A
GB 4765274A
GB 1487936 A
GB1487936 A
GB 1487936A
Authority
GB
United Kingdom
Prior art keywords
electron beam
beam resist
negative electron
nov
electron
Prior art date
1973-11-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4765274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-11-05
Filing date
1974-11-04
Publication date
1977-10-05
1974-11-04
Application filed by Texas Instruments Inc
filed
Critical
Texas Instruments Inc
1977-10-05
Publication of GB1487936A
publication
Critical
patent/GB1487936A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/004—Photosensitive materials
G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Abstract
1487936 Electron-sensitive materials TEXAS INSTRUMENTS Inc 4 Nov 1974 [5 Nov 1973(2)] 47652/74 Heading G2C An electron-sensitive material comprising polyvinylidene fluoride or a copolymer of tetrafluoroethylene with either vinylidene fluoride or with chlorotrifluoroethylene on a support is imagewise exposed to cross-link the exposed areas and then developed by dissolving the unexposed areas, e.g. with a ketone. The developed resist may be baked for 30 minutes at 180‹C to improve adhesion.
GB4765274A
1973-11-05
1974-11-04
Negative electron beam resist
Expired
GB1487936A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US41293073A
1973-11-05
1973-11-05
US41293373A
1973-11-05
1973-11-05
Publications (1)
Publication Number
Publication Date
GB1487936A
true
GB1487936A
(en)
1977-10-05
Family
ID=27021973
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4765274A
Expired
GB1487936A
(en)
1973-11-05
1974-11-04
Negative electron beam resist
Country Status (4)
Country
Link
JP
(1)
JPS576573B2
(en)
DE
(1)
DE2446930A1
(en)
FR
(1)
FR2250139B1
(en)
GB
(1)
GB1487936A
(en)
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US6593058B1
(en)
1998-09-23
2003-07-15
E. I. Du Pont De Nemours And Company
Photoresists, polymers and processes for microlithography
WO2003087938A2
(en)
*
2002-04-09
2003-10-23
Quantiscript Inc.
Plasma polymerized electron beam resist
US6849377B2
(en)
1998-09-23
2005-02-01
E. I. Du Pont De Nemours And Company
Photoresists, polymers and processes for microlithography
Families Citing this family (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4171417A
(en)
*
1978-10-30
1979-10-16
Calgon Corporation
Polymers with improved solvent holdout in electroconductive paper
NL7906932A
(en)
*
1979-09-18
1981-03-20
Philips Nv
NEGATIVE RESIST MATERIAL, RESIST MATERIAL CARRIER AND METHOD FOR APPLYING A LAYER BY PATTERN.
EP0240726A3
(en)
*
1986-03-05
1987-12-09
Daikin Industries, Limited
Resist material
1974
1974-09-25
JP
JP11039974A
patent/JPS576573B2/ja
not_active
Expired
1974-10-01
DE
DE19742446930
patent/DE2446930A1/en
not_active
Withdrawn
1974-10-30
FR
FR7436260A
patent/FR2250139B1/fr
not_active
Expired
1974-11-04
GB
GB4765274A
patent/GB1487936A/en
not_active
Expired
Cited By (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US6593058B1
(en)
1998-09-23
2003-07-15
E. I. Du Pont De Nemours And Company
Photoresists, polymers and processes for microlithography
US6849377B2
(en)
1998-09-23
2005-02-01
E. I. Du Pont De Nemours And Company
Photoresists, polymers and processes for microlithography
US7276323B2
(en)
1998-09-23
2007-10-02
E. I. Du Pont De Nemours And Company
Photoresists, polymers and processes for microlithography
WO2003087938A2
(en)
*
2002-04-09
2003-10-23
Quantiscript Inc.
Plasma polymerized electron beam resist
US6855646B2
(en)
2002-04-09
2005-02-15
Quantiscript Inc.
Plasma polymerized electron beam resist
WO2003087938A3
(en)
*
2002-04-09
2005-02-17
Quantiscript Inc
Plasma polymerized electron beam resist
Also Published As
Publication number
Publication date
JPS576573B2
(en)
1982-02-05
JPS5073705A
(en)
1975-06-18
FR2250139A1
(en)
1975-05-30
DE2446930A1
(en)
1975-05-07
FR2250139B1
(en)
1980-06-27
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Legal Events
Date
Code
Title
Description
1978-02-15
PS
Patent sealed
1994-11-30
PE20
Patent expired after termination of 20 years
Effective date:
19941103
