AU1369383A

AU1369383A – Magnetic gas gate
– Google Patents

AU1369383A – Magnetic gas gate
– Google Patents
Magnetic gas gate

Info

Publication number
AU1369383A

AU1369383A
AU13693/83A
AU1369383A
AU1369383A
AU 1369383 A
AU1369383 A
AU 1369383A
AU 13693/83 A
AU13693/83 A
AU 13693/83A
AU 1369383 A
AU1369383 A
AU 1369383A
AU 1369383 A
AU1369383 A
AU 1369383A
Authority
AU
Australia
Prior art keywords
gas gate
magnetic gas
magnetic
gate
gas
Prior art date
1982-04-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
AU13693/83A
Other versions

AU554982B2
(en

Inventor
David Attilio Gattuso
Prem Nath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Energy Conversion Devices Inc

Original Assignee
Energy Conv Devices Inc
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1982-04-29
Filing date
1983-04-20
Publication date
1983-11-03

1983-04-20
Application filed by Energy Conv Devices Inc, Energy Conversion Devices Inc
filed
Critical
Energy Conv Devices Inc

1983-11-03
Publication of AU1369383A
publication
Critical
patent/AU1369383A/en

1986-09-11
Application granted
granted
Critical

1986-09-11
Publication of AU554982B2
publication
Critical
patent/AU554982B2/en

2003-04-20
Anticipated expiration
legal-status
Critical

Status
Ceased
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials

H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

C—CHEMISTRY; METALLURGY

C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL

C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL

C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

C23C16/54—Apparatus specially adapted for continuous coating

C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING

F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL

F16J—PISTONS; CYLINDERS; SEALINGS

F16J15/00—Sealings

F16J15/16—Sealings between relatively-moving surfaces

F16J15/168—Sealings between relatively-moving surfaces which permits material to be continuously conveyed

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices

H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier

H01L31/075—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials

H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE

Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/00—Energy generation through renewable energy sources

Y02E10/50—Photovoltaic [PV] energy

Y02E10/548—Amorphous silicon PV cells

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE

Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products

Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S118/00—Coating apparatus

Y10S118/90—Semiconductor vapor doping

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S277/00—Seal for a joint or juncture

Y10S277/906—Seal for article of indefinite length, e.g. strip, sheet

AU13693/83A
1982-04-29
1983-04-20
Magnetic gas gate

Ceased

AU554982B2
(en)

Applications Claiming Priority (2)

Application Number
Priority Date
Filing Date
Title

US372937

1982-04-29

US06/372,937

US4462332A
(en)

1982-04-29
1982-04-29
Magnetic gas gate

Publications (2)

Publication Number
Publication Date

AU1369383A
true

AU1369383A
(en)

1983-11-03

AU554982B2

AU554982B2
(en)

1986-09-11

Family
ID=23470245
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU13693/83A
Ceased

AU554982B2
(en)

1982-04-29
1983-04-20
Magnetic gas gate

Country Status (20)

Country
Link

US
(1)

US4462332A
(en)

JP
(1)

JPS58199571A
(en)

KR
(1)

KR840004831A
(en)

AU
(1)

AU554982B2
(en)

BR
(1)

BR8302060A
(en)

CA
(1)

CA1186787A
(en)

DE
(1)

DE3314375A1
(en)

EG
(1)

EG15947A
(en)

ES
(1)

ES8407248A1
(en)

FR
(1)

FR2527384B1
(en)

GB
(1)

GB2119406B
(en)

IE
(1)

IE54234B1
(en)

IL
(1)

IL68390A0
(en)

IN
(1)

IN158452B
(en)

IT
(1)

IT1173664B
(en)

MX
(1)

MX158211A
(en)

NL
(1)

NL8301437A
(en)

PH
(1)

PH19617A
(en)

SE
(1)

SE457357B
(en)

ZA
(1)

ZA832572B
(en)

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* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4537795A
(en)

*

1982-09-16
1985-08-27
Sovonics Solar Systems
Method for introducing sweep gases into a glow discharge deposition apparatus

JPS60119784A
(en)

*

1983-12-01
1985-06-27
Kanegafuchi Chem Ind Co Ltd
Manufacture of insulation metal base plate and device utilizing thereof

US6784033B1
(en)

1984-02-15
2004-08-31
Semiconductor Energy Laboratory Co., Ltd.
Method for the manufacture of an insulated gate field effect semiconductor device

US4678679A
(en)

*

1984-06-25
1987-07-07
Energy Conversion Devices, Inc.
Continuous deposition of activated process gases

JPS6179755A
(en)

*

1984-09-28
1986-04-23
Nisshin Steel Co Ltd
Continuous plating device in common use for hot dipping and vacuum deposition plating

US6113701A
(en)

*

1985-02-14
2000-09-05
Semiconductor Energy Laboratory Co., Ltd.
Semiconductor device, manufacturing method, and system

US4664951A
(en)

*

1985-07-31
1987-05-12
Energy Conversion Devices, Inc.
Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration

US6230650B1
(en)

1985-10-14
2001-05-15
Semiconductor Energy Laboratory Co., Ltd.
Microwave enhanced CVD system under magnetic field

US6673722B1
(en)

1985-10-14
2004-01-06
Semiconductor Energy Laboratory Co., Ltd.
Microwave enhanced CVD system under magnetic field

US4829189A
(en)

*

1986-07-18
1989-05-09
Sando Iron Works Co., Ltd.
Apparatus for low-temperature plasma treatment of sheet material

JPH0193129A
(en)

*

1987-10-02
1989-04-12
Mitsubishi Electric Corp
Chemical vapor growth device

JPH02291072A
(en)

*

1989-04-25
1990-11-30
Koufu Nippon Denki Kk
Processing device for bill and check

US5271631A
(en)

*

1989-05-31
1993-12-21
Atsushi Yokouchi
Magnetic fluid seal apparatus

JPH0419081A
(en)

*

1990-05-15
1992-01-23
Seiko Instr Inc
In-vacuum conveyor robot

JP2975151B2
(en)

*

1991-03-28
1999-11-10
キヤノン株式会社

Continuous production equipment for semiconductor devices

US5157851A
(en)

*

1991-10-02
1992-10-27
United Solar Systems Corporation
Pinching gate valve

US5374313A
(en)

*

1992-06-24
1994-12-20
Energy Conversion Devices, Inc.
Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure

US5946587A
(en)

*

1992-08-06
1999-08-31
Canon Kabushiki Kaisha
Continuous forming method for functional deposited films

DE9407482U1
(en)

*

1994-05-05
1994-10-06
Leybold Ag

Functional device for a vacuum system for the treatment of disc-shaped workpieces

JPH08194847A
(en)

*

1995-01-20
1996-07-30
Chugoku Nippon Denki Software Kk
Automatic bill issuing device

US20060096536A1
(en)

*

2004-11-10
2006-05-11
Daystar Technologies, Inc.
Pressure control system in a photovoltaic substrate deposition apparatus

TW200633241A
(en)

*

2004-11-10
2006-09-16
Daystar Technologies Inc
Vertical production of photovoltaic devices

JP2009046710A
(en)

*

2007-08-16
2009-03-05
Fuji Electric Systems Co Ltd
Continuous manufacturing apparatus of semiconductor device

US7972898B2
(en)

2007-09-26
2011-07-05
Eastman Kodak Company
Process for making doped zinc oxide

KR20090088056A
(en)

*

2008-02-14
2009-08-19
삼성전기주식회사
Gas supplying unit and chemical vapor deposition apparatus

DE102008030679B4
(en)

*

2008-04-17
2016-01-28
Von Ardenne Gmbh

Device for the diffusion treatment of workpieces

EP2292339A1
(en)

*

2009-09-07
2011-03-09
Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO
Coating method and coating apparatus

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Assignee
Title

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(en)

*

1953-05-15
1960-02-16
Heraeus Gmbh W C
Coating apparatus

GB763541A
(en)

*

1953-09-29
1956-12-12
Siemens Ag
Improvements in or relating to apparatus for the continuous treatment in vacuo of wire or other strip-like material

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1962-12-31
1966-01-04
Nat Res Corp
Apparatus for depositing coatings of tin on a flexible substrate

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1964-12-28
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Hermsdorf Keramik Veb

Device for the continuous production and processing of electronic components under vacuum, in particular for the vapor deposition of layers

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1966-05-19
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British Iron Steel Research
Formation of Polymer Coatings on Substrates.

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Sealing apparatus for transport of material between regions at different pressures

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Apparatus and method for plasma generation and material treatment with electromagnetic radiation

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Electricity Council
Continuous heat treatment of wire or rod

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Texas Instruments Incorporated
Continuous chemical vapor deposition reactor

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Armstrong Cork Company
Plasma-process vacuum seal

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IMPROVEMENTS IN METHODS AND DEVICES FOR DOPING SEMICONDUCTOR MATERIALS

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1977-11-19
1979-06-15
Dornier Gmbh Lindauer

SEALING DEVICE INTENDED TO PREVENT OXIDIZING, EXPLOSIVE OR TOXIC GASES FROM ESCAPING FROM A TUNNEL FOR TREATMENT OF BAND MATERIAL

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(en)

*

1979-10-12
1982-08-31
General Engineering Radcliffe 1979 Limited
Vacuum chamber seals

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1980-05-19
1983-08-23
Energy Conversion Devices, Inc.
Method of making p-doped silicon films

JPS5736437A
(en)

*

1980-08-14
1982-02-27
Fuji Photo Film Co Ltd
Producing device of magnetic recording medium

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(en)

*

1981-03-16
1983-06-28
Energy Conversion Devices, Inc.
Apparatus for regulating substrate temperature in a continuous plasma deposition process

1982

1982-04-29
US
US06/372,937
patent/US4462332A/en
not_active
Expired – Lifetime

1983

1983-04-06
IE
IE782/83A
patent/IE54234B1/en
not_active
IP Right Cessation

1983-04-13
ZA
ZA832572A
patent/ZA832572B/en
unknown

1983-04-14
IL
IL68390A
patent/IL68390A0/en
unknown

1983-04-20
EG
EG242/83A
patent/EG15947A/en
active

1983-04-20
AU
AU13693/83A
patent/AU554982B2/en
not_active
Ceased

1983-04-20
BR
BR8302060A
patent/BR8302060A/en
unknown

1983-04-21
IT
IT20732/83A
patent/IT1173664B/en
active

1983-04-21
DE
DE19833314375
patent/DE3314375A1/en
active
Granted

1983-04-21
FR
FR8306541A
patent/FR2527384B1/en
not_active
Expired

1983-04-22
IN
IN478/CAL/83A
patent/IN158452B/en
unknown

1983-04-22
ES
ES521774A
patent/ES8407248A1/en
not_active
Expired

1983-04-22
NL
NL8301437A
patent/NL8301437A/en
not_active
Application Discontinuation

1983-04-22
PH
PH28809A
patent/PH19617A/en
unknown

1983-04-22
SE
SE8302275A
patent/SE457357B/en
not_active
IP Right Cessation

1983-04-22
JP
JP58071319A
patent/JPS58199571A/en
active
Granted

1983-04-22
MX
MX197027A
patent/MX158211A/en
unknown

1983-04-25
GB
GB08311173A
patent/GB2119406B/en
not_active
Expired

1983-04-29
CA
CA000426993A
patent/CA1186787A/en
not_active
Expired

1983-04-29
KR
KR1019830001828A
patent/KR840004831A/en
not_active
Application Discontinuation

Also Published As

Publication number
Publication date

NL8301437A
(en)

1983-11-16

SE457357B
(en)

1988-12-19

PH19617A
(en)

1986-05-30

GB2119406B
(en)

1986-01-29

ES521774A0
(en)

1984-04-01

IN158452B
(en)

1986-11-22

ES8407248A1
(en)

1984-04-01

DE3314375A1
(en)

1983-11-03

SE8302275D0
(en)

1983-04-22

CA1186787A
(en)

1985-05-07

DE3314375C2
(en)

1992-04-09

IT8320732D0
(en)

1983-04-21

ZA832572B
(en)

1984-01-25

JPS58199571A
(en)

1983-11-19

IT8320732A1
(en)

1984-10-21

FR2527384B1
(en)

1988-07-22

IT1173664B
(en)

1987-06-24

IE54234B1
(en)

1989-07-19

EG15947A
(en)

1986-09-30

GB2119406A
(en)

1983-11-16

IL68390A0
(en)

1983-07-31

US4462332A
(en)

1984-07-31

KR840004831A
(en)

1984-10-24

IE830782L
(en)

1983-10-29

JPS649746B2
(en)

1989-02-20

MX158211A
(en)

1989-01-16

GB8311173D0
(en)

1983-06-02

BR8302060A
(en)

1983-12-27

FR2527384A1
(en)

1983-11-25

SE8302275L
(en)

1983-10-30

AU554982B2
(en)

1986-09-11

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Legal Events

Date
Code
Title
Description

2002-11-21
MK14
Patent ceased section 143(a) (annual fees not paid) or expired

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