GB2004689B - Creación de Inventos y Patentes con Inteligencia Artificial

GB2004689B – Electronbeam programmable semiconductor device structure
– Google Patents

GB2004689B – Electronbeam programmable semiconductor device structure
– Google Patents
Electronbeam programmable semiconductor device structure

Info

Publication number
GB2004689B

GB2004689B
GB7833832A
GB7833832A
GB2004689B
GB 2004689 B
GB2004689 B
GB 2004689B
GB 7833832 A
GB7833832 A
GB 7833832A
GB 7833832 A
GB7833832 A
GB 7833832A
GB 2004689 B
GB2004689 B
GB 2004689B
Authority
GB
United Kingdom
Prior art keywords
electronbeam
semiconductor device
device structure
programmable semiconductor
programmable
Prior art date
1977-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB7833832A
Other versions

GB2004689A
(en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Motorola Solutions Inc

Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1977-09-19
Filing date
1978-08-18
Publication date
1982-05-12

1978-08-18
Application filed by Motorola Inc
filed
Critical
Motorola Inc

1979-04-04
Publication of GB2004689A
publication
Critical
patent/GB2004689A/en

1982-05-12
Application granted
granted
Critical

1982-05-12
Publication of GB2004689B
publication
Critical
patent/GB2004689B/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/26—Bombardment with radiation

H01L21/263—Bombardment with radiation with high-energy radiation

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00

G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C5/00—Details of stores covered by group G11C11/00

G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring

G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals

GB7833832A
1977-09-19
1978-08-18
Electronbeam programmable semiconductor device structure

Expired

GB2004689B
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US05/834,081

US4190849A
(en)

1977-09-19
1977-09-19
Electronic-beam programmable semiconductor device structure

Publications (2)

Publication Number
Publication Date

GB2004689A

GB2004689A
(en)

1979-04-04

GB2004689B
true

GB2004689B
(en)

1982-05-12

Family
ID=25266062
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB7833832A
Expired

GB2004689B
(en)

1977-09-19
1978-08-18
Electronbeam programmable semiconductor device structure

Country Status (9)

Country
Link

US
(1)

US4190849A
(en)

JP
(1)

JPS5454586A
(en)

DE
(1)

DE2840577A1
(en)

FR
(1)

FR2403649A1
(en)

GB
(1)

GB2004689B
(en)

HK
(1)

HK66384A
(en)

MY
(1)

MY8500490A
(en)

NL
(1)

NL7809449A
(en)

SG
(1)

SG18084G
(en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE3032295A1
(en)

1980-08-27
1982-04-01
Siemens AG, 1000 Berlin und 8000 München

MONOLITHICALLY INTEGRATED FIXED MEMORY

DE3032333A1
(en)

1980-08-27
1982-04-22
Siemens AG, 1000 Berlin und 8000 München

MONOLITHIC STATIC STORAGE CELL AND METHOD FOR THEIR OPERATION

DE3032306A1
(en)

1980-08-27
1982-04-08
Siemens AG, 1000 Berlin und 8000 München

MONOLITHICALLY INTEGRATED CIRCUIT WITH SWITCHABLE PARTS

US4473836A
(en)

1982-05-03
1984-09-25
Dalsa Inc.
Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays

JPS6273653A
(en)

1985-09-26
1987-04-04
Mitsubishi Electric Corp
Construction of capacitive circuit

WO2010029618A1
(en)

2008-09-10
2010-03-18
株式会社アドバンテスト
Memory device, method for manufacturing memory device, and method for writing data

US11688586B2
(en)

2018-08-30
2023-06-27
Tokyo Electron Limited
Method and apparatus for plasma processing

Family Cites Families (10)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3500142A
(en)

1967-06-05
1970-03-10
Bell Telephone Labor Inc
Field effect semiconductor apparatus with memory involving entrapment of charge carriers

US3573753A
(en)

1968-08-01
1971-04-06
Gen Electric
Information storage and retrieval employing an electron beam

US3886530A
(en)

1969-06-02
1975-05-27
Massachusetts Inst Technology
Signal storage device

US3660819A
(en)

1970-06-15
1972-05-02
Intel Corp
Floating gate transistor and method for charging and discharging same

US3721962A
(en)

1970-08-03
1973-03-20
Ncr
Beam accessed mos memory with beam reading,writing,and erasing

US3825946A
(en)

1971-01-15
1974-07-23
Intel Corp
Electrically alterable floating gate device and method for altering same

US3736571A
(en)

1971-02-10
1973-05-29
Micro Bit Corp
Method and system for improved operation of conductor-insulator-semiconductor capacitor memory having increased storage capability

US3761895A
(en)

1971-03-17
1973-09-25
Gen Electric
Method and apparatus for storing and reading out charge in an insulating layer

US4087795A
(en)

1974-09-20
1978-05-02
Siemens Aktiengesellschaft
Memory field effect storage device

US4079358A
(en)

1976-10-04
1978-03-14
Micro-Bit Corporation
Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same

1977

1977-09-19
US
US05/834,081
patent/US4190849A/en
not_active
Expired – Lifetime

1978

1978-08-18
GB
GB7833832A
patent/GB2004689B/en
not_active
Expired

1978-09-15
NL
NL7809449A
patent/NL7809449A/en
unknown

1978-09-18
JP
JP11447278A
patent/JPS5454586A/en
active
Pending

1978-09-18
DE
DE19782840577
patent/DE2840577A1/en
not_active
Withdrawn

1978-09-19
FR
FR7826862A
patent/FR2403649A1/fr
active
Pending

1984

1984-02-29
SG
SG180/84A
patent/SG18084G/en
unknown

1984-08-23
HK
HK663/84A
patent/HK66384A/en
unknown

1985

1985-12-30
MY
MY490/85A
patent/MY8500490A/en
unknown

Also Published As

Publication number
Publication date

MY8500490A
(en)

1985-12-31

JPS5454586A
(en)

1979-04-28

HK66384A
(en)

1984-08-31

GB2004689A
(en)

1979-04-04

DE2840577A1
(en)

1979-03-22

US4190849A
(en)

1980-02-26

NL7809449A
(en)

1979-03-21

FR2403649A1
(en)

1979-04-13

SG18084G
(en)

1985-03-08

Información de contacto