GB2020095A – Schottky barrier amorphous silicon solar cell
– Google Patents
GB2020095A – Schottky barrier amorphous silicon solar cell
– Google Patents
Schottky barrier amorphous silicon solar cell
Info
Publication number
GB2020095A
GB2020095A
GB7849183A
GB7849183A
GB2020095A
GB 2020095 A
GB2020095 A
GB 2020095A
GB 7849183 A
GB7849183 A
GB 7849183A
GB 7849183 A
GB7849183 A
GB 7849183A
GB 2020095 A
GB2020095 A
GB 2020095A
Authority
GB
United Kingdom
Prior art keywords
solar cell
amorphous silicon
silicon solar
schottky barrier
barrier amorphous
Prior art date
1978-04-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7849183A
Other versions
GB2020095B
(en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1978-04-28
Filing date
1978-12-20
Publication date
1979-11-07
1978-12-20
Application filed by RCA Corp
filed
Critical
RCA Corp
1979-11-07
Publication of GB2020095A
publication
Critical
patent/GB2020095A/en
1982-07-28
Application granted
granted
Critical
1982-07-28
Publication of GB2020095B
publication
Critical
patent/GB2020095B/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
229910021417
amorphous silicon
Inorganic materials
0.000
title
1
230000004888
barrier function
Effects
0.000
title
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/00—Energy generation through renewable energy sources
Y02E10/50—Photovoltaic [PV] energy
GB7849183A
1978-04-28
1978-12-20
Schottky barrier amorphous silicon solar cell
Expired
GB2020095B
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US05/901,256
US4163677A
(en)
1978-04-28
1978-04-28
Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
Publications (2)
Publication Number
Publication Date
GB2020095A
true
GB2020095A
(en)
1979-11-07
GB2020095B
GB2020095B
(en)
1982-07-28
Family
ID=25413829
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB7849183A
Expired
GB2020095B
(en)
1978-04-28
1978-12-20
Schottky barrier amorphous silicon solar cell
Country Status (9)
Country
Link
US
(1)
US4163677A
(en)
JP
(1)
JPS54143086A
(en)
CA
(1)
CA1113594A
(en)
DE
(1)
DE2854750C2
(en)
FR
(1)
FR2424634B1
(en)
GB
(1)
GB2020095B
(en)
HK
(1)
HK77986A
(en)
IT
(1)
IT1192597B
(en)
NL
(1)
NL7812588A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2127223A
(en)
*
1982-09-14
1984-04-04
Messerschmitt Boelkow Blohm
Infra-red light detector
Families Citing this family (61)
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Publication date
Assignee
Title
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1979-03-12
1980-04-29
Rca Corporation
Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
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1979-08-20
1981-08-04
Rca Corporation
Silicon MOS inductor
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1979-10-03
1984-03-29
極東開発工業株式会社
Tank top cover on tank truck
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1979-11-13
1981-06-12
Shunpei Yamazaki
Manufacture of photoelectric converter
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1979-12-03
1981-09-22
Exxon Research & Engineering Co.
Amorphous silicon MIS device
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1979-12-28
1981-02-17
Exxon Research & Engineering Co.
Gradient doping in amorphous silicon
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1979-12-28
1982-04-20
Bell Telephone Laboratories, Incorporated
High speed photodetector
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1980-12-03
1982-06-14
Kanegafuchi Chem Ind Co Ltd
Amorphous silicon type photoelectric tranducer
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1980-05-19
1983-08-23
Energy Conversion Devices, Inc.
Method of making p-doped silicon films
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1980-06-20
1981-09-29
International Business Machines Corporation
Amorphous-crystalline tandem solar cell
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1980-09-27
1982-04-09
FR2503457B1
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1981-03-31
1987-01-23
Rca Corp
SOLAR CELL SYSTEM CONNECTED IN SERIES ON A SINGLE SUBSTRATE
US4443651A
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1981-03-31
1984-04-17
Rca Corporation
Series connected solar cells on a single substrate
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1981-12-14
1983-04-12
Energy Conversion Devices, Inc.
Current enhanced photovoltaic device
DE3219606A1
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1982-05-25
1983-12-01
Siemens AG, 1000 Berlin und 8000 München
SCHOTTKY PERFORMANCE DIODE
DE3308269A1
(en)
*
1983-03-09
1984-09-13
Licentia Patent-Verwaltungs-Gmbh
SOLAR CELL
US4589733A
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1984-06-29
1986-05-20
Energy Conversion Devices, Inc.
Displays and subassemblies having improved pixel electrodes
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1985-04-02
1987-05-15
Thomson Csf
METHOD FOR PRODUCING NON-LINEAR CONTROL ELEMENTS FOR FLAT SCREEN FOR ELECTRO-OPTICAL VISUALIZATION AND FLAT SCREEN PERFORMED ACCORDING TO THIS METHOD
US5155565A
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1988-02-05
1992-10-13
Minnesota Mining And Manufacturing Company
Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US4954864A
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1988-12-13
1990-09-04
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
Millimeter-wave monolithic diode-grid frequency multiplier
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1989-06-21
1991-04-23
General Electric Company
Method for forming Schottky photodiodes
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1989-06-21
1991-01-01
General Electric Company
Schottky photodiode with silicide layer
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1990-04-20
1991-05-28
International Business Machines Corporation
Method of making metal-insulator-metal junction structures with adjustable barrier heights
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1997-07-28
2000-09-19
Bp Solarex
Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6077722A
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1998-07-14
2000-06-20
Bp Solarex
Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6111189A
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*
1998-07-28
2000-08-29
Bp Solarex
Photovoltaic module framing system with integral electrical raceways
US20030073302A1
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2001-10-12
2003-04-17
Reflectivity, Inc., A California Corporation
Methods for formation of air gap interconnects
US7645933B2
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*
2005-03-02
2010-01-12
Wisconsin Alumni Research Foundation
Carbon nanotube Schottky barrier photovoltaic cell
US20080047602A1
(en)
*
2006-08-22
2008-02-28
Guardian Industries Corp.
Front contact with high-function TCO for use in photovoltaic device and method of making same
US20080047603A1
(en)
*
2006-08-24
2008-02-28
Guardian Industries Corp.
Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US7964788B2
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*
2006-11-02
2011-06-21
Guardian Industries Corp.
Front electrode for use in photovoltaic device and method of making same
US20080105293A1
(en)
*
2006-11-02
2008-05-08
Guardian Industries Corp.
Front electrode for use in photovoltaic device and method of making same
US20080105299A1
(en)
*
2006-11-02
2008-05-08
Guardian Industries Corp.
Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8203073B2
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*
2006-11-02
2012-06-19
Guardian Industries Corp.
Front electrode for use in photovoltaic device and method of making same
US20080105298A1
(en)
*
2006-11-02
2008-05-08
Guardian Industries Corp.
Front electrode for use in photovoltaic device and method of making same
US8076571B2
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*
2006-11-02
2011-12-13
Guardian Industries Corp.
Front electrode for use in photovoltaic device and method of making same
US8012317B2
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*
2006-11-02
2011-09-06
Guardian Industries Corp.
Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080302414A1
(en)
*
2006-11-02
2008-12-11
Den Boer Willem
Front electrode for use in photovoltaic device and method of making same
US20080178932A1
(en)
*
2006-11-02
2008-07-31
Guardian Industries Corp.
Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8334452B2
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2007-01-08
2012-12-18
Guardian Industries Corp.
Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1
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*
2007-01-16
2008-07-17
Guardian Industries Corp.
Method of making TCO front electrode for use in photovoltaic device or the like
US20080223430A1
(en)
*
2007-03-14
2008-09-18
Guardian Industries Corp.
Buffer layer for front electrode structure in photovoltaic device or the like
US20080308146A1
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*
2007-06-14
2008-12-18
Guardian Industries Corp.
Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same
US7888594B2
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*
2007-11-20
2011-02-15
Guardian Industries Corp.
Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US20090194155A1
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*
2008-02-01
2009-08-06
Guardian Industries Corp.
Front electrode having etched surface for use in photovoltaic device and method of making same
US20090194157A1
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*
2008-02-01
2009-08-06
Guardian Industries Corp.
Front electrode having etched surface for use in photovoltaic device and method of making same
US8551558B2
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*
2008-02-29
2013-10-08
International Business Machines Corporation
Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures
US8022291B2
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*
2008-10-15
2011-09-20
Guardian Industries Corp.
Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US8742545B2
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*
2009-04-15
2014-06-03
Sunovel Suzhou Technologies Ltd.
Substrate strip plate structure for semiconductor device and method of manufacturing the same
US20110168252A1
(en)
*
2009-11-05
2011-07-14
Guardian Industries Corp.
Textured coating with etching-blocking layer for thin-film solar cells and/or methods of making the same
US20110186120A1
(en)
*
2009-11-05
2011-08-04
Guardian Industries Corp.
Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same
US8502066B2
(en)
*
2009-11-05
2013-08-06
Guardian Industries Corp.
High haze transparent contact including insertion layer for solar cells, and/or method of making the same
US8115097B2
(en)
*
2009-11-19
2012-02-14
International Business Machines Corporation
Grid-line-free contact for a photovoltaic cell
WO2011105430A1
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*
2010-02-23
2011-09-01
京セラ株式会社
Dopant material, semiconductor substrate, solar cell element, and process for production of dopant material
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2010-08-17
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株式会社東芝
Nonvolatile semiconductor memory device
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Nusola, Inc.
Structure for creating ohmic contact in semiconductor devices and methods for manufacture
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2013-03-15
2014-09-18
Nusola Inc.
Hybrid-transparent electrode assembly for photovoltaic cell manufacturing
US20140360584A1
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*
2013-06-07
2014-12-11
National Dong Hwa University
Manufacturing method of solar cell
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Infineon Technologies Ag
Method for processing a semiconductor surface
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Solar Junction Corporation
Via etch method for back contact multijunction solar cells
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Solar Junction Corporation
Surface mount solar cell with integrated coverglass
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Assignee
Title
IT1062510B
(en)
*
1975-07-28
1984-10-20
Rca Corp
SEMICONDUCTIVE DEVICE PRESENTING AN ACTIVE REGION OF AMORPHOUS SILICON
US4064521A
(en)
*
1975-07-28
1977-12-20
Rca Corporation
Semiconductor device having a body of amorphous silicon
CA1078078A
(en)
*
1976-03-22
1980-05-20
David E. Carlson
Schottky barrier semiconductor device and method of making same
US4196438A
(en)
*
1976-09-29
1980-04-01
Rca Corporation
Article and device having an amorphous silicon containing a halogen and method of fabrication
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(en)
*
1977-03-28
1985-07-12
Rca Corp
PHOTOVOLTAIC DEVICE WITH HIGH ABSORPTION EFFICIENCY
US4126150A
(en)
*
1977-03-28
1978-11-21
Rca Corporation
Photovoltaic device having increased absorption efficiency
US4117506A
(en)
*
1977-07-28
1978-09-26
Rca Corporation
Amorphous silicon photovoltaic device having an insulating layer
1978
1978-04-28
US
US05/901,256
patent/US4163677A/en
not_active
Expired – Lifetime
1978-10-30
CA
CA314,697A
patent/CA1113594A/en
not_active
Expired
1978-12-14
IT
IT30854/78A
patent/IT1192597B/en
active
1978-12-19
DE
DE2854750A
patent/DE2854750C2/en
not_active
Expired – Fee Related
1978-12-20
GB
GB7849183A
patent/GB2020095B/en
not_active
Expired
1978-12-22
JP
JP16089478A
patent/JPS54143086A/en
active
Granted
1978-12-22
FR
FR7836100A
patent/FR2424634B1/en
not_active
Expired
1978-12-27
NL
NL7812588A
patent/NL7812588A/en
not_active
Application Discontinuation
1986
1986-10-16
HK
HK779/86A
patent/HK77986A/en
unknown
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2127223A
(en)
*
1982-09-14
1984-04-04
Messerschmitt Boelkow Blohm
Infra-red light detector
Also Published As
Publication number
Publication date
IT1192597B
(en)
1988-04-20
DE2854750C2
(en)
1994-01-13
IT7830854D0
(en)
1978-12-14
HK77986A
(en)
1986-10-24
NL7812588A
(en)
1979-10-30
GB2020095B
(en)
1982-07-28
FR2424634B1
(en)
1985-10-18
CA1113594A
(en)
1981-12-01
JPS54143086A
(en)
1979-11-07
DE2854750A1
(en)
1979-11-08
FR2424634A1
(en)
1979-11-23
JPS6138870B2
(en)
1986-09-01
US4163677A
(en)
1979-08-07
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Legal Events
Date
Code
Title
Description
1994-08-17
PCNP
Patent ceased through non-payment of renewal fee
Effective date:
19931220
