AU2751184A – Photoelectric conversion device
– Google Patents
AU2751184A – Photoelectric conversion device
– Google Patents
Photoelectric conversion device
Info
Publication number
AU2751184A
AU2751184A
AU27511/84A
AU2751184A
AU2751184A
AU 2751184 A
AU2751184 A
AU 2751184A
AU 27511/84 A
AU27511/84 A
AU 27511/84A
AU 2751184 A
AU2751184 A
AU 2751184A
AU 2751184 A
AU2751184 A
AU 2751184A
Authority
AU
Australia
Prior art keywords
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
1983-04-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU27511/84A
Other versions
AU567558B2
(en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1983-04-29
Filing date
1984-04-30
Publication date
1984-11-01
1984-04-30
Application filed by Semiconductor Energy Laboratory Co Ltd
filed
Critical
Semiconductor Energy Laboratory Co Ltd
1984-11-01
Publication of AU2751184A
publication
Critical
patent/AU2751184A/en
1987-11-26
Application granted
granted
Critical
1987-11-26
Publication of AU567558B2
publication
Critical
patent/AU567558B2/en
2004-04-30
Anticipated expiration
legal-status
Critical
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L27/144—Devices controlled by radiation
H01L27/1446—Devices controlled by radiation in a repetitive configuration
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L27/144—Devices controlled by radiation
H01L27/146—Imager structures
H01L27/14643—Photodiode arrays; MOS imagers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
H01L31/036—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/0392—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
H01L31/036—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/0392—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
H01L31/03926—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
H01L31/042—PV modules or arrays of single PV cells
H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
H01L31/042—PV modules or arrays of single PV cells
H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/00—Energy generation through renewable energy sources
Y02E10/50—Photovoltaic [PV] energy
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/94—Laser ablative material removal
AU27511/84A
1983-04-29
1984-04-30
Photoelectric conversion device
Expired
AU567558B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
JP58-75713
1983-04-29
JP58075713A
JPS59201471A
(en)
1983-04-29
1983-04-29
Photoelectric conversion semiconductor device
Publications (2)
Publication Number
Publication Date
AU2751184A
true
AU2751184A
(en)
1984-11-01
AU567558B2
AU567558B2
(en)
1987-11-26
Family
ID=13584156
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU27511/84A
Expired
AU567558B2
(en)
1983-04-29
1984-04-30
Photoelectric conversion device
Country Status (5)
Country
Link
US
(2)
US4622432A
(en)
JP
(1)
JPS59201471A
(en)
AU
(1)
AU567558B2
(en)
GB
(1)
GB2143084B
(en)
IN
(1)
IN160092B
(en)
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Polymer webb substrate
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Combination photoelectric and ionization smoke detector
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Thin-film solar cell fabricated on a flexible metallic substrate
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Organic photoelectric converter
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Formation of solar cells on foil substrates
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Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
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2004-02-19
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Nanosolar, Inc.
High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
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2004-02-19
2012-12-11
Nanosolar, Inc.
High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
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*
2004-02-19
2007-07-19
Nanosolar, Inc.
High-throughput printing of semiconductor precursor layer from microflake particles
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2004-02-19
2009-10-20
Nanosolar, Inc.
Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
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2005-03-16
2009-10-20
Nanosolar, Inc.
Metallic dispersion
US20090032108A1
(en)
*
2007-03-30
2009-02-05
Craig Leidholm
Formation of photovoltaic absorber layers on foil substrates
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2005-01-20
2010-11-23
Nanosolar, Inc.
Optoelectronic architecture having compound conducting substrate
US8541048B1
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2004-09-18
2013-09-24
Nanosolar, Inc.
Formation of photovoltaic absorber layers on foil substrates
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2004-09-18
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Nanosolar, Inc.
Formation of solar cells with conductive barrier layers and foil substrates
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Aeris Capital Sustainable Ip Ltd.
High-throughput assembly of series interconnected solar cells
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三洋電機株式会社
Method for manufacturing photovoltaic device
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Thin-film devices fromed from solid particles
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Solar cell and method for manufacturing the same
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Kyocera Corporation
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JP
JP58075713A
patent/JPS59201471A/en
active
Pending
1983-07-27
IN
IN512/DEL/83A
patent/IN160092B/en
unknown
1984
1984-04-30
AU
AU27511/84A
patent/AU567558B2/en
not_active
Expired
1984-04-30
GB
GB08411036A
patent/GB2143084B/en
not_active
Expired
1984-04-30
US
US06/605,663
patent/US4622432A/en
not_active
Expired – Fee Related
1985
1985-04-11
US
US06/722,006
patent/US4597161A/en
not_active
Expired – Lifetime
Also Published As
Publication number
Publication date
JPS59201471A
(en)
1984-11-15
IN160092B
(en)
1987-06-27
GB2143084A
(en)
1985-01-30
GB8411036D0
(en)
1984-06-06
GB2143084B
(en)
1987-06-17
US4622432A
(en)
1986-11-11
US4597161A
(en)
1986-07-01
AU567558B2
(en)
1987-11-26
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