AU1942383A - Creación de Inventos y Patentes con Inteligencia Artificial

AU1942383A – Method of making yttrium silicon oxynitrides
– Google Patents

AU1942383A – Method of making yttrium silicon oxynitrides
– Google Patents
Method of making yttrium silicon oxynitrides

Info

Publication number
AU1942383A

AU1942383A
AU19423/83A
AU1942383A
AU1942383A
AU 1942383 A
AU1942383 A
AU 1942383A
AU 19423/83 A
AU19423/83 A
AU 19423/83A
AU 1942383 A
AU1942383 A
AU 1942383A
AU 1942383 A
AU1942383 A
AU 1942383A
Authority
AU
Australia
Prior art keywords
mixture
sio
yttrium silicon
silicon oxynitride
heating
Prior art date
1983-07-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
AU19423/83A
Other versions

AU560369B2
(en

Inventor
Howard D. Blair
Andre Ezis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Ford Motor Company of Canada Ltd

Ford Motor Co

Original Assignee
Ford Motor Company of Canada Ltd
Ford Motor Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1983-07-19
Filing date
1983-07-19
Publication date
1985-03-04

1983-07-19
Application filed by Ford Motor Company of Canada Ltd, Ford Motor Co
filed
Critical
Ford Motor Company of Canada Ltd

1985-03-04
Publication of AU1942383A
publication
Critical
patent/AU1942383A/en

1987-04-02
Application granted
granted
Critical

1987-04-02
Publication of AU560369B2
publication
Critical
patent/AU560369B2/en

2003-07-19
Anticipated expiration
legal-status
Critical

Status
Ceased
legal-status
Critical
Current

Links

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Classifications

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/082—Compounds containing nitrogen and non-metals and optionally metals

C01B21/0821—Oxynitrides of metals, boron or silicon

C—CHEMISTRY; METALLURGY

C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES

C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE

C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products

C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics

C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides

C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride

C—CHEMISTRY; METALLURGY

C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES

C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE

C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products

C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2006/00—Physical properties of inorganic compounds

C01P2006/10—Solid density

Description

METHOD OF MAKING YTTRIUM SILICON OXYNITRIDES
TECHNICAL FIELD The invention relates to the art of making silicon oxynitrides and, more particularly, yttrium silicon oxynitrides.
BACKGROUND OF THE INVENTION AND PRIOR ART STATEMENT
Until recently, the prior art had not made yttrium silicon oxynitrides independently so that they could be used as a powder additive for a variety of subsequent chemical processes. Oxynitrides, if formed at all, were formed as a comingled byproduct of heating, such as by hot pressing a ternary system of silicon nitride, and two oxides used as hot pressing aids (see U.S. patents 4,102,698; 4,341,874; and 4,350,771). In each of these patents, a compact of the ternary powder system is sintered to a relatively high density during which secondary phases form, which may include oxynitrides. Of course, the process was not aimed at producing an oxynitride that could be extracted for other uses. The high density of the resulting product made it very difficult to separate out any oxynitrides that had been formed and even more difficult to convert the high density sintered product into a reground powder. But, more importantly, the purity and type of second phases produced as a result of such sintering could not be accurately controlled, and the chemistry constraints imposed by the presence of excess silicon nitride inhibited the formation of desired or selected yttrium silicon oxynitrides. A recent effort (see U.S. patent 4,331,771) has been made to produce bonded silicon oxynitrides for utility as a structural material. In this effort, silicon powder and oxides are reacted in the presence of an

oxygen/nitrogen atmosphere. The method is designed to provide for a strong and dense oxynitride body required by the utilization of the body, which strength can be obtained only by the presence of impure substances in the oxynitride body.
What is needed is a method by which a low density, pure form of the oxynitride can be made economically for other uses with minimal regrinding. There is a need for a method by which stoichiometric amounts of the ingredients needed for a specific oxynitride can be chemically reacted to form the specific compound without byproducts and contaminating chemical reactions.
SUMMARY OF THE INVENTION The invention is a method of making, yttrium silicon oxynitrides of the formula YaSibOcNd, by the steps comprising: (a) mixing together, in intimate reactive contact, stoichiometric amounts of Y2O3, SiO2, and Si3N4 to form a desired yttrium silicon oxynitride where a, b, c, and d represent the required element parts of the compound in equilibrium with the mixture element parts (when necessary, this requires taking into account the amount of Siθ2 that is present as an oxide coating on the Si3N4); (b) heating the mixture in an inert atmosphere to a temperature level and for a time sufficient to convert the stoichiometric amounts of the mixture to the desired yttrium silicon oxynitride; and (c) grinding said heat agglomerated mixture to a powder.
It is preferable to heat the mixture to the temperature range of 1500-1550°C for at least 6 hours to produce low density Y10Si6O24N2 (hereafter Y10 phase), and to heat the mixture to the temperature range of 1600-1650°C for at least 6 hours to produce low density YSiO2N phase (hereafter Y1 phase). The lower temperatures

and longer times of heating result in a low density (preferably no greater than 2.1 gm/cm3) for the heated powder. As heating progresses in the nitrogen atmosphere, reaction gases may form (such as SiO) and form part of the atmosphere. Excess SiO2 may be needed in the initial charge to account for the SiO volatilization.
BEST MODE FOR CARRYING OUT THE INVENTION A preferred method for carrying out the subject invention is as follows. 1. Mixing Stoichiometric Amounts of Ingredients
Yttrium silicon oxynitride, according to the formula YaSibOcNd, is made by mixing together stoichiometric amounts of Y2O3, SiO2, and Si3N4 to form a specific yttrium silicon oxynitride compound. The subscripts a, b, c, and d represent the required element parts of the compound equilibrated with the mixture element parts. A preferred oxynitride, having the formula Y10Si6O24N2, can be prepared by the nominal mixing together of 10 parts of Y2O3, 9 parts SiO2, and 1 part Si3N4, heating the mixture in a nitrogen atmosphere to a temperature level of 1500-1550°C for a period in excess of 6 hours, preferably 7 hours, to a density of about 2 gm/cm3, and then regrinding the heat agglomerated mixture to a powder again. It is desirable that the regrinding be minimal as facilitated by the low density of heated mass and thereby avoid grinding contaminant. The resultant powder is thus useful as a relatively pure chemical additive in the desired crystalline form and phase.
Alternatively, the phase of YSiO2N may be formed by mixing together 2 parts of Y2O3, 1 part SiO2, 1 part Si3N4, and heating the mixture in a nitrogen atmosphere to a temperature level of 1600-1650°C for a period in excess of 6 hours, preferably 8 hours, to a density of approximately 2.0 gm/cm3.

In the above modes, a specific temperature range and stoichiometric amount was required to make the method operate properly. The purity preferred for the yttria powder was 99.99% or greater, for the SiO2 it was 99.5% or greater, and for the Si3N4 it was 99.0% or greater. Each of the ingredients preferably should have a particle size ofs silicon nitride less than 10 microns and an average particle size of 2-3 microns, Y2O3 of 10 microns or less and an average particle size of about 2 microns, and SiO2 of less than 10 microns and an average of about 2-3 microns. Mixing may be carried out in a milling apparatus which provides homogeneity with little change in particle size.
Preferably, the milled mixture is compacted for ease of handling and placement in a furnace and to ensure intimate reactive contact during firing. However, the mixture may also be placed in a furnace dish and heated in the loose aggregate form with some sacrifice in chemical conversion efficiency. 2. Heating
The mixture or compact is heated in an inert atmosphere without mechanical pressure to convert the ingredients to the oxynitride compound. The furnace is preferably evacuated to a pressure of less than 1 micron and heated at a fast rate, i.e., 500°F/hr (278°C/hr) to 1200°F (649ºC) and preferably even faster (such as 1000°C/hr). The furnace is then filled with gaseous nitrogen mixture, the total O2 and H2O content of such gaseous mixture being less than about 4 ppm. The temperature of the furnace is then increased up to the desired target level of, for example, 1500-1550°C for making the Y10 phase, or to the level of 1600-1650°C for making the Y1 phase. Some of the SiO2 may volatilize and form SiO vapor and may have to be accounted for in the initial charge.

3. Grinding
The heat agglomerated mixture is then comminuted to a loose powder form, preferably using a conventional ball milling apparatus. In this apparatus, a batch of the heated agglomerated mixture is broken down by milling media in the form of Si3N4 cylinders (1/2″ diameter by 1/2″ length). The milling may be carried out with a small addition of acetone for 1-6 hours and then heated to remove the acetone. Examples
To form the Y10Si6O24N2 phase, a 100 gram batch or mixture was prepared consisting of 4.773 grams of Si3N4 powder, 76.82 grams of Y2O3 powder, and 18.399 grams amorphous SiO2 (without taking into consideration SiO2 present as an oxide on the Si3N4). The mixture was lightly compacted into a BN container, using about 10 psi.
The container was placed in a furnace evacuated to 1 micron and heated to 1200ºF (649°C) at a fast rate of
500°C/hr or higher. The temperature was held for one hour and then relatively pure N2 gas was added to the furnace.
The container was then heated to 1550°C at a rate of
200-300°C/hr. The container was held at this temperature for six hours. The container, upon cooling, possessed about 100 grams of a Y10Si6O24N2 cake. The cake was then ground to a powder form.
The resulting powder contains at least 99% of the Y10 phase if it is to be useful as a crystalline chemical additive for cutting tool applications. However, for some applications, as low as 75% conversion may be acceptable. Deviation from the heating rate, time of heating, and equilibrium temperature conditions in the furnace will cause less than 100% of Y10 phase to form.
To make a 100 gram batch of essentially single phase YSiO2N, a mixture was prepared consisting of 22.0 grams of Si3N4, 8.7 grams Siθ2 (assumes 2.3% SiO2 on Si3N4

as an oxide layer) and 69.3 grams of Y2O3. The mixture was again hand pressed into a furnace container, heated to 1650°C for 6 hours, and cooled down reasonably fast.
The heating may be carried out according to a typical nitriding cycle, but such cycle is not cost effective because extremely long periods of time are required and the conversion to oxynitrides is not as predictable.

Claims (6)

We claim:

1. A method of making yttrium silicon oxynitrides according to the formula YasibOcNd, by the steps comprising:
(a) mixing together, in intimate reactive contact, stoichiometric amounts of Y2O3, SiO2, and Si3N4 to form a desired yttrium silicon oxynitride where a, b, c, and d represent the required element parts of the compound in equilibrium with the mixture element parts, said SiO2 may be present as an oxide coating on said Si3N4;
(b) heating the mixture in an inert atmosphere to a temperature level and for a time sufficient to convert the stoichiometric amounts of the mixture to the desired yttrium silicon oxynitride; and (c) grinding said heat agglomerated mixture to a powder.

2. The method as in claim 1, in which said atmosphere is comprised of nitrogen.

3. The method as in claim 1, in which said heating is carried out to form a yttrium silicon oxynitride of a density no greater than 2.1 gm/cm3.

4. The method as in claim 1, in which said heating is carried out for a time in excess of six hours.

5. The method as in claim 1, in which the yttrium silicon oxynitride to be formed is Y10S16O24N2, and said mixture is formed by mixing 10 parts of Y2O3, 9 parts of SiO2, and 1 part of Si3N4, said mixture being heated to a temperature level of 1500-1550°C for a period in excess of six hours to a density of about 2.0 gm/cm3.

6. The method as in claim 1, in which the yttrium silicon oxynitride is comprised of YSiO2N, and said mixture is formed by mixing 2 parts of Y2O3, 1 part of SiO2, and 1 part of Si3N4, said mixture being heated to the temperature of 1600-1650°C for a period in excess of six hours in a nitrogen atmosphere.

AU19423/83A
1983-07-19
1983-07-19
Method of making yttrium silicon oxynitrides

Ceased

AU560369B2
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

PCT/US1983/001115

WO1985000583A1
(en)

1983-07-19
1983-07-19
Method of making yttrium silicon oxynitrides

Publications (2)

Publication Number
Publication Date

AU1942383A
true

AU1942383A
(en)

1985-03-04

AU560369B2

AU560369B2
(en)

1987-04-02

Family
ID=22175372
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU19423/83A
Ceased

AU560369B2
(en)

1983-07-19
1983-07-19
Method of making yttrium silicon oxynitrides

Country Status (7)

Country
Link

US
(1)

US4501723A
(en)

EP
(1)

EP0148833B1
(en)

JP
(1)

JPS60501855A
(en)

AU
(1)

AU560369B2
(en)

BR
(1)

BR8307733A
(en)

DE
(1)

DE3376416D1
(en)

WO
(1)

WO1985000583A1
(en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

BR8307733A
(en)

1983-07-19
1985-06-04
Ford Motor Co

PROCESS FOR THE MANUFACTURE OF ITRIO SILICIO OXINITRETES

US4692320A
(en)

1985-12-24
1987-09-08
Ford Motor Company
Method of making oxynitrides

US5128285A
(en)

1988-04-14
1992-07-07
Ngk Spark Plug Co., Ltd.
Silicon oxynitride sintered body

US5188781A
(en)

1988-09-10
1993-02-23
Hoechst Aktiengesellschaft
Silicon nitride ceramic and a process for its preparation

JP5363132B2
(en)

2008-02-13
2013-12-11
日本碍子株式会社

Yttrium oxide material, member for semiconductor manufacturing apparatus, and method for manufacturing yttrium oxide material

EP2575657B1
(en)

2010-06-01
2017-07-26
AFreeze GmbH
Leakage protection system, pressure balancing system, and precipitator with valve function for ablation applications

CN109627014B
(en)

2019-01-14
2021-07-13
中国科学院上海硅酸盐研究所
Si with high strength and high thermal conductivity3N4Ceramic material and preparation method thereof

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Publication number
Priority date
Publication date
Assignee
Title

US3356513A
(en)

1966-12-20
1967-12-05
Norton Co
Production of silicon oxynitride

US3830652A
(en)

1973-06-28
1974-08-20
Us Army
Hot pressed, high strength silicon nitride

US4046580A
(en)

1974-06-28
1977-09-06
Tokyo Shibaura Electric Co., Ltd.
Silicon nitride-based sintered material and method for manufacturing the same

US4102698A
(en)

1976-11-23
1978-07-25
Westinghouse Electric Corp.
Silicon nitride compositions in the Si3 N4 -Y2 O3 -SiO2 system

US4341874A
(en)

1977-01-13
1982-07-27
Tokyo Shibaura Electric Co., Ltd.
Si3 N4 Ceramic powder material and method for manufacturing the same

US4280850A
(en)

1978-06-15
1981-07-28
Gte Laboratories, Incorporated
S13N4 Having high temperature strength and method

US4350771A
(en)

1978-09-20
1982-09-21
Gte Laboratories Incorporated
Oxidation resistant silicon nitride containing rare earth oxide

US4234343A
(en)

1979-01-04
1980-11-18
The United States Of America As Represented By The United States Department Of Energy
Structural silicon nitride materials containing rare earth oxides

US4323325A
(en)

1979-12-20
1982-04-06
Ford Motor Company
ethod of using Si3 N4.Y2 O3.SiO2 ceramic system for machine cast iron

US4331771A
(en)

1980-05-12
1982-05-25
Norton Company
High density silicon oxynitride

JPS5895608A
(en)

1981-11-30
1983-06-07
Toshiba Corp
Production of ceramic powder

US4388414A
(en)

1981-12-21
1983-06-14
Ford Motor Company
Thermally stable silicon nitride material

US4383958A
(en)

1981-12-21
1983-05-17
Gte Laboratories Incorporated
Method of producing dense silicon nitride ceramic articles having controlled surface layer composition

BR8307733A
(en)

1983-07-19
1985-06-04
Ford Motor Co

PROCESS FOR THE MANUFACTURE OF ITRIO SILICIO OXINITRETES

1983

1983-07-19
BR
BR8307733A
patent/BR8307733A/en
unknown

1983-07-19
DE
DE8383902770T
patent/DE3376416D1/en
not_active
Expired

1983-07-19
AU
AU19423/83A
patent/AU560369B2/en
not_active
Ceased

1983-07-19
US
US06/527,643
patent/US4501723A/en
not_active
Expired – Fee Related

1983-07-19
EP
EP83902770A
patent/EP0148833B1/en
not_active
Expired

1983-07-19
JP
JP58502826A
patent/JPS60501855A/en
active
Pending

1983-07-19
WO
PCT/US1983/001115
patent/WO1985000583A1/en
active
IP Right Grant

Also Published As

Publication number
Publication date

DE3376416D1
(en)

1988-06-01

US4501723A
(en)

1985-02-26

WO1985000583A1
(en)

1985-02-14

EP0148833A4
(en)

1986-01-20

EP0148833B1
(en)

1988-04-27

EP0148833A1
(en)

1985-07-24

BR8307733A
(en)

1985-06-04

AU560369B2
(en)

1987-04-02

JPS60501855A
(en)

1985-10-31

Información de contacto