AU4279172A - Creación de Inventos y Patentes con Inteligencia Artificial

AU4279172A – Gate protective device for insulated gate field effect transistors
– Google Patents

AU4279172A – Gate protective device for insulated gate field effect transistors
– Google Patents
Gate protective device for insulated gate field effect transistors

Info

Publication number
AU4279172A

AU4279172A
AU42791/72A
AU4279172A
AU4279172A
AU 4279172 A
AU4279172 A
AU 4279172A
AU 42791/72 A
AU42791/72 A
AU 42791/72A
AU 4279172 A
AU4279172 A
AU 4279172A
AU 4279172 A
AU4279172 A
AU 4279172A
Authority
AU
Australia
Prior art keywords
field effect
protective device
effect transistors
gate
insulated gate
Prior art date
1971-09-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
AU42791/72A
Other versions

AU459838B2
(en

Inventor
Alan Sunshine Richard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-09-03
Filing date
1972-05-26
Publication date
1973-11-29

1972-05-26
Application filed by RCA Corp
filed
Critical
RCA Corp

1973-11-29
Publication of AU4279172A
publication
Critical
patent/AU4279172A/en

1975-04-10
Application granted
granted
Critical

1975-04-10
Publication of AU459838B2
publication
Critical
patent/AU459838B2/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof

H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate

H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H01L27/0203—Particular design considerations for integrated circuits

H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/053—Field effect transistors fets

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/15—Silicon on sapphire SOS

AU42791/72A
1971-09-03
1972-05-26
Gate protective device for insulated gate field effect transistors

Expired

AU459838B2
(en)

Applications Claiming Priority (2)

Application Number
Priority Date
Filing Date
Title

US17779071A

1971-09-03
1971-09-03

USUS177,790

1971-09-03

Publications (2)

Publication Number
Publication Date

AU4279172A
true

AU4279172A
(en)

1973-11-29

AU459838B2

AU459838B2
(en)

1975-04-10

Family
ID=22650002
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU42791/72A
Expired

AU459838B2
(en)

1971-09-03
1972-05-26
Gate protective device for insulated gate field effect transistors

Country Status (11)

Country
Link

US
(1)

US3728591A
(en)

JP
(1)

JPS5138588B2
(en)

AU
(1)

AU459838B2
(en)

BE
(1)

BE788269A
(en)

CA
(1)

CA966935A
(en)

DE
(1)

DE2226613C3
(en)

FR
(1)

FR2150684B1
(en)

GB
(1)

GB1339250A
(en)

IT
(1)

IT955274B
(en)

NL
(1)

NL7207246A
(en)

SE
(1)

SE376116B
(en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

CA941515A
(en)

1971-07-12
1974-02-05
Rca Corporation
Gate protective device for insulated gate field-effect transistors

US3865653A
(en)

1971-10-12
1975-02-11
Karl Goser
Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element

DE2335333B1
(en)

1973-07-11
1975-01-16
Siemens Ag

Process for the production of an arrangement with field effect transistors in complementary MOS technology

US3922703A
(en)

1974-04-03
1975-11-25
Rca Corp
Electroluminescent semiconductor device

JPS5623709Y2
(en)

1975-05-16
1981-06-03

JPS5299786A
(en)

1976-02-18
1977-08-22
Agency Of Ind Science & Technol
Mos integrated circuit

US4312114A
(en)

1977-02-24
1982-01-26
The United States Of America As Represented By The Secretary Of The Navy
Method of preparing a thin-film, single-crystal photovoltaic detector

JPS5763854A
(en)

1980-10-07
1982-04-17
Toshiba Corp
Semiconductor device

JPS57130476A
(en)

1981-02-05
1982-08-12
Sony Corp
Semiconductor device

JPS57141962A
(en)

1981-02-27
1982-09-02
Hitachi Ltd
Semiconductor integrated circuit device

JPS5825264A
(en)

1981-08-07
1983-02-15
Hitachi Ltd
Insulated gate type semiconductor device and manufacture thereof

US4543597A
(en)

1982-06-30
1985-09-24
Tokyo Shibaura Denki Kabushiki Kaisha
Dynamic semiconductor memory and manufacturing method thereof

KR890004495B1
(en)

1984-11-29
1989-11-06
가부시끼가이샤 도오시바
Semiconductor device

DE3855533T2
(en)

1987-12-28
1997-01-23
Fuji Electric Co Ltd

Insulated gate semiconductor device

JPH0473970A
(en)

1990-07-16
1992-03-09
Fuji Electric Co Ltd
Mos semiconductor device

JP3001173U
(en)

1994-02-18
1994-08-23
有限会社野々川商事

Hair dyeing brush

JP2768265B2
(en)

1994-04-15
1998-06-25
株式会社デンソー

Semiconductor device

JP2803565B2
(en)

1994-04-15
1998-09-24
株式会社デンソー

Method for manufacturing semiconductor device

US6146913A
(en)

1998-08-31
2000-11-14
Lucent Technologies Inc.
Method for making enhanced performance field effect devices

FR2789226B1
(en)

1999-01-29
2002-06-14
Commissariat Energie Atomique

ELECTROSTATIC DISCHARGE PROTECTION DEVICE FOR MICROELECTRONIC COMPONENTS ON SOI-TYPE SUBSTRATE

JP2002208702A
(en)

2001-01-10
2002-07-26
Mitsubishi Electric Corp
Power semiconductor device

DE102006023429B4
(en)

2006-05-18
2011-03-10
Infineon Technologies Ag

ESD protection element for use in an electrical circuit

DE102014105790B4
(en)

2014-04-24
2019-08-29
Infineon Technologies Dresden Gmbh

Semiconductor device with electrostatic discharge protection structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3469155A
(en)

1966-09-23
1969-09-23
Westinghouse Electric Corp
Punch-through means integrated with mos type devices for protection against insulation layer breakdown

US3470390A
(en)

1968-02-02
1969-09-30
Westinghouse Electric Corp
Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

US3567508A
(en)

1968-10-31
1971-03-02
Gen Electric
Low temperature-high vacuum contact formation process

US3636418A
(en)

1969-08-06
1972-01-18
Rca Corp
Epitaxial semiconductor device having adherent bonding pads

1971

1971-09-03
US
US00177790A
patent/US3728591A/en
not_active
Expired – Lifetime

1972

1972-05-01
CA
CA141,016A
patent/CA966935A/en
not_active
Expired

1972-05-06
IT
IT24028/72A
patent/IT955274B/en
active

1972-05-25
GB
GB2469772A
patent/GB1339250A/en
not_active
Expired

1972-05-26
AU
AU42791/72A
patent/AU459838B2/en
not_active
Expired

1972-05-29
NL
NL7207246A
patent/NL7207246A/xx
unknown

1972-05-31
DE
DE2226613A
patent/DE2226613C3/en
not_active
Expired

1972-06-01
SE
SE7207184A
patent/SE376116B/xx
unknown

1972-06-01
FR
FR7219732A
patent/FR2150684B1/fr
not_active
Expired

1972-06-02
JP
JP47055556A
patent/JPS5138588B2/ja
not_active
Expired

1972-08-31
BE
BE788269A
patent/BE788269A/en
unknown

Also Published As

Publication number
Publication date

DE2226613A1
(en)

1973-03-15

IT955274B
(en)

1973-09-29

JPS4837084A
(en)

1973-05-31

JPS5138588B2
(en)

1976-10-22

DE2226613B2
(en)

1977-12-22

FR2150684A1
(en)

1973-04-13

BE788269A
(en)

1972-12-18

AU459838B2
(en)

1975-04-10

FR2150684B1
(en)

1977-07-22

GB1339250A
(en)

1973-11-28

DE2226613C3
(en)

1978-08-24

US3728591A
(en)

1973-04-17

CA966935A
(en)

1975-04-29

SE376116B
(en)

1975-05-05

NL7207246A
(en)

1973-03-06

Información de contacto