AU466830B2 – Charge coupled devices with continuous resistor electrode
– Google Patents
AU466830B2 – Charge coupled devices with continuous resistor electrode
– Google Patents
Charge coupled devices with continuous resistor electrode
Info
Publication number
AU466830B2
AU466830B2
AU40185/72A
AU4018572A
AU466830B2
AU 466830 B2
AU466830 B2
AU 466830B2
AU 40185/72 A
AU40185/72 A
AU 40185/72A
AU 4018572 A
AU4018572 A
AU 4018572A
AU 466830 B2
AU466830 B2
AU 466830B2
Authority
AU
Australia
Prior art keywords
charge coupled
coupled devices
resistor electrode
continuous resistor
continuous
Prior art date
1971-04-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU40185/72A
Other versions
AU4018572A
(en
Inventor
KIM and EDWARD HUNTER SNOW CHOONG-HI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-04-21
Filing date
1972-03-20
Publication date
1973-09-27
1972-03-20
Application filed by Fairchild Camera and Instrument Corp
filed
Critical
Fairchild Camera and Instrument Corp
1973-09-27
Application granted
granted
Critical
1973-09-27
Publication of AU4018572A
publication
Critical
patent/AU4018572A/en
1973-09-27
Publication of AU466830B2
publication
Critical
patent/AU466830B2/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L27/144—Devices controlled by radiation
H01L27/146—Imager structures
H01L27/148—Charge coupled imagers
H01L27/14806—Structural or functional details thereof
H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/762—Charge transfer devices
H01L29/765—Charge-coupled devices
H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
H01L29/76866—Surface Channel CCD
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
AU40185/72A
1971-04-21
1972-03-20
Charge coupled devices with continuous resistor electrode
Expired
AU466830B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US13608771A
1971-04-21
1971-04-21
USUS136087
1971-04-21
Publications (2)
Publication Number
Publication Date
AU4018572A
AU4018572A
(en)
1973-09-27
AU466830B2
true
AU466830B2
(en)
1973-09-27
Family
ID=22471226
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU40185/72A
Expired
AU466830B2
(en)
1971-04-21
1972-03-20
Charge coupled devices with continuous resistor electrode
Country Status (9)
Country
Link
US
(1)
US3728590A
(en)
JP
(1)
JPS5653369U
(en)
AU
(1)
AU466830B2
(en)
CA
(1)
CA948330A
(en)
DE
(1)
DE2210165A1
(en)
FR
(1)
FR2133893B1
(en)
GB
(1)
GB1316229A
(en)
IT
(1)
IT948967B
(en)
NL
(1)
NL7200401A
(en)
Families Citing this family (21)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4157563A
(en)
*
1971-07-02
1979-06-05
U.S. Philips Corporation
Semiconductor device
US3946418A
(en)
*
1972-11-01
1976-03-23
General Electric Company
Resistive gate field effect transistor
DE2254754C3
(en)
*
1972-11-09
1980-11-20
Deutsche Itt Industries Gmbh, 7800 Freiburg
Integrated IG-FET bucket chain circuit
US3896474A
(en)
*
1973-09-10
1975-07-22
Fairchild Camera Instr Co
Charge coupled area imaging device with column anti-blooming control
US3896485A
(en)
*
1973-12-03
1975-07-22
Fairchild Camera Instr Co
Charge-coupled device with overflow protection
JPS51118969A
(en)
*
1975-04-11
1976-10-19
Fujitsu Ltd
Manufacturing method of semiconductor memory
US3943545A
(en)
*
1975-05-22
1976-03-09
Fairchild Camera And Instrument Corporation
Low interelectrode leakage structure for charge-coupled devices
DE2532789A1
(en)
*
1975-07-22
1977-02-10
Siemens Ag
CHARGE-COUPLED SEMI-CONDUCTOR ARRANGEMENT
US4156247A
(en)
*
1976-12-15
1979-05-22
Electron Memories & Magnetic Corporation
Two-phase continuous poly silicon gate CCD
US4189826A
(en)
*
1977-03-07
1980-02-26
Eastman Kodak Company
Silicon charge-handling device employing SiC electrodes
US4319261A
(en)
*
1980-05-08
1982-03-09
Westinghouse Electric Corp.
Self-aligned, field aiding double polysilicon CCD electrode structure
JPS5737870A
(en)
*
1980-08-20
1982-03-02
Toshiba Corp
Semiconductor device
NL8203870A
(en)
*
1982-10-06
1984-05-01
Philips Nv
SEMICONDUCTOR DEVICE.
US4675714A
(en)
*
1983-02-15
1987-06-23
Rockwell International Corporation
Gapless gate charge coupled device
US4580156A
(en)
*
1983-12-30
1986-04-01
At&T Bell Laboratories
Structured resistive field shields for low-leakage high voltage devices
DE68923301D1
(en)
*
1988-02-17
1995-08-10
Fujitsu Ltd
Semiconductor device with a thin insulating layer.
US5214304A
(en)
*
1988-02-17
1993-05-25
Fujitsu Limited
Semiconductor device
US4951106A
(en)
*
1988-03-24
1990-08-21
Tektronix, Inc.
Detector device for measuring the intensity of electromagnetic radiation
US5393971A
(en)
*
1993-06-14
1995-02-28
Ball Corporation
Radiation detector and charge transport device for use in signal processing systems having a stepped potential gradient means
US5793070A
(en)
*
1996-04-24
1998-08-11
Massachusetts Institute Of Technology
Reduction of trapping effects in charge transfer devices
US7217601B1
(en)
2002-10-23
2007-05-15
Massachusetts Institute Of Technology
High-yield single-level gate charge-coupled device design and fabrication
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR1535286A
(en)
*
1966-09-26
1968-08-02
Gen Micro Electronics
Field effect metal oxide semiconductor transistor and method of manufacturing same
US3473032A
(en)
*
1968-02-08
1969-10-14
Inventors & Investors Inc
Photoelectric surface induced p-n junction device
US3611070A
(en)
*
1970-06-15
1971-10-05
Gen Electric
Voltage-variable capacitor with controllably extendible pn junction region
CH561459A5
(en)
*
1973-03-07
1975-04-30
Siemens Ag
1971
1971-04-21
US
US00136087A
patent/US3728590A/en
not_active
Expired – Lifetime
1971-11-25
CA
CA128,591A
patent/CA948330A/en
not_active
Expired
1971-12-22
GB
GB5972971A
patent/GB1316229A/en
not_active
Expired
1972
1972-01-11
NL
NL7200401A
patent/NL7200401A/xx
unknown
1972-01-31
IT
IT67272/72A
patent/IT948967B/en
active
1972-03-03
DE
DE19722210165
patent/DE2210165A1/en
active
Pending
1972-03-20
AU
AU40185/72A
patent/AU466830B2/en
not_active
Expired
1972-04-19
FR
FR7213782A
patent/FR2133893B1/fr
not_active
Expired
1980
1980-08-13
JP
JP1980113861U
patent/JPS5653369U/ja
active
Pending
Also Published As
Publication number
Publication date
AU4018572A
(en)
1973-09-27
NL7200401A
(en)
1972-10-24
CA948330A
(en)
1974-05-28
DE2210165A1
(en)
1972-10-26
IT948967B
(en)
1973-06-11
JPS5653369U
(en)
1981-05-11
US3728590A
(en)
1973-04-17
FR2133893A1
(en)
1972-12-01
FR2133893B1
(en)
1977-08-19
GB1316229A
(en)
1973-05-09
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None