AU562641B2 – Electronic matrix array
– Google Patents
AU562641B2 – Electronic matrix array
– Google Patents
Electronic matrix array
Info
Publication number
AU562641B2
AU562641B2
AU22406/83A
AU2240683A
AU562641B2
AU 562641 B2
AU562641 B2
AU 562641B2
AU 22406/83 A
AU22406/83 A
AU 22406/83A
AU 2240683 A
AU2240683 A
AU 2240683A
AU 562641 B2
AU562641 B2
AU 562641B2
Authority
AU
Australia
Prior art keywords
address lines
cross
lines
angle
spaced apart
Prior art date
1983-01-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU22406/83A
Other versions
AU2240683A
(en
Inventor
Robert Royce Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1983-01-18
Filing date
1983-12-14
Publication date
1987-06-18
Family has litigation
First worldwide family litigation filed
litigation
Critical
https://patents.darts-ip.com/?family=23822628&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU562641(B2)
«Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
1983-12-14
Application filed by Energy Conversion Devices Inc
filed
Critical
Energy Conversion Devices Inc
1984-07-19
Publication of AU2240683A
publication
Critical
patent/AU2240683A/en
1987-06-18
Application granted
granted
Critical
1987-06-18
Publication of AU562641B2
publication
Critical
patent/AU562641B2/en
2003-12-14
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/20—Multistable switching devices, e.g. memristors
H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/801—Constructional details of multistable switching devices
H10N70/821—Device geometry
H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/801—Constructional details of multistable switching devices
H10N70/881—Switching materials
H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
An electronic matrix array (30) and method for making same includes a plurality of first (32) and second (34) spaced apart address lines which cross each other at an angle and are spaced to form a plurality of crossover points therebetween. Diode means (36) between each of the crossover points establish selectable current paths through respective pairs of the first (32) and second (34) address lines. Each diode means (36) includes a body (40) of semiconductor material preferably comprised of amorphous silicon alloys and having a p-i-n- or n-i-p configuration and has an effective current conduction cross-sectional area formed by the overlapping juxtaposed common surface area of the address lines (32, 34). A method of making the array includes the steps of forming a continuous diode structure over a conductive substrate, forming a plurality of first and second spaced apart conductive address lines on opposite sides of the continuous diode structure, the second lines being formed by removing portions of said substrate which cross at an angle from said first address lines.
AU22406/83A
1983-01-18
1983-12-14
Electronic matrix array
Ceased
AU562641B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US45891983A
1983-01-18
1983-01-18
US458919
1983-01-18
Publications (2)
Publication Number
Publication Date
AU2240683A
AU2240683A
(en)
1984-07-19
AU562641B2
true
AU562641B2
(en)
1987-06-18
Family
ID=23822628
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU22406/83A
Ceased
AU562641B2
(en)
1983-01-18
1983-12-14
Electronic matrix array
Country Status (13)
Country
Link
EP
(1)
EP0117045B1
(en)
JP
(2)
JPS59136967A
(en)
KR
(1)
KR900002912B1
(en)
AT
(1)
ATE70664T1
(en)
AU
(1)
AU562641B2
(en)
BR
(1)
BR8400202A
(en)
CA
(1)
CA1208780A
(en)
DE
(1)
DE3485348D1
(en)
IE
(1)
IE58671B1
(en)
IL
(1)
IL70715A0
(en)
IN
(3)
IN162262B
(en)
MX
(1)
MX159577A
(en)
ZA
(2)
ZA8416B
(en)
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Title
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1983-01-18
1987-07-07
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Electronic matrix arrays and method for making the same
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Progammable integrated crosspoint switch
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Image optical memory device, optical recording method and optical memory manufacturing method
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1988-07-13
1988-08-17
Raychem Ltd
Electrical device
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1990-11-30
1991-01-16
Philips Electronic Associated
Addressable matrix device
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1992-06-23
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Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
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1992-06-23
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Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
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A stack/trench diode for use with a multi-state material in a non-volatile memory cell
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Method and apparatus for forming an integrated circuit electrode having a reduced contact area
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Method for fabricating an array of ultra-small pores for chalcogenide memory cells
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1995-06-07
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Chalcogenide memory cell with a plurality of chalcogenide electrodes
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Memory array having a multi-state element and method for forming such array or cells thereof
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Polysilicon pillar diode for use in a non-volatile memory cell
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Method for optimal crystallization to obtain high electrical performance from chalcogenides
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Conductors in semiconductor devices
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Method of forming a polysilicon diode and devices incorporating such diode
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1996-07-22
1998-08-04
Micron Technology, Inc.
Method of making chalogenide memory device
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1996-07-22
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Micron Technology, Inc.
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
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1996-07-22
1999-11-16
Micron Technology, Inc.
Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US6337266B1
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1996-07-22
2002-01-08
Micron Technology, Inc.
Small electrode for chalcogenide memories
US5998244A
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1996-08-22
1999-12-07
Micron Technology, Inc.
Memory cell incorporating a chalcogenide element and method of making same
US5812441A
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1996-10-21
1998-09-22
Micron Technology, Inc.
MOS diode for use in a non-volatile memory cell
US6015977A
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*
1997-01-28
2000-01-18
Micron Technology, Inc.
Integrated circuit memory cell having a small active area and method of forming same
US5952671A
(en)
1997-05-09
1999-09-14
Micron Technology, Inc.
Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A
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1997-06-16
2000-07-11
Micron Technology, Inc.
Memory cell having a reduced active area and a memory array incorporating the same
US6031287A
(en)
*
1997-06-18
2000-02-29
Micron Technology, Inc.
Contact structure and memory element incorporating the same
US6563156B2
(en)
2001-03-15
2003-05-13
Micron Technology, Inc.
Memory elements and methods for making same
US6440837B1
(en)
2000-07-14
2002-08-27
Micron Technology, Inc.
Method of forming a contact structure in a semiconductor device
US7768812B2
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2008-01-15
2010-08-03
Micron Technology, Inc.
Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
US8154005B2
(en)
2008-06-13
2012-04-10
Sandisk 3D Llc
Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
US9343665B2
(en)
2008-07-02
2016-05-17
Micron Technology, Inc.
Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
US8105867B2
(en)
2008-11-18
2012-01-31
Sandisk 3D Llc
Self-aligned three-dimensional non-volatile memory fabrication
US8120068B2
(en)
2008-12-24
2012-02-21
Sandisk 3D Llc
Three-dimensional memory structures having shared pillar memory cells
US8270199B2
(en)
2009-04-03
2012-09-18
Sandisk 3D Llc
Cross point non-volatile memory cell
US8289763B2
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2010-06-07
2012-10-16
Micron Technology, Inc.
Memory arrays
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2010-10-21
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Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
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Title
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(en)
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1958-11-21
1961-08-01
Shockley William
Method of making a semiconductive switching array
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1968-11-04
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Energy Conversion Devices Inc
Film deposited circuits and devices therefor
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Method and apparatus for storing and retrieving information
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1982-01-06
1983-07-14
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Semicondutor device
1983
1983-12-14
AU
AU22406/83A
patent/AU562641B2/en
not_active
Ceased
1983-12-15
CA
CA000443457A
patent/CA1208780A/en
not_active
Expired
1984
1984-01-03
IN
IN03/CAL/84A
patent/IN162262B/en
unknown
1984-01-03
ZA
ZA8416A
patent/ZA8416B/en
unknown
1984-01-06
ZA
ZA84123A
patent/ZA84123B/en
unknown
1984-01-13
DE
DE8484300212T
patent/DE3485348D1/en
not_active
Expired – Lifetime
1984-01-13
AT
AT84300212T
patent/ATE70664T1/en
not_active
IP Right Cessation
1984-01-13
EP
EP84300212A
patent/EP0117045B1/en
not_active
Expired – Lifetime
1984-01-17
JP
JP59006238A
patent/JPS59136967A/en
active
Pending
1984-01-17
JP
JP59006237A
patent/JPS59136966A/en
active
Pending
1984-01-18
KR
KR1019840000202A
patent/KR900002912B1/en
not_active
IP Right Cessation
1984-01-18
MX
MX200077A
patent/MX159577A/en
unknown
1984-01-18
BR
BR8400202A
patent/BR8400202A/en
unknown
1984-01-18
IE
IE10484A
patent/IE58671B1/en
not_active
IP Right Cessation
1984-01-18
IL
IL70715A
patent/IL70715A0/en
unknown
1987
1987-02-27
IN
IN154/CAL/87A
patent/IN162750B/en
unknown
1987-02-27
IN
IN153/CAL/87A
patent/IN163310B/en
unknown
Also Published As
Publication number
Publication date
IE840104L
(en)
1984-07-18
JPS59136967A
(en)
1984-08-06
EP0117045B1
(en)
1991-12-18
CA1208780A
(en)
1986-07-29
IE58671B1
(en)
1993-11-03
EP0117045A3
(en)
1986-12-30
MX159577A
(en)
1989-07-06
BR8400202A
(en)
1984-08-21
AU2240683A
(en)
1984-07-19
ATE70664T1
(en)
1992-01-15
IN162750B
(en)
1988-07-09
KR840007484A
(en)
1984-12-07
IN162262B
(en)
1988-04-23
ZA8416B
(en)
1985-01-30
KR900002912B1
(en)
1990-05-03
EP0117045A2
(en)
1984-08-29
IL70715A0
(en)
1984-04-30
JPS59136966A
(en)
1984-08-06
IN163310B
(en)
1988-09-03
ZA84123B
(en)
1984-09-26
DE3485348D1
(en)
1992-01-30
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