AU6111686A – Sintered silicon carbide ceramic body of high electrical resistivity
– Google Patents
AU6111686A – Sintered silicon carbide ceramic body of high electrical resistivity
– Google Patents
Sintered silicon carbide ceramic body of high electrical resistivity
Info
Publication number
AU6111686A
AU6111686A
AU61116/86A
AU6111686A
AU6111686A
AU 6111686 A
AU6111686 A
AU 6111686A
AU 61116/86 A
AU61116/86 A
AU 61116/86A
AU 6111686 A
AU6111686 A
AU 6111686A
AU 6111686 A
AU6111686 A
AU 6111686A
Authority
AU
Australia
Prior art keywords
silicon carbide
electrical resistivity
sup
high electrical
sintered silicon
Prior art date
1985-10-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU61116/86A
Other versions
AU575011B2
(en
Inventor
Wolfgang Dietrich Georg Boecker
Laurence Niles Hailey
Carl Hewes Mcmurtry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kennecott Corp
Original Assignee
Kennecott Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1985-10-17
Filing date
1986-08-13
Publication date
1987-04-30
1986-08-13
Application filed by Kennecott Corp
filed
Critical
Kennecott Corp
1987-04-30
Publication of AU6111686A
publication
Critical
patent/AU6111686A/en
1988-07-14
Application granted
granted
Critical
1988-07-14
Publication of AU575011B2
publication
Critical
patent/AU575011B2/en
2006-08-13
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/12—Mountings, e.g. non-detachable insulating substrates
H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L23/15—Ceramic or glass substrates
C—CHEMISTRY; METALLURGY
C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Sintered silicon carbide body having a D.C. electrical resistivity of at least 108 Ohm cm at 25°C, a density of at least 2.95 g/cm3 is formed upon sintering in a nitrogenous atmosphere at a temperature of about 2250°C or greater, a shaped body composed essentially of carbon or carbon source material in amount sufficient to provide up to 2.5 percent uncombined carbon; from about 0.4 to about 2.0 percent boron carbide; up to 25 percent of temporary binder and a balance of silicon carbide which is predominately alpha-phase. The shaped body additionally include other sintering aids such as Bn or A1 without destruction of desired high electrical resistivity.
AU61116/86A
1985-10-17
1986-08-13
Sintered silicon carbide ceramic body of high electrical resistivity
Ceased
AU575011B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US789066
1985-10-17
US06/789,066
US4701427A
(en)
1985-10-17
1985-10-17
Sintered silicon carbide ceramic body of high electrical resistivity
Publications (2)
Publication Number
Publication Date
AU6111686A
true
AU6111686A
(en)
1987-04-30
AU575011B2
AU575011B2
(en)
1988-07-14
Family
ID=25146491
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU61116/86A
Ceased
AU575011B2
(en)
1985-10-17
1986-08-13
Sintered silicon carbide ceramic body of high electrical resistivity
Country Status (8)
Country
Link
US
(1)
US4701427A
(en)
EP
(1)
EP0219933B1
(en)
KR
(1)
KR940001657B1
(en)
AT
(1)
ATE85966T1
(en)
AU
(1)
AU575011B2
(en)
BR
(1)
BR8604726A
(en)
CA
(1)
CA1267915A
(en)
DE
(1)
DE3687817T2
(en)
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Priority date
Publication date
Assignee
Title
SE450857B
(en)
*
1985-02-21
1987-08-03
Asea Ab
PROCEDURE FOR BUILDING OF LIGHT REAR SUCTIONS OR DRAWERS
US4701427A
(en)
*
1985-10-17
1987-10-20
Stemcor Corporation
Sintered silicon carbide ceramic body of high electrical resistivity
JPH01242465A
(en)
*
1988-03-23
1989-09-27
Showa Denko Kk
Production of silicon carbide sintered body and sliding member thereof
DE3834325A1
(en)
*
1988-10-08
1990-04-12
Bayer Ag
SIC POWDER, METHOD FOR THE PRODUCTION AND THE USE THEREOF AND THE CORRESPONDING SIC SINTER BODY
US4962069A
(en)
*
1988-11-07
1990-10-09
Dow Corning Corporation
Highly densified bodies from preceramic polysilazanes filled with silicon carbide powders
GB8918319D0
(en)
*
1989-08-10
1989-09-20
British Petroleum Co Plc
Improved sintering process and novel ceramic material
US5250244A
(en)
*
1989-09-26
1993-10-05
Ngk Spark Plug Company, Ltd.
Method of producing sintered ceramic body
US5408574A
(en)
*
1989-12-01
1995-04-18
Philip Morris Incorporated
Flat ceramic heater having discrete heating zones
DK170189B1
(en)
*
1990-05-30
1995-06-06
Yakov Safir
Process for the manufacture of semiconductor components, as well as solar cells made therefrom
US5468936A
(en)
*
1993-03-23
1995-11-21
Philip Morris Incorporated
Heater having a multiple-layer ceramic substrate and method of fabrication
US5322824A
(en)
*
1993-05-27
1994-06-21
Chia Kai Y
Electrically conductive high strength dense ceramic
JP4080030B2
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*
1996-06-14
2008-04-23
住友電気工業株式会社
Semiconductor substrate material, semiconductor substrate, semiconductor device, and manufacturing method thereof
US6464843B1
(en)
1998-03-31
2002-10-15
Lam Research Corporation
Contamination controlling method and apparatus for a plasma processing chamber
JP4610039B2
(en)
2000-03-31
2011-01-12
ラム リサーチ コーポレーション
Plasma processing equipment
JP3607939B2
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2000-06-16
2005-01-05
独立行政法人産業技術総合研究所
Reaction synthesis of silicon carbide-boron nitride composites
JP2002047066A
(en)
*
2000-08-02
2002-02-12
Tokai Carbon Co Ltd
FORMED SiC AND ITS MANUFACTURING METHOD
DE10045339A1
(en)
*
2000-09-14
2002-04-04
Wacker Chemie Gmbh
Molded body made of sintered silicon carbide coated with graphite
KR100498441B1
(en)
2001-04-17
2005-07-01
삼성전자주식회사
Mask for modifing optical proximity effect and method of manufacturing thereof
US6616890B2
(en)
2001-06-15
2003-09-09
Harvest Precision Components, Inc.
Fabrication of an electrically conductive silicon carbide article
US6887421B2
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*
2002-01-14
2005-05-03
Redunndant Materials, Inc.
Method for making a silicon carbide resistor with silicon/silicon carbide contacts by induction heating
JP3764157B2
(en)
*
2003-10-10
2006-04-05
東洋炭素株式会社
High-purity carbon-based material and ceramic film-coated high-purity carbon-based material
KR100911641B1
(en)
*
2005-03-30
2009-08-12
이비덴 가부시키가이샤
Silicon carbide containing particle, process for production of silicon carbide sintered material, silicon carbide sintered material and filter
US7838976B2
(en)
*
2006-07-28
2010-11-23
Semiconductor Energy Laboratory Co., Ltd.
Semiconductor device having a semiconductor chip enclosed by a body structure and a base
US7727919B2
(en)
*
2007-10-29
2010-06-01
Saint-Gobain Ceramics & Plastics, Inc.
High resistivity silicon carbide
US7989380B2
(en)
*
2008-11-26
2011-08-02
Ceradyne, Inc.
High resistivity SiC material with B, N and O as the only additions
KR101155586B1
(en)
*
2009-01-23
2012-06-19
프리시젼다이아몬드 주식회사
Diamond tool and method of producing the same
JP2013500226A
(en)
*
2009-07-24
2013-01-07
サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド
High toughness ceramic composite material
WO2011084252A2
(en)
*
2009-12-21
2011-07-14
Saint-Gobain Ceramics & Plastics, Inc.
Electrostatic dissipative articles and method of making
DE102012012227A1
(en)
2011-06-30
2013-01-03
FCT Hartbearbeitungs GmbH
Producing silicon carbide based ceramic sintered body that is useful e.g. for fabricating semiconductors, comprises sintering powder body in inert gas atmosphere, and performing gas pressure sintering in nitrogen-containing atmosphere
NO335994B1
(en)
2011-10-13
2015-04-13
Saint Gobain Ceramic Mat As
Process for producing grains useful for the preparation of a silicon carbide-based sintered product, composite grains prepared by the process, and use of the grains.
JP7263537B2
(en)
*
2019-10-31
2023-04-24
京セラ株式会社
Wiring substrates, electronic devices and electronic modules
CN116023145A
(en)
*
2022-12-29
2023-04-28
湖南福德电气有限公司
Preparation method of silicon carbide series piezoresistor
CN116623297B
(en)
*
2023-07-25
2023-10-27
北京青禾晶元半导体科技有限责任公司
Silicon carbide composite substrate and preparation method and application thereof
Family Cites Families (14)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4004934A
(en)
*
1973-10-24
1977-01-25
General Electric Company
Sintered dense silicon carbide
US4312954A
(en)
*
1975-06-05
1982-01-26
Kennecott Corporation
Sintered silicon carbide ceramic body
US4135938A
(en)
*
1977-03-31
1979-01-23
The Carborundum Company
High density thermal shock resistant sintered silicon carbide
US4144207A
(en)
*
1977-12-27
1979-03-13
The Carborundum Company
Composition and process for injection molding ceramic materials
DE2809278A1
(en)
*
1978-03-03
1979-09-06
Kempten Elektroschmelz Gmbh
DENSE POLYCRYSTALLINE MOLDED BODY MADE OF ALPHA-SILICON CARBIDE AND THE PROCESS FOR THEIR PRODUCTION THROUGH PRESSURE-FREE SINTERING
DE3064598D1
(en)
*
1979-11-05
1983-09-22
Hitachi Ltd
Electrically insulating substrate and a method of making such a substrate
JPS57180005A
(en)
*
1981-04-30
1982-11-05
Hitachi Ltd
Silicon carbide electric insulator with low dielectric constant
JPS5899172A
(en)
*
1981-12-07
1983-06-13
株式会社日立製作所
Electric insulating silicon carbide sintered body
EP0143122A3
(en)
*
1983-08-26
1987-02-04
Shin-Etsu Chemical Co., Ltd.
An ultrafine powder of silcon carbide, a method for the preparation thereof and a sintered body therefrom
JPS60131863A
(en)
*
1983-12-20
1985-07-13
信越化学工業株式会社
Electrical insulating silicon carbide sintered body
JPS60151276A
(en)
*
1984-01-18
1985-08-09
信越化学工業株式会社
Manufacture of silicon carbide sintered body
JPS60176913A
(en)
*
1984-02-20
1985-09-11
Shin Etsu Chem Co Ltd
Insulating silicon carbide powder and its production
US4701427A
(en)
*
1985-10-17
1987-10-20
Stemcor Corporation
Sintered silicon carbide ceramic body of high electrical resistivity
US5769184A
(en)
*
1996-09-27
1998-06-23
Brooks Automation, Inc.
Coaxial drive elevator
1985
1985-10-17
US
US06/789,066
patent/US4701427A/en
not_active
Expired – Fee Related
1986
1986-07-31
AT
AT86305906T
patent/ATE85966T1/en
not_active
IP Right Cessation
1986-07-31
EP
EP86305906A
patent/EP0219933B1/en
not_active
Expired – Lifetime
1986-07-31
DE
DE8686305906T
patent/DE3687817T2/en
not_active
Expired – Fee Related
1986-08-13
AU
AU61116/86A
patent/AU575011B2/en
not_active
Ceased
1986-09-15
CA
CA000518216A
patent/CA1267915A/en
not_active
Expired – Fee Related
1986-09-30
BR
BR8604726A
patent/BR8604726A/en
unknown
1986-10-17
KR
KR1019860008730A
patent/KR940001657B1/en
not_active
IP Right Cessation
Also Published As
Publication number
Publication date
DE3687817T2
(en)
1993-06-17
DE3687817D1
(en)
1993-04-01
EP0219933B1
(en)
1993-02-24
BR8604726A
(en)
1987-06-23
CA1267915A
(en)
1990-04-17
EP0219933A2
(en)
1987-04-29
KR940001657B1
(en)
1994-02-28
US4701427A
(en)
1987-10-20
ATE85966T1
(en)
1993-03-15
KR870003953A
(en)
1987-05-06
AU575011B2
(en)
1988-07-14
EP0219933A3
(en)
1988-11-17
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Legal Events
Date
Code
Title
Description
2002-03-14
MK14
Patent ceased section 143(a) (annual fees not paid) or expired
