AU2549384A – Multi-layered amorphous semiconductor material
– Google Patents
AU2549384A – Multi-layered amorphous semiconductor material
– Google Patents
Multi-layered amorphous semiconductor material
Info
Publication number
AU2549384A
AU2549384A
AU25493/84A
AU2549384A
AU2549384A
AU 2549384 A
AU2549384 A
AU 2549384A
AU 25493/84 A
AU25493/84 A
AU 25493/84A
AU 2549384 A
AU2549384 A
AU 2549384A
AU 2549384 A
AU2549384 A
AU 2549384A
Authority
AU
Australia
Prior art keywords
semiconductor material
amorphous semiconductor
layered amorphous
layered
semiconductor
Prior art date
1983-03-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU25493/84A
Inventor
Benjamin Abeles
John Thomas Tiedje
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1983-03-11
Filing date
1984-03-09
Publication date
1984-09-13
1984-03-09
Application filed by Exxon Research and Engineering Co
filed
Critical
Exxon Research and Engineering Co
1984-09-13
Publication of AU2549384A
publication
Critical
patent/AU2549384A/en
Status
Abandoned
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
B—PERFORMING OPERATIONS; TRANSPORTING
B82—NANOTECHNOLOGY
B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L29/151—Compositional structures
H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
H01L29/154—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation comprising at least one long range structurally disordered material, e.g. one-dimensional vertical amorphous superlattices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
H01L29/1604—Amorphous materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
H01L29/263—Amorphous materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L31/035236—Superlattices; Multiple quantum well structures
H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
AU25493/84A
1983-03-11
1984-03-09
Multi-layered amorphous semiconductor material
Abandoned
AU2549384A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US47444283A
1983-03-11
1983-03-11
US474442
1983-03-11
Publications (1)
Publication Number
Publication Date
AU2549384A
true
AU2549384A
(en)
1984-09-13
Family
ID=23883553
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU25493/84A
Abandoned
AU2549384A
(en)
1983-03-11
1984-03-09
Multi-layered amorphous semiconductor material
Country Status (4)
Country
Link
EP
(1)
EP0122047B1
(en)
JP
(1)
JPS6041215A
(en)
AU
(1)
AU2549384A
(en)
DE
(1)
DE3471834D1
(en)
Families Citing this family (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS61241985A
(en)
*
1985-04-19
1986-10-28
Eizo Yamaga
Infrared-ray detector
US4719123A
(en)
*
1985-08-05
1988-01-12
Sanyo Electric Co., Ltd.
Method for fabricating periodically multilayered film
US5019887A
(en)
*
1987-03-27
1991-05-28
Canon Kabushiki Kaisha
Non-single crystalline photosensor with hydrogen and halogen
US4855797A
(en)
*
1987-07-06
1989-08-08
Siemens Corporate Research And Support, Inc.
Modulation doped high electron mobility transistor with n-i-p-i structure
JPH0234977A
(en)
*
1988-07-25
1990-02-05
Matsushita Electric Ind Co Ltd
Photodetector and manufacture thereof
JPH02107757A
(en)
*
1988-10-15
1990-04-19
Koji Hashimoto
Production of amorphous superlattice alloy
US5051786A
(en)
*
1989-10-24
1991-09-24
Mcnc
Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
JP2012212870A
(en)
*
2011-03-18
2012-11-01
Canon Inc
Photoconductive element
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4163237A
(en)
*
1978-04-24
1979-07-31
Bell Telephone Laboratories, Incorporated
High mobility multilayered heterojunction devices employing modulated doping
US4261771A
(en)
*
1979-10-31
1981-04-14
Bell Telephone Laboratories, Incorporated
Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
ES8302365A1
(en)
*
1980-09-09
1982-12-16
Energy Conversion Devices Inc
Stacked photoresponsive cells of amorphous semiconductors
1984
1984-03-09
DE
DE8484301599T
patent/DE3471834D1/en
not_active
Expired
1984-03-09
AU
AU25493/84A
patent/AU2549384A/en
not_active
Abandoned
1984-03-09
EP
EP84301599A
patent/EP0122047B1/en
not_active
Expired
1984-03-10
JP
JP59044858A
patent/JPS6041215A/en
active
Pending
Also Published As
Publication number
Publication date
DE3471834D1
(en)
1988-07-07
EP0122047A1
(en)
1984-10-17
EP0122047B1
(en)
1988-06-01
JPS6041215A
(en)
1985-03-04
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Sacks
None