AU3180371A - Creation of Inventions and Patents with Artificial Intelligence

AU3180371A – Integrated insulated-gate field effect transistor devices
– Google Patents

AU3180371A – Integrated insulated-gate field effect transistor devices
– Google Patents
Integrated insulated-gate field effect transistor devices

Info

Publication number
AU3180371A

AU3180371A
AU31803/71A
AU3180371A
AU3180371A
AU 3180371 A
AU3180371 A
AU 3180371A
AU 31803/71 A
AU31803/71 A
AU 31803/71A
AU 3180371 A
AU3180371 A
AU 3180371A
AU 3180371 A
AU3180371 A
AU 3180371A
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
gate field
transistor devices
integrated insulated
Prior art date
1970-09-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
AU31803/71A
Inventor
Utz Dr Baitinger
Hermann Frantz
Werner Haug
Rolf Dr Remshardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-09-02
Filing date
1971-07-29
Publication date
1973-02-01

1971-07-29
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp

1973-02-01
Publication of AU3180371A
publication
Critical
patent/AU3180371A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

230000005669
field effect
Effects

0.000
title
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions

H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration

H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L23/00—Details of semiconductor or other solid state devices

H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames

H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H—ELECTRICITY

H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

H10B—ELECTRONIC MEMORY DEVICES

H10B20/00—Read-only memory [ROM] devices

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/0001—Technical content checked by a classifier

H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

AU31803/71A
1970-09-02
1971-07-29
Integrated insulated-gate field effect transistor devices

Expired

AU3180371A
(en)

Applications Claiming Priority (2)

Application Number
Priority Date
Filing Date
Title

DE19702043405

DE2043405A1
(en)

1970-09-02
1970-09-02

Semiconductor arrangement with monolithically integrated insulating layer field effect transistors

DEDE82043

1970-09-04

Publications (1)

Publication Number
Publication Date

AU3180371A
true

AU3180371A
(en)

1973-02-01

Family
ID=5781308
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU31803/71A
Expired

AU3180371A
(en)

1970-09-02
1971-07-29
Integrated insulated-gate field effect transistor devices

Country Status (8)

Country
Link

AU
(1)

AU3180371A
(en)

BE
(1)

BE770898A
(en)

CH
(1)

CH534431A
(en)

DE
(1)

DE2043405A1
(en)

ES
(1)

ES394706A1
(en)

FR
(1)

FR2105176B1
(en)

GB
(1)

GB1353366A
(en)

NL
(1)

NL7112058A
(en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

FR2572851B1
(en)

1984-11-08
1987-07-31
Matra Harris Semiconducteurs

PREDIFFUSED NETWORK WITH INTERCONNECTABLE BASE CELLS

1970

1970-09-02
DE
DE19702043405
patent/DE2043405A1/en
active
Pending

1971

1971-07-20
FR
FR7127187A
patent/FR2105176B1/fr
not_active
Expired

1971-07-29
AU
AU31803/71A
patent/AU3180371A/en
not_active
Expired

1971-08-03
BE
BE770898A
patent/BE770898A/en
unknown

1971-08-31
GB
GB4055471A
patent/GB1353366A/en
not_active
Expired

1971-09-01
CH
CH1286271A
patent/CH534431A/en
not_active
IP Right Cessation

1971-09-01
NL
NL7112058A
patent/NL7112058A/xx
unknown

1971-09-01
ES
ES394706A
patent/ES394706A1/en
not_active
Expired

Also Published As

Publication number
Publication date

GB1353366A
(en)

1974-05-15

BE770898A
(en)

1971-12-16

NL7112058A
(en)

1972-03-06

CH534431A
(en)

1973-02-28

DE2043405A1
(en)

1972-03-16

FR2105176B1
(en)

1974-10-31

FR2105176A1
(en)

1972-04-28

ES394706A1
(en)

1975-11-01

Contact information