AU4356172A – Field effect transistor ina semiconductor body
– Google Patents
AU4356172A – Field effect transistor ina semiconductor body
– Google Patents
Field effect transistor ina semiconductor body
Info
Publication number
AU4356172A
AU4356172A
AU43561/72A
AU4356172A
AU4356172A
AU 4356172 A
AU4356172 A
AU 4356172A
AU 43561/72 A
AU43561/72 A
AU 43561/72A
AU 4356172 A
AU4356172 A
AU 4356172A
AU 4356172 A
AU4356172 A
AU 4356172A
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
semiconductor body
ina semiconductor
transistor ina
Prior art date
1971-07-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU43561/72A
Other versions
AU463429B2
(en
Inventor
Joshi Vishnuprakash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-07-05
Filing date
1972-06-19
Publication date
1974-01-03
1972-06-19
Application filed by Licentia Patent Verwaltungs GmbH
filed
Critical
Licentia Patent Verwaltungs GmbH
1974-01-03
Publication of AU4356172A
publication
Critical
patent/AU4356172A/en
1975-07-24
Application granted
granted
Critical
1975-07-24
Publication of AU463429B2
publication
Critical
patent/AU463429B2/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
230000005669
field effect
Effects
0.000
title
1
239000004065
semiconductor
Substances
0.000
title
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
AU43561/72A
1971-07-05
1972-06-19
Field effect transistor ina semiconductor body
Expired
AU463429B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
DEDE8213325
1971-07-05
DE19712133258
DE2133258A1
(en)
1971-07-05
1971-07-05
FIELD EFFECT TRANSISTOR FROM A SEMICONDUCTOR BODY
Publications (2)
Publication Number
Publication Date
AU4356172A
true
AU4356172A
(en)
1974-01-03
AU463429B2
AU463429B2
(en)
1975-07-24
Family
ID=5812651
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU43561/72A
Expired
AU463429B2
(en)
1971-07-05
1972-06-19
Field effect transistor ina semiconductor body
Country Status (2)
Country
Link
AU
(1)
AU463429B2
(en)
DE
(1)
DE2133258A1
(en)
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3672030D1
(en)
*
1985-01-30
1990-07-19
Toshiba Kawasaki Kk
SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF.
1971
1971-07-05
DE
DE19712133258
patent/DE2133258A1/en
active
Pending
1972
1972-06-19
AU
AU43561/72A
patent/AU463429B2/en
not_active
Expired
Also Published As
Publication number
Publication date
AU463429B2
(en)
1975-07-24
DE2133258A1
(en)
1973-01-25
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