AU470472B2

AU470472B2 – Write control circuit
– Google Patents

AU470472B2 – Write control circuit
– Google Patents
Write control circuit

Info

Publication number
AU470472B2

AU470472B2
AU43415/72A
AU4341572A
AU470472B2
AU 470472 B2
AU470472 B2
AU 470472B2
AU 43415/72 A
AU43415/72 A
AU 43415/72A
AU 4341572 A
AU4341572 A
AU 4341572A
AU 470472 B2
AU470472 B2
AU 470472B2
Authority
AU
Australia
Prior art keywords
control circuit
write control
write
circuit
control
Prior art date
1971-07-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
AU43415/72A
Other versions

AU4341572A
(en

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-07-16
Filing date
1972-06-14
Publication date
1973-12-20

1971-07-16
Priority claimed from DE19712135625
external-priority
patent/DE2135625C/en

1972-06-14
Application filed
filed
Critical

1973-12-20
Application granted
granted
Critical

1973-12-20
Publication of AU470472B2
publication
Critical
patent/AU470472B2/en

1973-12-20
Publication of AU4341572A
publication
Critical
patent/AU4341572A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback

H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback

H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator

H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements

G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only

G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements

G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements

G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type

G11C11/416—Read-write [R-W] circuits

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback

H03K3/037—Bistable circuits

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback

H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback

H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator

H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit

H03K3/2885—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration

AU43415/72A
1971-07-16
1972-06-14
Write control circuit

Expired

AU470472B2
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

DE19712135625

DE2135625C
(en)

1971-07-16

Circuit arrangement for automatic write suppression

Publications (2)

Publication Number
Publication Date

AU470472B2
true

AU470472B2
(en)

1973-12-20

AU4341572A

AU4341572A
(en)

1973-12-20

Family
ID=5813914
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

AU43415/72A
Expired

AU470472B2
(en)

1971-07-16
1972-06-14
Write control circuit

Country Status (15)

Country
Link

US
(1)

US3801965A
(en)

JP
(1)

JPS5235499B1
(en)

AR
(1)

AR193884A1
(en)

AT
(1)

AT319637B
(en)

AU
(1)

AU470472B2
(en)

BR
(1)

BR7204708D0
(en)

CA
(1)

CA986231A
(en)

CH
(1)

CH533888A
(en)

DE
(1)

DE2135625B1
(en)

ES
(1)

ES404058A1
(en)

FR
(1)

FR2146241B1
(en)

GB
(1)

GB1371686A
(en)

IT
(1)

IT956633B
(en)

NL
(1)

NL166813C
(en)

SE
(1)

SE384755B
(en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4090258A
(en)

*

1976-12-29
1978-05-16
Westinghouse Electric Corp.
MNOS non-volatile memory with write cycle suppression

DE2707297B1
(en)

*

1977-02-19
1978-05-24
Felten & Guilleaume Carlswerk

Process for the production of an insulating covering made of cross-linked insulating material

US4149270A
(en)

*

1977-09-26
1979-04-10
Westinghouse Electric Corp.
Variable threshold device memory circuit having automatic refresh feature

US4224533A
(en)

*

1978-08-07
1980-09-23
Signetics Corporation
Edge triggered flip flop with multiple clocked functions

FR2443723A1
(en)

*

1978-12-06
1980-07-04
Cii Honeywell Bull

DEVICE FOR REDUCING THE ACCESS TIME TO INFORMATION CONTAINED IN A MEMORY OF AN INFORMATION PROCESSING SYSTEM

DE2926514A1
(en)

*

1979-06-30
1981-01-15
Ibm Deutschland

ELECTRICAL MEMORY ARRANGEMENT AND METHOD FOR THEIR OPERATION

US4535428A
(en)

*

1983-03-10
1985-08-13
International Business Machines Corporation
Multi-port register implementations

US4577292A
(en)

*

1983-05-31
1986-03-18
International Business Machines Corporation
Support circuitry for multi-port systems

US4558433A
(en)

*

1983-05-31
1985-12-10
International Business Machines Corporation
Multi-port register implementations

US4616347A
(en)

*

1983-05-31
1986-10-07
International Business Machines Corporation
Multi-port system

US6002614A
(en)

1991-02-08
1999-12-14
Btg International Inc.
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell

US5218569A
(en)

1991-02-08
1993-06-08
Banks Gerald J
Electrically alterable non-volatile memory with n-bits per memory cell

US6353554B1
(en)

1995-02-27
2002-03-05
Btg International Inc.
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US2876352A
(en)

*

1955-12-27
1959-03-03
Bell Telephone Labor Inc
Self-correcting pulse circuits

US3008129A
(en)

*

1956-07-18
1961-11-07
Rca Corp
Memory systems

US3311893A
(en)

*

1963-08-29
1967-03-28
Sperry Rand Corp
Memory organization wherein only new data bits which are different from the old are recorded

US3413618A
(en)

*

1964-10-19
1968-11-26
Automatic Elect Lab
Memory apparatus employing a plurality of digit registers

US3423737A
(en)

*

1965-06-21
1969-01-21
Ibm
Nondestructive read transistor memory cell

US3504350A
(en)

*

1966-01-11
1970-03-31
Sperry Rand Corp
Flip-flop memory with minimized interconnection wiring

1971

1971-07-16
DE
DE2135625A
patent/DE2135625B1/en
active
Granted

1972

1972-02-09
US
US00224729A
patent/US3801965A/en
not_active
Expired – Lifetime

1972-02-10
AT
AT108872A
patent/AT319637B/en
not_active
IP Right Cessation

1972-06-07
GB
GB2650672A
patent/GB1371686A/en
not_active
Expired

1972-06-08
CH
CH855672A
patent/CH533888A/en
not_active
IP Right Cessation

1972-06-14
AU
AU43415/72A
patent/AU470472B2/en
not_active
Expired

1972-06-16
SE
SE7207945A
patent/SE384755B/en
unknown

1972-06-16
IT
IT25760/72A
patent/IT956633B/en
active

1972-06-20
ES
ES404058A
patent/ES404058A1/en
not_active
Expired

1972-06-28
JP
JP47064145A
patent/JPS5235499B1/ja
active
Pending

1972-06-30
FR
FR7224823*A
patent/FR2146241B1/fr
not_active
Expired

1972-07-06
CA
CA146,449A
patent/CA986231A/en
not_active
Expired

1972-07-11
NL
NL7209577.A
patent/NL166813C/en
not_active
IP Right Cessation

1972-07-14
BR
BR4708/72A
patent/BR7204708D0/en
unknown

1972-07-14
AR
AR243087A
patent/AR193884A1/en
active

Also Published As

Publication number
Publication date

CH533888A
(en)

1973-02-15

JPS5235499B1
(en)

1977-09-09

ES404058A1
(en)

1975-06-01

NL7209577A
(en)

1973-01-18

US3801965A
(en)

1974-04-02

AR193884A1
(en)

1973-05-31

AT319637B
(en)

1974-12-27

GB1371686A
(en)

1974-10-23

SE384755B
(en)

1976-05-17

FR2146241B1
(en)

1976-10-29

CA986231A
(en)

1976-03-23

NL166813C
(en)

1981-09-15

IT956633B
(en)

1973-10-10

DE2135625B1
(en)

1973-01-04

AU4341572A
(en)

1973-12-20

BR7204708D0
(en)

1973-07-10

FR2146241A1
(en)

1973-03-02

NL166813B
(en)

1981-04-15

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