AU540064B2 – Amorphous silicon photocell
– Google Patents
AU540064B2 – Amorphous silicon photocell
– Google Patents
Amorphous silicon photocell
Info
Publication number
AU540064B2
AU540064B2
AU64984/80A
AU6498480A
AU540064B2
AU 540064 B2
AU540064 B2
AU 540064B2
AU 64984/80 A
AU64984/80 A
AU 64984/80A
AU 6498480 A
AU6498480 A
AU 6498480A
AU 540064 B2
AU540064 B2
AU 540064B2
Authority
AU
Australia
Prior art keywords
amorphous silicon
silicon photocell
photocell
amorphous
silicon
Prior art date
1979-12-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU64984/80A
Other versions
AU6498480A
(en
Inventor
Bruce Perret Myers
Christopher Roman Wronski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1979-12-03
Filing date
1980-12-02
Publication date
1984-11-01
1980-12-02
Application filed by Exxon Research and Engineering Co
filed
Critical
Exxon Research and Engineering Co
1981-06-11
Publication of AU6498480A
publication
Critical
patent/AU6498480A/en
1984-11-01
Application granted
granted
Critical
1984-11-01
Publication of AU540064B2
publication
Critical
patent/AU540064B2/en
2000-12-02
Anticipated expiration
legal-status
Critical
Status
Ceased
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
229910021417
amorphous silicon
Inorganic materials
0.000
title
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/00—Energy generation through renewable energy sources
Y02E10/50—Photovoltaic [PV] energy
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/153—Solar cells-implantations-laser beam
AU64984/80A
1979-12-03
1980-12-02
Amorphous silicon photocell
Ceased
AU540064B2
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US99421
1979-12-03
US06/099,421
US4266984A
(en)
1979-12-03
1979-12-03
Enhanced open circuit voltage in amorphous silicon photovoltaic devices
Publications (2)
Publication Number
Publication Date
AU6498480A
AU6498480A
(en)
1981-06-11
AU540064B2
true
AU540064B2
(en)
1984-11-01
Family
ID=22274927
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
AU64984/80A
Ceased
AU540064B2
(en)
1979-12-03
1980-12-02
Amorphous silicon photocell
Country Status (8)
Country
Link
US
(1)
US4266984A
(en)
JP
(1)
JPS5693378A
(en)
AU
(1)
AU540064B2
(en)
CA
(1)
CA1170345A
(en)
DE
(1)
DE3045194A1
(en)
FR
(1)
FR2471671A1
(en)
GB
(1)
GB2064867B
(en)
IT
(1)
IT1134557B
(en)
Families Citing this family (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4226897A
(en)
*
1977-12-05
1980-10-07
Plasma Physics Corporation
Method of forming semiconducting materials and barriers
EP0035146B1
(en)
*
1980-02-15
1988-10-12
Matsushita Electric Industrial Co., Ltd.
Semiconductor photoelectric device
US4471036A
(en)
*
1983-06-29
1984-09-11
The United States Of America As Represented By The United States Department Of Energy
Electrochemical photovoltaic cells and electrodes
EP0153043A3
(en)
*
1984-02-15
1986-09-24
Energy Conversion Devices, Inc.
Ohmic contact layer
US5155565A
(en)
*
1988-02-05
1992-10-13
Minnesota Mining And Manufacturing Company
Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US20160181456A1
(en)
*
2014-12-22
2016-06-23
Yong-Hang Zhang
Low-Cost and High-Efficiency Tandem Photovoltaic Cells
Family Cites Families (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4064521A
(en)
*
1975-07-28
1977-12-20
Rca Corporation
Semiconductor device having a body of amorphous silicon
FR2413780A1
(en)
*
1977-12-29
1979-07-27
Thomson Csf
PROCESS FOR MAKING A “METAL-SEMI-CONDUCTIVE” CONTACT WITH A POTENTIAL BARRIER OF PREDETERMINED HEIGHT, AND SEMICONDUCTOR COMPONENT INCLUDING AT LEAST ONE CONTACT OBTAINED BY THIS PROCESS
1979
1979-12-03
US
US06/099,421
patent/US4266984A/en
not_active
Expired – Lifetime
1980
1980-10-02
CA
CA000361399A
patent/CA1170345A/en
not_active
Expired
1980-12-01
DE
DE19803045194
patent/DE3045194A1/en
not_active
Withdrawn
1980-12-02
AU
AU64984/80A
patent/AU540064B2/en
not_active
Ceased
1980-12-02
IT
IT8026379A
patent/IT1134557B/en
active
1980-12-03
JP
JP16972580A
patent/JPS5693378A/en
active
Pending
1980-12-03
FR
FR8025651A
patent/FR2471671A1/en
active
Granted
1980-12-03
GB
GB8038798A
patent/GB2064867B/en
not_active
Expired
Also Published As
Publication number
Publication date
IT8026379D0
(en)
1980-12-02
AU6498480A
(en)
1981-06-11
US4266984A
(en)
1981-05-12
DE3045194A1
(en)
1981-09-03
CA1170345A
(en)
1984-07-03
JPS5693378A
(en)
1981-07-28
GB2064867B
(en)
1983-06-08
FR2471671A1
(en)
1981-06-19
IT1134557B
(en)
1986-08-13
FR2471671B1
(en)
1985-04-26
GB2064867A
(en)
1981-06-17
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