GB1003482A – Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
– Google Patents
GB1003482A – Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
– Google Patents
Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
Info
Publication number
GB1003482A
GB1003482A
GB45389/62A
GB4538962A
GB1003482A
GB 1003482 A
GB1003482 A
GB 1003482A
GB 45389/62 A
GB45389/62 A
GB 45389/62A
GB 4538962 A
GB4538962 A
GB 4538962A
GB 1003482 A
GB1003482 A
GB 1003482A
Authority
GB
United Kingdom
Prior art keywords
conductor
bond
heated
silicone resin
joining
Prior art date
1961-12-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45389/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1961-12-04
Filing date
1962-11-30
Publication date
1965-09-02
1962-11-30
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd
1965-09-02
Publication of GB1003482A
publication
Critical
patent/GB1003482A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
H01L23/3157—Partial encapsulation or coating
H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
H01L23/3157—Partial encapsulation or coating
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/02—Bonding areas ; Manufacturing methods related thereto
H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
H01L2224/45124—Aluminium (Al) as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
H01L2224/45144—Gold (Au) as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/484—Connecting portions
H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/485—Material
H01L2224/48505—Material at the bonding interface
H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/485—Material
H01L2224/48505—Material at the bonding interface
H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H01L2224/852—Applying energy for connecting
H01L2224/85201—Compression bonding
H01L2224/85203—Thermocompression bonding
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01006—Carbon [C]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01013—Aluminum [Al]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01019—Potassium [K]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01032—Germanium [Ge]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01049—Indium [In]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01051—Antimony [Sb]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01074—Tungsten [W]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01079—Gold [Au]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/0132—Binary Alloys
H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/014—Solder alloys
Abstract
1,003,482. Equi-conductor devices. PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES Ltd. Nov. 30, 1962 [Dec. 4, 1961], No. 45389/62. Heading H1K. A method of joining a conductor to a semiconductor body comprises , forming a thermocompression bond between them and then surrounding the joint with a rigid material and heating the assembly to at least the eutectic temperature of the combination of the conductor and semi-conductor materials to effect a final alloying process. A semi-conductor wafer, comprising a P-type germanium body 1 with a circular N-type layer 4, the body being soldered, 3, to a nickel plate 4, is produced as described in Specification 1,002,845. The wafer is then heated to 200‹ C. and an aluminium wire is pressed on to the N-type layer 2, using a sapphire head, to form a thermo–compression bond 13. A drop 12 of silicone resin is applied to the bond and when it has hardened the assembly is heated to the eutectic temperature of germanium and aluminium, 424‹ C., for 1 second to affect a final alloying process for the emitter region formed by the bond. A gold wire 15 is similarly bonded at 16 to the layer 2 to form an ohmic base contact which is then supported by a drop 17 of silicone resin and heated to 356‹ C. When the temperatures required for the final alloying processes are higher than that at which the resin can be used, a mixture of alumina, ethylglycol, butanol and nitro-cellulose may be used to support the joints during the heating process and is then removed and replaced by a silicone resin which has better electrical properties.
GB45389/62A
1961-12-04
1962-11-30
Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
Expired
GB1003482A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
BE487257
1961-12-04
Publications (1)
Publication Number
Publication Date
GB1003482A
true
GB1003482A
(en)
1965-09-02
Family
ID=3844623
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB45389/62A
Expired
GB1003482A
(en)
1961-12-04
1962-11-30
Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
Country Status (4)
Country
Link
AT
(1)
AT239854B
(en)
FR
(1)
FR1340092A
(en)
GB
(1)
GB1003482A
(en)
NL
(1)
NL286149A
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JP2005112961A
(en)
*
2003-10-07
2005-04-28
Shin Etsu Chem Co Ltd
Curable organopolysiloxane composition and semiconductor apparatus
JP2010095730A
(en)
*
2010-01-18
2010-04-30
Shin-Etsu Chemical Co Ltd
Curable organopolysiloxane composition and semiconductor apparatus
Families Citing this family (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3641524A1
(en)
*
1985-12-10
1987-06-11
Mitsubishi Electric Corp
Method of fabricating a semiconductor component
JPH0817189B2
(en)
*
1989-01-13
1996-02-21
三菱電機株式会社
Method for manufacturing semiconductor device
0
NL
NL286149D
patent/NL286149A/xx
unknown
1962
1962-11-30
GB
GB45389/62A
patent/GB1003482A/en
not_active
Expired
1962-12-03
AT
AT945762A
patent/AT239854B/en
active
1962-12-03
FR
FR917359A
patent/FR1340092A/en
not_active
Expired
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JP2005112961A
(en)
*
2003-10-07
2005-04-28
Shin Etsu Chem Co Ltd
Curable organopolysiloxane composition and semiconductor apparatus
JP4551074B2
(en)
*
2003-10-07
2010-09-22
信越化学工業株式会社
Curable organopolysiloxane composition and semiconductor device
JP2010095730A
(en)
*
2010-01-18
2010-04-30
Shin-Etsu Chemical Co Ltd
Curable organopolysiloxane composition and semiconductor apparatus
Also Published As
Publication number
Publication date
FR1340092A
(en)
1963-10-11
AT239854B
(en)
1965-04-26
NL286149A
(en)
1900-01-01
Similar Documents
Publication
Publication Date
Title
FR1179416A
(en)
1959-05-25
Joining a metal to semiconductors by thermo-compression
US3228104A
(en)
1966-01-11
Method of attaching an electric connection to a semiconductor device
US3397451A
(en)
1968-08-20
Sequential wire and articlebonding methods
US2705768A
(en)
1955-04-05
Semiconductor signal translating devices and method of fabrication
GB1440545A
(en)
1976-06-23
Semiconductor device including a chip bonded to a metal surface
US3125803A
(en)
1964-03-24
Terminals
KR880008437A
(en)
1988-08-31
Semiconductor device, manufacturing method thereof and wire bonding apparatus used therein
GB881833A
(en)
1961-11-08
Improvements in or relating to semiconductor devices and in methods of making such devices
US3478420A
(en)
1969-11-18
Method of providing contact leads for semiconductors
GB1060397A
(en)
1967-03-01
Improvements in and relating to the manufacture of semiconductor devices
GB1296348A
(en)
1972-11-15
US3024519A
(en)
1962-03-13
Cold weld semiconductor housing
GB1003482A
(en)
1965-09-02
Improvements in and relating to methods of joining a metal conductor to a semiconduct or body
US3217401A
(en)
1965-11-16
Method of attaching metallic heads to silicon layers of semiconductor devices
US2887415A
(en)
1959-05-19
Method of making alloyed junction in a silicon wafer
US3233309A
(en)
1966-02-08
Method of producing electrically asymmetrical semiconductor device of symmetrical mechanical design
US3197839A
(en)
1965-08-03
Method of fabricating semiconductor devices
US3227933A
(en)
1966-01-04
Diode and contact structure
US3555669A
(en)
1971-01-19
Process for soldering silicon wafers to contacts
GB1010698A
(en)
1965-11-24
Soldering connecting wires to semiconductor bodies
GB1016343A
(en)
1966-01-12
Semiconductor device and method of making the same
US3032695A
(en)
1962-05-01
Alloyed junction semiconductive device
GB1156146A
(en)
1969-06-25
Method of making Contact to Semiconductor Components
US3324361A
(en)
1967-06-06
Semiconductor contact alloy
US2948836A
(en)
1960-08-09
Electrode connections to semiconductive bodies
None