GB1040909A – Improvements in or relating to the production of crystalline semiconductor materials
– Google Patents
GB1040909A – Improvements in or relating to the production of crystalline semiconductor materials
– Google Patents
Improvements in or relating to the production of crystalline semiconductor materials
Info
Publication number
GB1040909A
GB1040909A
GB35513/63A
GB3551363A
GB1040909A
GB 1040909 A
GB1040909 A
GB 1040909A
GB 35513/63 A
GB35513/63 A
GB 35513/63A
GB 3551363 A
GB3551363 A
GB 3551363A
GB 1040909 A
GB1040909 A
GB 1040909A
Authority
GB
United Kingdom
Prior art keywords
gallium
reaction chamber
pcl3
phosphorus
gallium phosphide
Prior art date
1962-09-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35513/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1962-09-18
Filing date
1963-09-09
Publication date
1966-09-01
1963-09-09
Application filed by Merck and Co Inc
filed
Critical
Merck and Co Inc
1966-09-01
Publication of GB1040909A
publication
Critical
patent/GB1040909A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/10—Inorganic compounds or compositions
C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C—CHEMISTRY; METALLURGY
C01—INORGANIC CHEMISTRY
C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
C01B25/00—Phosphorus; Compounds thereof
C01B25/06—Hydrogen phosphides
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B25/005—Growth of whiskers or needles
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C30B29/62—Whiskers or needles
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Abstract
Gallium phosphide is prepared in the form of blade-shaped crystals by charging one end of an open elongated reaction chamber with metallic gallium in a quantity insufficient to dissolve any gallium phosphide formed, heating the end of the chamber containing the gallium to a temperature in the range 800-1200 DEG C. to transform the gallium to the vapour phase and contacting the heated element with a halogen compound of phosphorus, thereby to form crystal blades of gallium phosphide in a cooler region having a temperature of 600-900 DEG C. at the other end of the reaction chamber. The exit regions of the reaction chamber are preferably heated to 1050 DEG C. so as to volatilize the by-products of the reaction and assist their removal. The halogen compound of phosphorus is preferably PCl3 and is preferably introduced from a source external to the reaction chamber by passing the gas over liquid PCl3 at 0 DEG C. at a flow-rate of 70 ml./minute.
GB35513/63A
1962-09-18
1963-09-09
Improvements in or relating to the production of crystalline semiconductor materials
Expired
GB1040909A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US224486A
US3306713A
(en)
1962-09-18
1962-09-18
Semiconductor process and products produced thereby
Publications (1)
Publication Number
Publication Date
GB1040909A
true
GB1040909A
(en)
1966-09-01
Family
ID=22840915
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB35513/63A
Expired
GB1040909A
(en)
1962-09-18
1963-09-09
Improvements in or relating to the production of crystalline semiconductor materials
Country Status (3)
Country
Link
US
(1)
US3306713A
(en)
DE
(1)
DE1444515A1
(en)
GB
(1)
GB1040909A
(en)
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2902350A
(en)
*
1954-12-21
1959-09-01
Rca Corp
Method for single crystal growth
US2858275A
(en)
*
1954-12-23
1958-10-28
Siemens Ag
Mixed-crystal semiconductor devices
BE618264A
(en)
*
1959-06-18
US3145125A
(en)
*
1961-07-10
1964-08-18
Ibm
Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions
1962
1962-09-18
US
US224486A
patent/US3306713A/en
not_active
Expired – Lifetime
1963
1963-09-09
GB
GB35513/63A
patent/GB1040909A/en
not_active
Expired
1963-09-11
DE
DE19631444515
patent/DE1444515A1/en
active
Pending
Also Published As
Publication number
Publication date
US3306713A
(en)
1967-02-28
DE1444515A1
(en)
1968-10-24
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