GB1041681A - Creation of Inventions and Patents with Artificial Intelligence

GB1041681A – Switching transistor structure and method of making same
– Google Patents

GB1041681A – Switching transistor structure and method of making same
– Google Patents
Switching transistor structure and method of making same

Info

Publication number
GB1041681A

GB1041681A
GB11548/65A
GB1154865A
GB1041681A
GB 1041681 A
GB1041681 A
GB 1041681A
GB 11548/65 A
GB11548/65 A
GB 11548/65A
GB 1154865 A
GB1154865 A
GB 1154865A
GB 1041681 A
GB1041681 A
GB 1041681A
Authority
GB
United Kingdom
Prior art keywords
region
type
layer
wafer
type impurity
Prior art date
1964-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB11548/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CBS Corp

Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-03-20
Filing date
1965-03-18
Publication date
1966-09-07

1965-03-18
Application filed by Westinghouse Electric Corp
filed
Critical
Westinghouse Electric Corp

1966-09-07
Publication of GB1041681A
publication
Critical
patent/GB1041681A/en

1969-03-13
Priority to GB1325569A
priority
Critical
patent/GB1259867A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

238000004519
manufacturing process
Methods

0.000
title
1

239000012535
impurity
Substances

0.000
abstract
5

238000000151
deposition
Methods

0.000
abstract
3

238000000034
method
Methods

0.000
abstract
2

239000000758
substrate
Substances

0.000
abstract
2

XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound

[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1

229910052782
aluminium
Inorganic materials

0.000
abstract
1

239000004411
aluminium
Substances

0.000
abstract
1

229910052785
arsenic
Inorganic materials

0.000
abstract
1

RQNWIZPPADIBDY-UHFFFAOYSA-N
arsenic atom
Chemical compound

[As]
RQNWIZPPADIBDY-UHFFFAOYSA-N
0.000
abstract
1

230000008021
deposition
Effects

0.000
abstract
1

238000009792
diffusion process
Methods

0.000
abstract
1

BHEPBYXIRTUNPN-UHFFFAOYSA-N
hydridophosphorus(.) (triplet)
Chemical compound

[PH]
BHEPBYXIRTUNPN-UHFFFAOYSA-N
0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L29/0821—Collector regions of bipolar transistors

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/037—Diffusion-deposition

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/085—Isolated-integrated

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/151—Simultaneous diffusion

Abstract

1,041,681. Transistors. WESTINGHOUSE ELECTRIC CORPORATION. March 18, 1965 [March 20, 1964], No. 11548/65. Heading H1K. In a transistor formed by the planar process a highly doped part of the collector region is connected to the top surface of the wafer by a highly doped ” wall “. As shown, N+ and N- type layers 112, 113 are provided on a P-type substrate 110 by epitaxial deposition or by diffusing arsenic into substrate 110 to form layer 112 and then epitaxially depositing layer 113. P-type impurity is deposited on the surface of layer 113, using a photolithographic technique to form an oxide mask, and is then driven through layers 113, 112 to form P type region 116 which surrounds and isolates part of the wafer which is to form the transistor. N-type impurity, such as phosphorous, is deposited inside this region so that during the subsequent diffusions of base region 118 and emitter region 120 it is driven through layer 113 to form N+ type region 122 which contacts layer 112. Since N-type impurity diffuses faster than P-type impurity into an N-type region, region 122 is driven further than region 118 and may even reach layer 112 at this stage. Aluminium contacts 123, 124, 125 are applied to emitter region 120, base region 118 and collector region 122 respectively through apertures in an oxide layer 115. The base and collector contacts may have gaps through which deposited conductive strips may pass to connect the transistor to other components of an integrated circuit produced in the wafer. Region 122 may also be produced at the same time as region 116 by depositing the N-type and P-type impurities and then driving both into the wafer.

GB11548/65A
1964-03-20
1965-03-18
Switching transistor structure and method of making same

Expired

GB1041681A
(en)

Priority Applications (1)

Application Number
Priority Date
Filing Date
Title

GB1325569A

GB1259867A
(en)

1965-03-18
1969-03-13
Transistor structures for integrated circuits and method of making the same

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US353524A

US3341755A
(en)

1964-03-20
1964-03-20
Switching transistor structure and method of making the same

Publications (1)

Publication Number
Publication Date

GB1041681A
true

GB1041681A
(en)

1966-09-07

Family
ID=23389487
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB11548/65A
Expired

GB1041681A
(en)

1964-03-20
1965-03-18
Switching transistor structure and method of making same

Country Status (4)

Country
Link

US
(1)

US3341755A
(en)

BE
(1)

BE661403A
(en)

DE
(1)

DE1539079B2
(en)

GB
(1)

GB1041681A
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2245425A
(en)

1990-06-22
1992-01-02
Gen Electric Co Plc
A verticle pnp transistor

Families Citing this family (21)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3384791A
(en)

1964-09-10
1968-05-21
Nippon Electric Co
High frequency semiconductor diode

NL6606083A
(en)

1965-06-22
1967-11-06
Philips Nv

US3475664A
(en)

1965-06-30
1969-10-28
Texas Instruments Inc
Ambient atmosphere isolated semiconductor devices

US3430110A
(en)

1965-12-02
1969-02-25
Rca Corp
Monolithic integrated circuits with a plurality of isolation zones

US3440502A
(en)

1966-07-05
1969-04-22
Westinghouse Electric Corp
Insulated gate field effect transistor structure with reduced current leakage

FR155459A
(en)

1967-01-23

US3538397A
(en)

1967-05-09
1970-11-03
Motorola Inc
Distributed semiconductor power supplies and decoupling capacitor therefor

US3440503A
(en)

1967-05-31
1969-04-22
Westinghouse Electric Corp
Integrated complementary mos-type transistor structure and method of making same

US3653988A
(en)

1968-02-05
1972-04-04
Bell Telephone Labor Inc
Method of forming monolithic semiconductor integrated circuit devices

US3648128A
(en)

1968-05-25
1972-03-07
Sony Corp
An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions

US3638081A
(en)

1968-08-13
1972-01-25
Ibm
Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element

US3569800A
(en)

1968-09-04
1971-03-09
Ibm
Resistively isolated integrated current switch

US3547716A
(en)

1968-09-05
1970-12-15
Ibm
Isolation in epitaxially grown monolithic devices

US3539884A
(en)

1968-09-18
1970-11-10
Motorola Inc
Integrated transistor and variable capacitor

US3648125A
(en)

1971-02-02
1972-03-07
Fairchild Camera Instr Co
Method of fabricating integrated circuits with oxidized isolation and the resulting structure

US3878551A
(en)

1971-11-30
1975-04-15
Texas Instruments Inc
Semiconductor integrated circuits having improved electrical isolation characteristics

JPS4933758U
(en)

1972-06-26
1974-03-25

US3858234A
(en)

1973-01-08
1974-12-31
Motorola Inc
Transistor having improved safe operating area

US3992232A
(en)

1973-08-06
1976-11-16
Hitachi, Ltd.
Method of manufacturing semiconductor device having oxide isolation structure and guard ring

JPS5753963A
(en)

1980-09-17
1982-03-31
Toshiba Corp
Semiconductor device

JP3730483B2
(en)

2000-06-30
2006-01-05
株式会社東芝

Bipolar transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3176376A
(en)

1958-04-24
1965-04-06
Motorola Inc
Method of making semiconductor device

GB945740A
(en)

1959-02-06

Texas Instruments Inc

US3173069A
(en)

1961-02-15
1965-03-09
Westinghouse Electric Corp
High gain transistor

US3178798A
(en)

1962-05-09
1965-04-20
Ibm
Vapor deposition process wherein the vapor contains both donor and acceptor impurities

NL302804A
(en)

1962-08-23
1900-01-01

US3229119A
(en)

1963-05-17
1966-01-11
Sylvania Electric Prod
Transistor logic circuits

GB1050417A
(en)

1963-07-09

1964

1964-03-20
US
US353524A
patent/US3341755A/en
not_active
Expired – Lifetime

1965

1965-03-18
GB
GB11548/65A
patent/GB1041681A/en
not_active
Expired

1965-03-19
DE
DE1539079A
patent/DE1539079B2/en
active
Pending

1965-03-19
BE
BE661403D
patent/BE661403A/xx
unknown

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2245425A
(en)

1990-06-22
1992-01-02
Gen Electric Co Plc
A verticle pnp transistor

Also Published As

Publication number
Publication date

US3341755A
(en)

1967-09-12

BE661403A
(en)

1965-07-16

DE1539079B2
(en)

1973-12-06

DE1539079A1
(en)

1969-06-26

Contact information