GB1046155A – Improvements in or relating to the manufacture of transistors
– Google Patents
GB1046155A – Improvements in or relating to the manufacture of transistors
– Google Patents
Improvements in or relating to the manufacture of transistors
Info
Publication number
GB1046155A
GB1046155A
GB750465A
GB750465A
GB1046155A
GB 1046155 A
GB1046155 A
GB 1046155A
GB 750465 A
GB750465 A
GB 750465A
GB 750465 A
GB750465 A
GB 750465A
GB 1046155 A
GB1046155 A
GB 1046155A
Authority
GB
United Kingdom
Prior art keywords
zone
masking
aperture
donor
diffused
Prior art date
1964-02-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB750465A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-02-24
Filing date
1965-02-22
Publication date
1966-10-19
1965-02-22
Application filed by Siemens and Halske AG, Siemens AG
filed
Critical
Siemens and Halske AG
1966-10-19
Publication of GB1046155A
publication
Critical
patent/GB1046155A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
238000004519
manufacturing process
Methods
0.000
title
abstract
2
230000000873
masking effect
Effects
0.000
abstract
6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
4
239000012535
impurity
Substances
0.000
abstract
3
VEXZGXHMUGYJMC-UHFFFAOYSA-N
Hydrochloric acid
Chemical compound
Cl
VEXZGXHMUGYJMC-UHFFFAOYSA-N
0.000
abstract
2
MHAJPDPJQMAIIY-UHFFFAOYSA-N
Hydrogen peroxide
Chemical compound
OO
MHAJPDPJQMAIIY-UHFFFAOYSA-N
0.000
abstract
2
238000005530
etching
Methods
0.000
abstract
2
238000000034
method
Methods
0.000
abstract
2
239000000377
silicon dioxide
Substances
0.000
abstract
2
LIVNPJMFVYWSIS-UHFFFAOYSA-N
silicon monoxide
Chemical compound
[Si-]#[O+]
LIVNPJMFVYWSIS-UHFFFAOYSA-N
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
GYHNNYVSQQEPJS-UHFFFAOYSA-N
Gallium
Chemical compound
[Ga]
GYHNNYVSQQEPJS-UHFFFAOYSA-N
0.000
abstract
1
WHXSMMKQMYFTQS-UHFFFAOYSA-N
Lithium
Chemical compound
[Li]
WHXSMMKQMYFTQS-UHFFFAOYSA-N
0.000
abstract
1
OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical group
[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
1
HCHKCACWOHOZIP-UHFFFAOYSA-N
Zinc
Chemical compound
[Zn]
HCHKCACWOHOZIP-UHFFFAOYSA-N
0.000
abstract
1
PNEYBMLMFCGWSK-UHFFFAOYSA-N
aluminium oxide
Inorganic materials
[O-2].[O-2].[O-2].[Al+3].[Al+3]
PNEYBMLMFCGWSK-UHFFFAOYSA-N
0.000
abstract
1
229910052787
antimony
Inorganic materials
0.000
abstract
1
WATWJIUSRGPENY-UHFFFAOYSA-N
antimony atom
Chemical compound
[Sb]
WATWJIUSRGPENY-UHFFFAOYSA-N
0.000
abstract
1
229910052785
arsenic
Inorganic materials
0.000
abstract
1
RQNWIZPPADIBDY-UHFFFAOYSA-N
arsenic atom
Chemical compound
[As]
RQNWIZPPADIBDY-UHFFFAOYSA-N
0.000
abstract
1
QVGXLLKOCUKJST-UHFFFAOYSA-N
atomic oxygen
Chemical compound
[O]
QVGXLLKOCUKJST-UHFFFAOYSA-N
0.000
abstract
1
230000015572
biosynthetic process
Effects
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
238000006243
chemical reaction
Methods
0.000
abstract
1
238000009792
diffusion process
Methods
0.000
abstract
1
230000000694
effects
Effects
0.000
abstract
1
230000008020
evaporation
Effects
0.000
abstract
1
238000001704
evaporation
Methods
0.000
abstract
1
229910052733
gallium
Inorganic materials
0.000
abstract
1
229910052732
germanium
Inorganic materials
0.000
abstract
1
GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound
[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
1
229910052738
indium
Inorganic materials
0.000
abstract
1
APFVFJFRJDLVQX-UHFFFAOYSA-N
indium atom
Chemical compound
[In]
APFVFJFRJDLVQX-UHFFFAOYSA-N
0.000
abstract
1
239000011261
inert gas
Substances
0.000
abstract
1
229910052744
lithium
Inorganic materials
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
239000000203
mixture
Substances
0.000
abstract
1
239000001301
oxygen
Substances
0.000
abstract
1
229910052760
oxygen
Inorganic materials
0.000
abstract
1
229910052698
phosphorus
Inorganic materials
0.000
abstract
1
239000011574
phosphorus
Substances
0.000
abstract
1
238000001556
precipitation
Methods
0.000
abstract
1
239000012495
reaction gas
Substances
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
229910052710
silicon
Inorganic materials
0.000
abstract
1
239000010703
silicon
Substances
0.000
abstract
1
229910052725
zinc
Inorganic materials
0.000
abstract
1
239000011701
zinc
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/73—Bipolar junction transistors
Abstract
1,046,155. Transistors. SIEMENS & HALSKE A.G. Feb. 22, 1965 [Feb. 24, 1964], No. 7504/65. Heading H1K. A transistor is made by vapour diffusing into a body or zone of semi-conductor material of N(P) conductivity type on acceptor (donor) impurity through a masking layer pervious thereto, then forming an aperture through the masking and continuing the diffusion to form an N(P) zone, and finally vapour diffusing a donor (acceptor) impurity to which the masking is impervious through the aperture to form a P(N) zone within the diffused N(P) zone. An NPN germanium transistor is made in this way using a masking layer of silica or alumina on an N-type wafer, zinc, indium or gallium as the acceptor impurity and arsenic, antimony or phosphorus as donor. If a PNP transistor is required from a P-type collector wafer, lithium is diffused to form the base and boron to form the emitter. In a preferred method, immediately after formation of the aperture by etching in hydrochloric acid, the thickness of the diffused zone under the aperture is reduced by etching in hydrogen peroxide. After electrodes have been attached e.g. by thermocompression bonding the masking layer may be reinforced to protect the device. Silica masking may be formed by evaporation, or by precipitation from a reaction gas e.g. a mixture of silicon monoxide and oxygen, or of an alkoxysilane and inert gas. Reaction temperature may be reduced by using the ionizing effect of a glow discharge. Application of the method to manufacture of hook collector transistors and the use of silicon are also suggested.
GB750465A
1964-02-24
1965-02-22
Improvements in or relating to the manufacture of transistors
Expired
GB1046155A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DES0089653
1964-02-24
Publications (1)
Publication Number
Publication Date
GB1046155A
true
GB1046155A
(en)
1966-10-19
Family
ID=7515257
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB750465A
Expired
GB1046155A
(en)
1964-02-24
1965-02-22
Improvements in or relating to the manufacture of transistors
Country Status (3)
Country
Link
FR
(1)
FR1425087A
(en)
GB
(1)
GB1046155A
(en)
NL
(1)
NL6502122A
(en)
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2445480A1
(en)
*
1974-09-24
1976-04-01
Ibm Deutschland
METHOD OF MANUFACTURING A POWER TRANSISTOR
1965
1965-02-19
NL
NL6502122A
patent/NL6502122A/xx
unknown
1965-02-22
FR
FR6500A
patent/FR1425087A/en
not_active
Expired
1965-02-22
GB
GB750465A
patent/GB1046155A/en
not_active
Expired
Also Published As
Publication number
Publication date
NL6502122A
(en)
1965-08-25
FR1425087A
(en)
1966-01-14
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