GB1060542A - Creation of Inventions and Patents with Artificial Intelligence

GB1060542A – Logic circuits which employ transistors
– Google Patents

GB1060542A – Logic circuits which employ transistors
– Google Patents
Logic circuits which employ transistors

Info

Publication number
GB1060542A

GB1060542A
GB11737/64A
GB1173764A
GB1060542A
GB 1060542 A
GB1060542 A
GB 1060542A
GB 11737/64 A
GB11737/64 A
GB 11737/64A
GB 1173764 A
GB1173764 A
GB 1173764A
GB 1060542 A
GB1060542 A
GB 1060542A
Authority
GB
United Kingdom
Prior art keywords
transistor
diodes
circuits
logic
silicon
Prior art date
1963-04-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB11737/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-04-01
Filing date
1964-03-19
Publication date
1967-03-08

1964-03-19
Application filed by RCA Corp, Radio Corporation of America
filed
Critical
RCA Corp

1967-03-08
Publication of GB1060542A
publication
Critical
patent/GB1060542A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body

H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region

H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type

H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor

H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

H03K19/01—Modifications for accelerating switching

H03K19/013—Modifications for accelerating switching in bipolar transistor circuits

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

H03K19/0175—Coupling arrangements; Interface arrangements

H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only

H03K19/01806—Interface arrangements

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components

H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices

H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors

Abstract

1,060,542. Transistor logic circuits. RADIO CORPORATION OF AMERICA. March 19, 1964 [April 1, 1963], No. 11737/64. Heading H3T. In a logic circuit, one transistor is coupled to a further transistor by means of at least one level shifting diode having a diffusion capacitance that varies as a function of current. Fig. 1 shows part of a logic circuit in which a gold-doped silicon epitaxial transistor 50 has three diodes 56 forming part of the collector region and is coupled via level shifting silicon diodes 38, 40 to a similar transistor 20. Transistor 50 is saturated by a positive logic signal at its base so that the voltage at node 42 cuts off diodes 38, 40 and transistor 20. When a negative logic signal is received by the base of transistor 50 this transistor is cut off so that the voltage at node 42 turns on diodes 38, 40 and transistor 20. The switching times are reduced by the action of the current-dependent capacitance of diodes 38, 40. The Specification explains how diodes 38, 40, 56 minimize reflections in the transmission line 54 and provide a degree of noise immunity. The bias current supplied by source 48 should be a specified function of the characteristic impedance of the transmission line 54. Fig. 3 (see Division H1) relates to the construction of transistor 50 and diodes 56 on a single chip of silicon. Figs. 6, 7 (not shown), relate to NOR circuits in which the outputs of three circuits of the type shown in Fig. 1 are fed to the input of a fourth circuit.

GB11737/64A
1963-04-01
1964-03-19
Logic circuits which employ transistors

Expired

GB1060542A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US269500A

US3274398A
(en)

1963-04-01
1963-04-01
Logic circuits

Publications (1)

Publication Number
Publication Date

GB1060542A
true

GB1060542A
(en)

1967-03-08

Family
ID=23027525
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB11737/64A
Expired

GB1060542A
(en)

1963-04-01
1964-03-19
Logic circuits which employ transistors

Country Status (2)

Country
Link

US
(1)

US3274398A
(en)

GB
(1)

GB1060542A
(en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3864579A
(en)

1971-06-11
1975-02-04
Mallory & Co Inc P R
Voltage regulating circuit providing plural outputs

JPS555295B2
(en)

1971-09-10
1980-02-05

Family Cites Families (8)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

NL225170A
(en)

1957-02-27

US3106644A
(en)

1958-02-27
1963-10-08
Litton Systems Inc
Logic circuits employing minority carrier storage diodes for adding booster charge to prevent input loading

US3152263A
(en)

1959-04-30
1964-10-06
Gen Electric
Semiconductor logic circuit with voltage dividing base channels

NL274669A
(en)

1961-02-13

US3136897A
(en)

1961-09-25
1964-06-09
Westinghouse Electric Corp
Monolithic semiconductor structure comprising at least one junction transistor and associated diodes to form logic element

US3209214A
(en)

1961-09-25
1965-09-28
Westinghouse Electric Corp
Monolithic universal logic element

US3140405A
(en)

1961-11-13
1964-07-07
Sperry Rand Corp
Digital communications system

US3125675A
(en)

1961-11-21
1964-03-17

jeeves

1963

1963-04-01
US
US269500A
patent/US3274398A/en
not_active
Expired – Lifetime

1964

1964-03-19
GB
GB11737/64A
patent/GB1060542A/en
not_active
Expired

Also Published As

Publication number
Publication date

US3274398A
(en)

1966-09-20

Contact information