GB1065450A - Creation of Inventions and Patents with Artificial Intelligence

GB1065450A – Electro-optical transistor chopper
– Google Patents

GB1065450A – Electro-optical transistor chopper
– Google Patents
Electro-optical transistor chopper

Info

Publication number
GB1065450A

GB1065450A
GB44861/64A
GB4486164A
GB1065450A
GB 1065450 A
GB1065450 A
GB 1065450A
GB 44861/64 A
GB44861/64 A
GB 44861/64A
GB 4486164 A
GB4486164 A
GB 4486164A
GB 1065450 A
GB1065450 A
GB 1065450A
Authority
GB
United Kingdom
Prior art keywords
region
transistor
junction
diode
hemisphere
Prior art date
1963-11-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB44861/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-11-29
Filing date
1964-11-03
Publication date
1967-04-12

1964-11-03
Application filed by Texas Instruments Inc
filed
Critical
Texas Instruments Inc

1967-04-12
Publication of GB1065450A
publication
Critical
patent/GB1065450A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

239000000463
material
Substances

0.000
abstract
2

230000004048
modification
Effects

0.000
abstract
2

238000012986
modification
Methods

0.000
abstract
2

239000000758
substrate
Substances

0.000
abstract
2

229910000530
Gallium indium arsenide
Inorganic materials

0.000
abstract
1

KXNLCSXBJCPWGL-UHFFFAOYSA-N
[Ga].[As].[In]
Chemical compound

[Ga].[As].[In]
KXNLCSXBJCPWGL-UHFFFAOYSA-N
0.000
abstract
1

238000010521
absorption reaction
Methods

0.000
abstract
1

239000004568
cement
Substances

0.000
abstract
1

239000011248
coating agent
Substances

0.000
abstract
1

238000000576
coating method
Methods

0.000
abstract
1

229910052732
germanium
Inorganic materials

0.000
abstract
1

GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound

[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
1

239000011521
glass
Substances

0.000
abstract
1

PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound

[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
1

239000010931
gold
Substances

0.000
abstract
1

229910052737
gold
Inorganic materials

0.000
abstract
1

230000005855
radiation
Effects

0.000
abstract
1

239000004065
semiconductor
Substances

0.000
abstract
1

229910052710
silicon
Inorganic materials

0.000
abstract
1

239000010703
silicon
Substances

0.000
abstract
1

Classifications

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components

H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

G—PHYSICS

G05—CONTROLLING; REGULATING

G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems

G05F1/10—Regulating voltage or current

G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc

G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices

G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources

H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03F—AMPLIFIERS

H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements

H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light

H03F3/085—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light using opto-couplers between stages

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03F—AMPLIFIERS

H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements

H03F3/34—Dc amplifiers in which all stages are dc-coupled

H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking

H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used

H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking

H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used

H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S323/00—Electricity: power supply or regulation systems

Y10S323/902—Optical coupling to semiconductor

Abstract

An electro-optical transistor chopper (see Division G1) comprises a light-emitting semi-conductor diode optically coupled to a transistor or transistors. The diode comprises a hemispherical region of N-type conductivity 92 and a P-type region 94. When forward biased, the rectifying junction 96 between the regions emits light which passes through the antireflection coating 108 and is reflected by the gold mirror 104 on to a transistor having two emitters 84, 86 diffused into a base region 82 which is itself diffused into a collector substrate 80. The transistor and the diode are stuck together by a pliable transparent cement 102. To avoid absorption of radiation in the hemisphere, it is composed of material having a larger band gap than the material in which the junction 96 is located. Ga As0. 6 is preferred for the region in which the junction is located and Ga Asx P1-x, where x \s5 0.5 for the hemisphere. Indium-gallium arsenide may be used. Either the junction is diffused into the hemisphere which is subsequently etched to produce the region 94, or the region 94 is produced epitaxially. The transistor is composed of germanium or silicon. In modifications the double emitter transistor is replaced by two transistors connected in parallel, Fig. 14 (not shown), or with commonly connected collectors and bases, Fig. 9 (not shown). In these embodiments the transistors are formed on a glass substrate. In another modification, Fig. 10 (not shown), the N-type region of the light-emitting diode is of planar form.

GB44861/64A
1963-11-29
1964-11-03
Electro-optical transistor chopper

Expired

GB1065450A
(en)

Applications Claiming Priority (7)

Application Number
Priority Date
Filing Date
Title

US327136A

US3413480A
(en)

1963-11-29
1963-11-29
Electro-optical transistor switching device

US327137A

US3321631A
(en)

1963-11-29
1963-11-29
Electro-optical switch device

US327131A

US3304430A
(en)

1963-11-29
1963-11-29
High frequency electro-optical device using photosensitive and photoemissive diodes

US327140A

US3304431A
(en)

1963-11-29
1963-11-29
Photosensitive transistor chopper using light emissive diode

US327133A

US3315176A
(en)

1963-11-29
1963-11-29
Isolated differential amplifier

US327132A

US3359483A
(en)

1963-11-29
1963-11-29
High voltage regulator

US326765A

US3304429A
(en)

1963-11-29
1963-11-29
Electrical chopper comprising photo-sensitive transistors and light emissive diode

Publications (1)

Publication Number
Publication Date

GB1065450A
true

GB1065450A
(en)

1967-04-12

Family
ID=27569673
Family Applications (3)

Application Number
Title
Priority Date
Filing Date

GB44861/64A
Expired

GB1065450A
(en)

1963-11-29
1964-11-03
Electro-optical transistor chopper

GB45663/64A
Expired

GB1065419A
(en)

1963-11-29
1964-11-09
Isolated differential amplifier

GB46215/64A
Expired

GB1065420A
(en)

1963-11-29
1964-11-12
Electro-optical coupling device

Family Applications After (2)

Application Number
Title
Priority Date
Filing Date

GB45663/64A
Expired

GB1065419A
(en)

1963-11-29
1964-11-09
Isolated differential amplifier

GB46215/64A
Expired

GB1065420A
(en)

1963-11-29
1964-11-12
Electro-optical coupling device

Country Status (4)

Country
Link

US
(7)

US3413480A
(en)

DE
(2)

DE1264513B
(en)

GB
(3)

GB1065450A
(en)

MY
(3)

MY6900270A
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

WO1989000645A1
(en)

1987-07-09
1989-01-26
Robert Bosch Gmbh
High-voltage switch

Families Citing this family (205)

* Cited by examiner, † Cited by third party

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Publication date
Assignee
Title

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1963-04-01
1964-09-03
Siemens Ag

Amplifier device for electromagnetic vibrations

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1963-07-01
1970-09-24
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Method for reducing the control voltage drop in a rectifier arrangement

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1963-12-30
1968-12-17
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Four terminal electro-optical logic device

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1964-02-12
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SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING CONTROLLED INJECTION COMBINATION RADIATION SOURCE.

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1964-02-12
1965-08-13

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1964-04-20
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Circuits utilizing the threshold properties of recombination radiation semiconductor devices

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1972-05-06
1976-03-30
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1972-12-26
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Also Published As

Publication number
Publication date

US3321631A
(en)

1967-05-23

GB1065420A
(en)

1967-04-12

MY6900270A
(en)

1969-12-31

MY6900254A
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1969-12-31

US3413480A
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1968-11-26

US3359483A
(en)

1967-12-19

US3315176A
(en)

1967-04-18

US3304429A
(en)

1967-02-14

DE1264513C2
(en)

1973-01-25

MY6900262A
(en)

1969-12-31

DE1264513B
(en)

1968-03-28

GB1065419A
(en)

1967-04-12

US3304430A
(en)

1967-02-14

US3304431A
(en)

1967-02-14

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